MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3401CI-MS


20V 3A 90mΩ@4.5V,2.8A 350mW 1V@250uA 55pF@10V P Channel 405pF@10V 5.5nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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MSKSEMI 109687
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AUD 0.0183
Multiples of: 20

                   
DMP21D0UFD-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K
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Diodes Incorporated 84390
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AUD 0.15
Multiples of: 3000

1.14 A20 V1.3 OhmsP - Channel 1.2 V- 55 C+ 150 C930 mWSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel8 V1.5 nCEnhancement  
FS3401M A19T


30V 4.1A 42mΩ@10V,4.2A 1400mW 2V@250uA P Channel 954pF@15V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 84002
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AUD 0.0191
Multiples of: 20

                   
BUK9Y113-100E,115


MOSFET N-channel 100 V 113 mo FET
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Nexperia 83942
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AUD 0.3253
Multiples of: 1

12 A100 V97 mOhmsN - Channel 1.7 V- 55 C+ 175 C45 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V8.4 nCEnhancement  
IAUCN04S7L019ATMA1


MOSFETs N
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Infineon 77925
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AUD 0.6804
Multiples of: 1

144 A40 V1.92 mOhmsN - Channel 1.5 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V29 nCEnhancement  
CRSS052N08N


MOSFET N Trench 85V 120A (Tc) 4V @ 250uA 5.2 mΩ @ 50A,10V TO-263 RoHS
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CRMICRO 65281
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AUD 0.3921
Multiples of: 1

                   
CJ2309A


60V 2A 130mΩ@10V 2.5V P Channel SOT-23 MOSFETs ROHS
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Changjing Electronics Technology 55532
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AUD 0.0594
Multiples of: 10

                   
CRSS042N10N


MOSFET N Trench 100V 120A (Tc) 4V @ 250uA 4.2 mΩ @ 50A,10V T0-263 RoHS
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CRMICRO 48096
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AUD 0.6796
Multiples of: 1

                   
BSS123-7-F


100V 170mA 300mW 6O@10V,170mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 17460
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AUD 0.0368
Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
ZXMP6A13FQTA


Diodes Incorporated MOSFET 60V P-Ch Enh Fet 20Vgs 625pD 219pF
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Diodes Incorporated 402
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AUD 0.3383
Multiples of: 5

- 1.1 A- 60 V400 mOhmsP - channel - 3 V- 55 C+ 150 C806 mWSmd/smtSOT23Reel-1 Channel+/- 20 V2.9 nCEnhancementAec - Q101 
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