MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STL76DN4LF7AG


MOSFET Automotive-grade dual N-channel 40 V 8 mOhm typ.15 A STripFET F7 Power MOSFET in PowerFLAT 5x6 double island package
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STMicroelectronics 93120
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AUD 1.1127
Multiples of: 3000

40 A40 V6 mOhmsN - Channel 1.5 V- 55 C+ 175 C71 WSmd/SmtPowerflat5x6 - 4  2 Channel20 V17 nCEnhancement  
RZR020P01TL


ROHM Semiconductor MOSFET 1.5V DRVE PCH MOSFET
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ROHM 92942
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AUD 0.2935
Multiples of: 1

2 A- 12 V75 mOhmsP - Channel10 V - 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel10 V6.5 nCEnhancement  
DMN6040SFDE-7


Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K
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Diodes Incorporated 92887
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AUD 0.3201
Multiples of: 1

5.3 A60 V47 mOhmsN - Channel     Smd/SmtU - DFN2020 - 6Reel       
DMP3099LQ-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 92875
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AUD 0.0772
Multiples of: 1

3.8 A30 V65 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V11 nCEnhancementAec - Q101 
SI2309


MOSFET P Trench 60V 2A 2.5V @ 250uA 300 mΩ @ 1A,4.5V SOT-23 RoHS
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Bourne 92596
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AUD 0.0589
Multiples of: 10

                   
BSS84AKW,115


P-Channel 50 V 150mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323
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Nexperia 92519
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AUD 0.0476
Multiples of: 1

   P - Channel     Smdsmt Reel       
BSC027N04LSGATMA1


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 92150
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AUD 0.5317
Multiples of: 5000

         Smd/SmtTDSON - 8Reel      Optimos
IPD90N04S404ATMA1


Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 90A; 71W
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Infineon 92150
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AUD 0.706
Multiples of: 2500

            Optimos T2      
SQ2303ES-T1_BE3


MOSFET P-CHANNEL 30V D-S
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Vishay 91331
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AUD 0.2665
Multiples of: 1

2.5 A30 V170 mOhmsP - Channel 2.5 V- 55 C+ 175 C1.9 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 10 V , + 10 V4.5 nCEnhancement TrenchFET
DN3525N8-G


Transistor: N-MOSFET; unipolar; 250V; 0.3A; 1.6W; SOT89-3
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Microchip 90738
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AUD 1.0458
Multiples of: 1

360 mA250 V6 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Depletion  
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