MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2315BDS-T1-E3


MOSFET 1.8V 3.2A 1.25W
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Vishay 93134
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AUD 0.5201
Multiples of: 1

3 A12 V50 mOhmsP - Channel 450 mV- 55 C+ 150 C0.75 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V8 nCEnhancement Trenchfet
IRLML6246TRPBF


MOSFET N Trench 20V 4.1A 1.1V @ 5uA 46 mΩ @ 4.1A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 93120
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AUD 0.1054
Multiples of: 3000

4.1 A20 V46 mOhmsN - Channel    1.3 WSmd/SmtSOT - 23ReelSi1 Channel12 V3.5 nC   
NX3008CBKS,115


NXP Semiconductors MOSFET 3030V, 350200 MA NP-CH TRENCH MOSFET
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Nexperia 93120
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AUD 0.1143
Multiples of: 3000

350 mA , - 200 mA30 V1.4 OhmsN - Channel, P - Channel - 0.9 v , 0.9 V- 55 C+ 150 C990 mWSmd/SmtSC - 88 - 6ReelSi2 Channel 0.52 nCEnhancement  
STR2P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 93120
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AUD 0.1777
Multiples of: 3000

2 A30 V56 mOhmsP - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V6 nCEnhancement Stripfet
NTLGD3502NT2G


Trans MOSFET N-CH 20V 4.3A 6-Pin DFN T/R
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ON Semiconductor 93120
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AUD 0.7402
Multiples of: 1

4.3 A20 V60 mOhmsn - channel  - 55 C+ 150 C1.74 Wsmd/smtDFN - 6Cut Tapesi2 channel20 V enhancement  
STL76DN4LF7AG


MOSFET Automotive-grade dual N-channel 40 V 8 mOhm typ.15 A STripFET F7 Power MOSFET in PowerFLAT 5x6 double island package
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STMicroelectronics 93120
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AUD 1.1332
Multiples of: 3000

40 A40 V6 mOhmsN - Channel 1.5 V- 55 C+ 175 C71 WSmd/SmtPowerflat5x6 - 4  2 Channel20 V17 nCEnhancement  
RZR020P01TL


ROHM Semiconductor MOSFET 1.5V DRVE PCH MOSFET
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ROHM 92942
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AUD 0.2935
Multiples of: 1

2 A- 12 V75 mOhmsP - Channel10 V - 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel10 V6.5 nCEnhancement  
2SK3541T2L


30V 100mA 8O@4V,10mA 150mW N Channel SOT-723 MOSFETs ROHS
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ROHM 92926
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AUD 0.037
Multiples of: 10

100 mA30 V8 OhmsN - Channel 800 mV- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel4 V Enhancement  
AO3401


New Quadratic Unclassified Data SOT-23 RoHS
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Microdiode Electronics 92266
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AUD 0.0397
Multiples of: 20

                   
FDS6690A


Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
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ON Semiconductor 92150
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AUD 0.4105
Multiples of: 2500

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