MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB6N80K5


STMicroelectronics MOSFET
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STMicroelectronics 87300
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AUD 1.4755
Multiples of: 1000

4.5 A800 V1.6 OhmsN - Channel+/- 30 V4 V- 55 C+ 150 C110 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel30 V7.5 nCEnhancement Mdmesh
BSS83P H6327


Infineon Technologies MOSFET P-Ch SOT-23-3
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Infineon 87246
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AUD 0.0856
Multiples of: 5

330 mA60 V3 OhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3-Si1 Channel- 4.5 V2.38 nCEnhancementAec - Q101 
SI2302CDS-T1-GE3


N-Channel 20 V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 87193
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AUD 0.0989
Multiples of: 5

2.9 A20 V57 mOhmsN - Channel 400 mV- 55 C+ 150 C860 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V5.5 nCEnhancement Trenchfet
BSS84AKW.115


Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SOT323
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Nexperia 87178
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AUD 0.14
Multiples of: 1

                   
BSS138


SOT-23 MOSFETs ROHS
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ALJ 87154
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AUD 0.0203
Multiples of: 50

                   
DMG1012T


20V 800mA 180mΩ@4.5V,550mA 280mW 750mV@250uA 15pF@16V N Channel 120pF@16V +150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 86543
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AUD 0.0309
Multiples of: 20

                   
AO3400


30V 6A 19m@10V,6.0A 1.4W 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 86116
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AUD 0.028
Multiples of: 20

                   
HL2310A


60V 3A 1.2W 105m@10V,3.0A 2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 85427
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AUD 0.0438
Multiples of: 10

                   
HL3401


30V 4.4A 1.2W 55m@10V,4.4A 900mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 85049
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AUD 0.0351
Multiples of: 10

                   
SI2300A


MOSFET N Trench 20V 6A 1V @ 50uA 25 mΩ @ 6A,4.5V SOT-23 RoHS
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Youtai 81771
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AUD 0.0231
Multiples of: 20

                   
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