MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJ2306


MOSFET N Trench 30V 3.16A 3V @ 250uA 47 mΩ @ 3.5A,10V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Changjing Electronics Technology 84632
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AUD 0.0379
Multiples of: 10

                   
BUK9Y113-100E,115


MOSFET N-channel 100 V 113 mo FET
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Nexperia 83790
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AUD 0.3497
Multiples of: 1

12 A100 V97 mOhmsN - Channel 1.7 V- 55 C+ 175 C45 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V8.4 nCEnhancement  
BR2N7002K2


MOSFET N Trench 60V 300mA 2.5V @ 250uA 2.3 Ω @ 500mA,10V SOT-23 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Blue Rocket 82789
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AUD 0.0127
Multiples of: 50

                   
CMLDM7585 TR


N-Channel and P-Channel Enhancement Mode Complementary MOSFET 20V 650mA 6-Pin SOT-563 T/R
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Central Semiconductor 82599
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AUD 0.3249
Multiples of: 1

         Smd/SmtSOT - 563Cut TapeSi      
STD30NF06T4


STMicroelectronics MOSFET N-channel 60 V
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STMicroelectronics 82450
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AUD 0.5409
Multiples of: 2500

28 A60 V20 mOhmsn - channel20 V - 55 C+ 175 C70 Wsmd/smtDPAK - 3Reel    enhancement  
SK2301AA


MOSFET P Trench 16V 3A 1.5V @ 250uA 160 mΩ @ 3A,4.5V SOT-23 (SOT-23-3) RoHS
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Shikues 80451
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AUD 0.0278
Multiples of: 20

                   
BSS138


SOT-23 MOSFETs ROHS
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JSMSEMI 80316
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AUD 0.0141
Multiples of: 50

                   
RHP020N06T100


N-Channel 60 V 2A (Ta) 500mW (Ta) Surface Mount MPT3
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ROHM 7633
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AUD 0.4466
Multiples of: 1

2 A60 V200 mOhmsN - Channel 1 V + 150 C2 WThrough HoleMPT3ReelSi1 Channel10 V7 nCEnhancement  
SI3483CDV-T1-GE3


MOSFET -30V Vds 20V Vgs TSOP-6
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Vishay 5820
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AUD 0.3166
Multiples of: 3000

8 A30 V34 mOhmsP - Channel 1 V- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6Cut TapeSi1 Channel10 V22 nCEnhancement Trenchfet
AOD4185


MOSFET P Trench 40V 40A (Tc) 3V @ 250uA 15 mΩ @ 20A,10V TO-252-3 RoHS
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Alpha & Omega 1893
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AUD 0.6143
Multiples of: 1

50 A  P    2.5 WSurface Mount      Enhancement  
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