MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138W


MOSFET 50V N-CH Logic Level
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ON Semiconductor 90210
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AUD 0.0828
Multiples of: 3000

   N - Channel     Smdsmt Reel       
ZXM61P02FTA


MOSFET 20V P-Chnl HDMOS
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Diodes Incorporated 90210
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AUD 0.1586
Multiples of: 3000

920 mA20 V600 mOhmsP - Channel 700 mV- 55 C+ 150 C806 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V3.5 nCEnhancement  
DMN3300U-7


Diodes Incorporated MOSFET 600mW 30Vdss
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Diodes Incorporated 90210
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AUD 0.214
Multiples of: 3000

2 A30 V150 mOhmsN - Channel  - 55 C+ 150 C600 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
NTS2101PT1G


MOSFET -8V -1.4A P-Channel
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ON Semiconductor 90132
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AUD 0.0693
Multiples of: 10

1.4 A8 V100 mOhmsP - Channel 450 mV- 55 C+ 150 C290 mWSmd/SmtSOT - 323ReelSi1 Channel4.5 V6.4 nCEnhancement  
BLM3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 55 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Belling 90051
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AUD 0.0576
Multiples of: 10

                   
SL2301S


MOSFET P Channel 20V 2.4A 1.5V @ 250uA 140mO @ 2.4A,4.5V SOT-23 RoHS
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SLKORMICRO 89626
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AUD 0.0123
Multiples of: 50

                   
SIR826LDP-T1-RE3


MOSFET 80V N-CHANNEL D-S
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Vishay 89493
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AUD 1.0333
Multiples of: 1

86 A80 V4.15 mOhmsN - Channel 2.4 V- 55 C+ 150 C83 WSMD/SMTPOWERPAK - SO - 8Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V60.5 nCEnhancement TrenchFET
BSS84LT1G


MOSFET 50V 130mA P-Channel
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ON Semiconductor 87833
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AUD 0.0439
Multiples of: 10

130 mA50 V10 OhmsP - Channel  - 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V2.2 nCEnhancement  
SSM3K15AFS,LF(T


Transistor: N-MOSFET; unipolar; 30V; 100mA; 100mW; SC75
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Toshiba 87499
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AUD 0.0718
Multiples of: 1

                   
IRFL4310TRPBF


MOSFET N Trench 100V 1.6A 4V @ 250uA 200 mΩ @ 1.6A,10V SOT-223 RoHS
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Infineon 84875
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AUD 0.289
Multiples of: 2500

1.6 A100 V200 mOhmsN - Channel    2.1 WSmd/SmtSOT - 223ReelSi1 Channel20 V17 nC   
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