MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002WT1G


MOSFET SMALL SIGNAL MOSFET 6.8V LO C
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 110580
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AUD 0.0364
Multiples of: 3000

310 mA60 V1.6 OhmsN - Channel  - 55 C+ 150 C280 mWSmd/SmtSC - 70 - 3Cut TapeSi1 Channel20 V Enhancement  
SQ2303ES-T1_BE3


MOSFET P-CHANNEL 30V D-S
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Vishay 91331
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AUD 0.2665
Multiples of: 1

2.5 A30 V170 mOhmsP - Channel 2.5 V- 55 C+ 175 C1.9 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 10 V , + 10 V4.5 nCEnhancement TrenchFET
NTLUS3C18PZTAG


Trans MOSFET P-CH 12V 7A 6-Pin UDFN EP
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ON Semiconductor 91236
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AUD 0.7119
Multiples of: 1

7 A12 V24 mOhmsP - Channel 1 V- 55 C+ 150 C1.71 WSmd/SmtUDFN - 6Cut TapeSi1 Channel8 V15.8 nCEnhancement  
SSM3K15AFS,LF(T


Transistor: N-MOSFET; unipolar; 30V; 100mA; 100mW; SC75
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Toshiba 91018
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AUD 0.0659
Multiples of: 1

                   
2N7002DW


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 90210
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AUD 0.1263
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSC - 70 - 6ReelSi2 Channel20 V Enhancement  
YJL3401A


Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.2W
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Yangjie 90035
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AUD 0.0621
Multiples of: 10

            Trench Power Lv      
SBSS84LT1G


P-Channel 50 V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 89971
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AUD 0.0952
Multiples of: 1

130 mA- 50 V10 Ohmsp - channel20 V - 55 C+ 150 C225 mWsmd/smtSOT - 23 - 3Reelsi1 channel20 V2.2 nC aec - q101 
STD5N20LT4


N-Channel 200 V 5A (Tc) 33W (Tc) Surface Mount DPAK
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STMicroelectronics 89157
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AUD 0.3836
Multiples of: 1

5 A200 V700 mOhmsN - Channel 1 V- 55 C+ 150 C33 WSmd/SmtTO - 252ReelSi1 Channel5 V5 nCEnhancement Stripfet
CJ2302 S2


MOSFET N Trench 20V 2.1A 1.2V @ 50uA 60 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 88153
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AUD 0.026
Multiples of: 20

                   
3400


30V 5.8A 25mΩ 1.3V N Channel SOT23 MOSFETs ROHS
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HL 82886
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AUD 0.0193
Multiples of: 50

                   
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