MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SL2301S


MOSFET P Channel 20V 2.4A 1.5V @ 250uA 140mO @ 2.4A,4.5V SOT-23 RoHS
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SLKORMICRO 89626
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AUD 0.0123
Multiples of: 50

                   
SIR826LDP-T1-RE3


MOSFET 80V N-CHANNEL D-S
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Vishay 89493
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AUD 1.0333
Multiples of: 1

86 A80 V4.15 mOhmsN - Channel 2.4 V- 55 C+ 150 C83 WSMD/SMTPOWERPAK - SO - 8Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V60.5 nCEnhancement TrenchFET
AO3407


MOSFET SOT23 RoHS
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TWGMC 89113
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AUD 0.0371
Multiples of: 10

                   
2N7002T


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-523 MOSFETs ROHS
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ElecSuper 88658
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AUD 0.0227
Multiples of: 20

                   
AO3400A


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 32 mΩ @ 5.8A,10V SOT-23 RoHS
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Bourne 87852
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AUD 0.0463
Multiples of: 10

                   
SQ2315ES-T1_GE3


MOSFET P-Channel 12V AEC-Q101 Qualified
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Vishay 87300
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AUD 0.226
Multiples of: 3000

- 5 A- 12 V90 mOhmsP - Channel 450 mV- 55 C+ 175 C2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V9 nCEnhancementAec - Q101Trenchfet
SQ2315ES-T1-GE3


MOSFET, P CH, W/D, 12V, 5A, SOT23
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Vishay 87300
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AUD 0.226
Multiples of: 3000

   P Channel               
DMP2047UCB4-7


Diodes Incorporated MOSFET P-Ch ENH Mode FET -20V -6
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Diodes Incorporated 87300
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AUD 0.3532
Multiples of: 3000

- 4.1 A- 20 V40 mOhmsP - Channel - 800 mV- 55 C+ 150 C1.66 WSmd/SmtU - WLB1010 - 4Reel- - 6 V2.3 nCEnhancement  
PMGD290XN,115


Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP
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Nexperia 43953
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AUD 0.1362
Multiples of: 1

860 mA20 V350 mOhmsN - Channel 500 mV- 55 C+ 150 C0.41 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.72 nCEnhancement  
2N7002KW


MOSFET NCHAN Enhance MOSFET
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ON Semiconductor 14550
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AUD 0.1063
Multiples of: 3000

310 mA60 V3 OhmsN - Channel    300 mWSmd/SmtSOT - 323ReelSi1 Channel  Enhancement  
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