MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002LT1G


MOSFET 60V 115mA N-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 613253
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AUD 0.0268
Multiples of: 20

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
SI2309


MOSFET P Trench 60V 2A 2.5V @ 250uA 300 mΩ @ 1A,4.5V SOT-23 RoHS
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Bourne 92470
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AUD 0.0542
Multiples of: 10

                   
SQ9407EY-T1_BE3


MOSFET P-CHANNEL 60 V
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Vishay 76314
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AUD 0.8962
Multiples of: 1

           Cut Tape       
SI3430DV-T1-BE3


N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
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Vishay 75564
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AUD 1.0442
Multiples of: 1

          SOT - 23 - 6 TH in , TSOT - 23 - 6Tape And ReelMosfet (Metal Oxide)      
SPD08P06PGBTMA1


Infineon Technologies MOSFET P-Ch -60V -8.8A DPAK-2
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Infineon 75455
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AUD 0.4164
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8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V- 13 nCEnhancementAec - Q101 
SI2302DDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 75290
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AUD 0.2346
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2.9 A20 V57 mOhmsN - Channel 850 mV- 55 C+ 150 C860 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.5 nCEnhancement  
BSZ440N10NS3 G


MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3
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Infineon 74369
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AUD 0.4227
Multiples of: 1

18 A100 V38 mOhmsN - Channel 2 V- 55 C+ 150 C29 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V9.1 nCEnhancement Optimos
SI2309CDS-T1-GE3


MOSFET -60V Vds 20V Vgs SOT-23
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Vishay 72716
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AUD 0.1378
Multiples of: 5

1.6 A60 V345 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement Trenchfet
AO3400


30V 6A 19m@10V,6.0A 1.4W 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 68676
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AUD 0.0284
Multiples of: 20

                   
2N7002DWQ-7-F


Diodes Incorporated MOSFET 60V Dual N-Ch Enh 7.5Ohm 5V Vgs 0.23A
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Diodes Incorporated 40740
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AUD 0.078
Multiples of: 3000

230 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C0.4 WSmd/SmtSOT - 363 - 6ReelSi2 Channel5 V EnhancementAec - Q101 
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