MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML0060TRPBF


MOSFET N Trench 60V 2.7A 2.5V @ 25uA 92 mΩ @ 2.7A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 360840
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AUD 0.1772
Multiples of: 3000

            Hexfet®      
CJ3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 65 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 230976
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AUD 0.0417
Multiples of: 20

                   
BSS138PS,115


Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
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Nexperia 112364
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AUD 0.0496
Multiples of: 10

320 mA60 V1.6 OhmsN - Channel 900 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel10 V0.8 nCEnhancement  
IRF8714TRPBF


Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
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Infineon 81480
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AUD 0.3284
Multiples of: 4000

14 A30 V13 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V8.1 nC   
SI2302CDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 81088
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AUD 0.2003
Multiples of: 1

2.9 A20 V57 mOhmsN - Channel 850 mV- 55 C+ 150 C860 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.5 nCEnhancement  
Hot 2SK1317-E


MOSFET MOSFET - Pb Free
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Renesas 80712
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AUD 18.6507
Multiples of: 1

         Through HoleTO - 3P - 3TubeSi      
SI1308EDL-T1-BE3


N-Channel 30V 1.5A (Ta), 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SC-70-3
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Vishay 80621
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AUD 0.1698
Multiples of: 1

          SC - 70 , SOT - 323Digi - Reel®Mosfet (Metal Oxide)      
FDY2000PZ


Transistor: P-MOSFET x2; unipolar; -20V; -0.35A; 0.625W; SOT563
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ON Semiconductor 80067
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AUD 0.2888
Multiples of: 1

            powertrench®      
NVA4001NT1G


ON Semiconductor MOSFET
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ON Semiconductor 79782
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AUD 0.0475
Multiples of: 1

238 mA20 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C300 mWSmd/SmtSC - 75 - 3ReelSi1 Channel10 V  Aec - Q101 
L2N7002KLT1G


MOSFET N Trench 60V 320mA 2.5V @ 250uA 2.3 O @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Leshan 74447
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AUD 0.0199
Multiples of: 50

                   
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