MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC100N06LS3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 41A; 50W; PG-TDSON-8
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Infineon 92150
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AUD 0.6518
Multiples of: 5000

            Optimos 3      
NDS332P


MOSFET SOT-23 P-CH LOGIC
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ON Semiconductor 72750
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AUD 0.141
Multiples of: 3000

- 1 A- 20 V350 mOhmsP - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSSOT - 3Cut TapeSi1 Channel8 V Enhancement  
SCH1337-TL-W


MOSFET PCH 4V Power MOSFET
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ON Semiconductor 72750
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AUD 0.1829
Multiples of: 1

- 2 A- 30 V292 mOhmsP - Channel - 2.6 V- 55 C+ 150 C800 mWSmd/SmtSOT - 563 - 6ReelSi1 Channel+/- 20 V3.9 nCEnhancement  
MCH3322-TL-E


GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor 72750
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AUD 0.1829
Multiples of: 1

                   
PMV33UPE,215


NXP Semiconductors MOSFET 20V P-Channel Trench Mosfet
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Nexperia 72750
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AUD 0.4091
Multiples of: 1

- 5.3 A- 20 V30 mOhmsP - Channel - 950 mV- 55 C+ 150 C980 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V14.7 nCEnhancement  
IRL2203NPBF


MOSFET N Trench 30V 116A 1V @ 250uA 7 mΩ @ 60A,10V TO-220 (TO-220-3) RoHS
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Infineon 72750
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AUD 0.9984
Multiples of: 1

            Hexfet®      
MCH3475-TL-E


N-Channel 30 V 1.8A (Ta) 800mW (Ta) Surface Mount SC-70FL/MCPH3
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ON Semiconductor 72750
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AUD 33.3929
Multiples of: 1

1.8 A30 V180 mOhmsn - channel  - 55 C+ 150 C800 mWsmd/smtSOT - 323 - 3Reelsi1 channel20 V2 nC   
BSC110N06NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 72313
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AUD 0.5484
Multiples of: 1

50 A60 V9 mOhmsN - Channel 2 V- 55 C+ 150 C50 WSmd/SmtTDSONReelSi1 Channel20 V33 nCEnhancement Optimos
SI2301CDS-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 70975
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AUD 0.1933
Multiples of: 1

3.1 A20 V112 mOhmsP - Channel 1 V- 55 C+ 150 C1.6 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.3 nCEnhancement  
RK7002BMT116


N-Channel 60 V 250mA (Ta) 200mW (Ta) Surface Mount SST3
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ROHM 70072
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AUD 0.0216
Multiples of: 20

250 mA60 V2.4 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
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