MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP9926


MOSFET 2 N Channel (Dual) 20V 6.5A 1.5V @ 250uA 24 mΩ @ 6.5A,4.5V SOP-8 RoHS
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Quan Li 79782
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AUD 0.1192
Multiples of: 10

                   
FSS2305 A5SHB


SOT-23-3L MOSFETs ROHS
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FOSAN 79466
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AUD 0.0322
Multiples of: 20

                   
SPD08P06PGBTMA1


Infineon Technologies MOSFET P-Ch -60V -8.8A DPAK-2
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Infineon 79112
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AUD 0.4236
Multiples of: 1

8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V- 13 nCEnhancementAec - Q101 
BSS139 H6327


Infineon Technologies MOSFET N-Ch 250V 30mA SOT-23-3
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Infineon 78802
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AUD 0.2038
Multiples of: 1

100 mA250 V14 OhmsN - Channel 2.1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3-Si1 Channel10 V2.3 nCDepletionAec - Q101 
BSS123-7-F


100V 170mA 300mW 6O@10V,170mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 78570
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AUD 0.0312
Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
FDN336P


Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3
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ON Semiconductor 78570
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AUD 0.1772
Multiples of: 3000

            Powertrench®      
SI1480DH-T1-BE3


N-Channel 100V 2.1A (Ta), 2.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 78570
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AUD 0.2442
Multiples of: 1

2.6 A100 V200 mOhmsN - Channel 3 V- 55 C+ 150 C2.8 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V5 nCEnhancement TrenchFET
SI2302S


20V 2.5A 1PCSNChannel SOT-23 MOSFETs ROHS
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FOSAN 78537
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AUD 0.0089
Multiples of: 50

                   
NDS331N


mosfet n trench 20v 1.3a 1v @ 250ua 160 m @ 1.5a,4.5v ssot-3 rohs
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ON Semiconductor 78434
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AUD 0.169
Multiples of: 1

   N Channel               
AO3400


30V 6A 19m@10V,6.0A 1.4W 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 21165
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AUD 0.0266
Multiples of: 20

                   
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