MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot SI7117DN-T1-E3


MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V
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Vishay 78313
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AUD 0.8084
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
CMLDM7484 TR


MOSFET N AND P CHANNEL MOSFET
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Central Semiconductor 78279
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AUD 0.2789
Multiples of: 3000

450 mA30 V460 mOhms , 1.1 OhmsN And P - Channel 500 mV , 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 563ReelSi2 Channel8 V792 pC , 880 pCEnhancement  
BSS138


null 500mA 0.9O@10V null SOT-23 MOSFETs ROHS
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Microdiode Electronics 78191
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AUD 0.0129
Multiples of: 30

                   
ZXMS6005DN8Q-13


MOSFET Low Side IntelliFET
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Diodes Incorporated 78083
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AUD 0.901
Multiples of: 1

1.2 A60 V350 mOhms , 350 mOhmsN - Channel 700 mV- 40 C+ 125 C1.56 WSmd/SmtSO - 8Cut TapeSi2 Channel5 V-EnhancementAec - Q101 
BSS84


null 130mA 225mW 4.5@4.5V,0.15A 800mV@250uA SOT-23 MOSFETs ROHS
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Siliup 77503
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AUD 0.0126
Multiples of: 50

                   
BSS138


MOSFET N Trench 50V 220mA 1.5V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 77309
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AUD 0.0184
Multiples of: 20

                   
BSP318SH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 2.6A; 1.8W; SOT223
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Infineon 76970
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AUD 1.1332
Multiples of: 1

            Sipmos      
CJ2305


MOSFET P Trench 12V 4.1A 900mV @ 250uA 45 mΩ @ 3.5A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 76565
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AUD 0.0449
Multiples of: 10

                   
AO3401


30V 4.4A 1PCSPChannel SOT-23 MOSFETs ROHS
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FOSAN 76009
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AUD 0.0251
Multiples of: 20

                   
BSZ440N10NS3 G


MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3
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Infineon 161
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AUD 0.4296
Multiples of: 1

18 A100 V38 mOhmsN - Channel 2 V- 55 C+ 150 C29 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V9.1 nCEnhancement Optimos
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