MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSH203,215


P-Channel 30 V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB
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Nexperia 78311
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AUD 0.1428
Multiples of: 1

470 mA30 V900 mOhmsP - Channel 400 mV- 55 C+ 150 C417 mWSmd/SmtSOT - 23ReelSi1 Channel- 4.5 V2.2 nCEnhancement  
CMLDM7484 TR


MOSFET N AND P CHANNEL MOSFET
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Central Semiconductor 78279
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AUD 0.2789
Multiples of: 3000

450 mA30 V460 mOhms , 1.1 OhmsN And P - Channel 500 mV , 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 563ReelSi2 Channel8 V792 pC , 880 pCEnhancement  
2N7002KT7G


MOSFET NFET SOT23 60V 115MA 7MO
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ON Semiconductor 78085
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AUD 0.0347
Multiples of: 3500

300 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
ZXMS6005DN8Q-13


MOSFET Low Side IntelliFET
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Diodes Incorporated 78083
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AUD 0.7734
Multiples of: 1

1.2 A60 V350 mOhms , 350 mOhmsN - Channel 700 mV- 40 C+ 125 C1.56 WSmd/SmtSO - 8Cut TapeSi2 Channel5 V-EnhancementAec - Q101 
BSD223PH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
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Infineon 77904
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AUD 0.0541
Multiples of: 1

            Optimos P      
IRFL014NTRPBF


MOSFET N Trench 55V 1.9A 4V @ 250uA 160 mΩ @ 1.9A,10V SOT-223 RoHS
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Infineon 77600
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AUD 0.2817
Multiples of: 2500

   N Channel      SOT - 223Reel       
IRF9333TRPBF


MOSFET P Trench 30V 9.2A 2.4V @ 25uA 19.4 mΩ @ 9.2A,10V SOIC-8_150mil RoHS
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Infineon 77600
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AUD 0.4951
Multiples of: 1

9.2 A30 V32.5 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi 20 V14 nC   
NTD20P06LT4G


MOSFET -60V -15.5A P-Channel
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ON Semiconductor 77600
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AUD 0.6075
Multiples of: 2500

15.5 A60 V143 mOhmsP - Channel 1 V- 55 C+ 175 C65 WSmd/SmtTO - 252 - 4Cut TapeSi1 Channel5 V15 nCEnhancement  
2SK3018


MOSFET N Trench 30V 100mA 1.5V @ 100uA 8 Ω @ 10mA,4V SOT-323 (SC-70) RoHS
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Changjing Electronics Technology 31059
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AUD 0.0216
Multiples of: 20

                   
BSS138


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 25656
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AUD 0.0115
Multiples of: 50

                   
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