MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMV30UN2R


N-Channel 20 V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 77924
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AUD 0.0831
Multiples of: 5

5.4 A20 V24 mOhmsN - Channel 400 mV- 55 C+ 150 C1 WSmd/SmtTO - 236AB - 3ReelSi1 Channel12 V6.2 nCEnhancement  
IRLML0040TRPBF


Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
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Infineon 77906
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AUD 0.1241
Multiples of: 1

3.6 A40 V78 mOhmsN - Channel 1 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
IRF8714TRPBF


Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
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Infineon 77600
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AUD 0.4375
Multiples of: 4000

14 A30 V13 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V8.1 nC   
BSC027N04LSGATMA1


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 77600
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AUD 0.5625
Multiples of: 5000

         Smd/SmtTDSON - 8Reel      Optimos
IPA60R750E6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 5.7A; 27W; TO220FP
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Infineon 77115
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AUD 1.4809
Multiples of: 1

            coolmos e6      
NX7002AK,215


N-Channel 60 V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
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Nexperia 77095
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AUD 0.0189
Multiples of: 20

190 mA60 V3 OhmsN - Channel 1.6 V- 55 C+ 150 C1.33 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V0.33 nCEnhancement  
STD5N20LT4


N-Channel 200 V 5A (Tc) 33W (Tc) Surface Mount DPAK
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STMicroelectronics 76849
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AUD 0.3699
Multiples of: 1

5 A200 V700 mOhmsN - Channel 1 V- 55 C+ 150 C33 WSmd/SmtTO - 252ReelSi1 Channel5 V5 nCEnhancement Stripfet
SQ9407EY-T1_BE3


MOSFET P-CHANNEL 60 V
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Vishay 76314
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AUD 0.8962
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           Cut Tape       
SI2302


MOSFET N Trench 20V 3A 1.5V @ 250uA 45 mΩ @ 3A,4.5V SOT-23 RoHS
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Bourne 76164
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AUD 0.0247
Multiples of: 20

                   
BSS138P.215


Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23
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Nexperia 75957
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AUD 0.096
Multiples of: 1

                   
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