MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ9407EY-T1_BE3


MOSFET P-CHANNEL 60 V
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Vishay 76314
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AUD 0.8962
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           Cut Tape       
DMTH6016LFDFWQ-7R


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 76110
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AUD 0.4535
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9.4 A60 V18 mOhmsN - Channel 1 V- 55 C+ 175 C2.3 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel20 V15.3 nCEnhancementAec - Q101 
SIA483ADJ-T1-GE3


MOSFET P-Channel 30 V D-S MOSFET
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Vishay 75925
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AUD 0.2056
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12 A30 V16 mOhmsP - Channel 5 V- 55 C+ 150 C17.9 WSmd/SmtPOWERPAK SC - 70Cut TapeSi1 Channel- 20 v , 16 V17 nCEnhancement Trenchfet
DMG2302UK-7-ES


20V 3.5A 350mW 36m@10V,3.5A 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 75803
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AUD 0.015
Multiples of: 10

                   
MMBF170


Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
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ON Semiconductor 75660
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AUD 0.0556
Multiples of: 3000

   N Channel               
SI3430DV-T1-BE3


N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
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Vishay 75564
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AUD 1.0442
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          SOT - 23 - 6 TH in , TSOT - 23 - 6Tape And ReelMosfet (Metal Oxide)      
SI2302DDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 75290
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AUD 0.2346
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2.9 A20 V57 mOhmsN - Channel 850 mV- 55 C+ 150 C860 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.5 nCEnhancement  
ZXMN2F34FHTA


MOSFET 20V N-Channel Enhance. Mode MOSFET
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Diodes Incorporated 74497
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AUD 0.1729
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4 A20 V60 mOhmsN - Channel 500 mV- 55 C+ 150 C950 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V2.8 nCEnhancement  
IRLML2030TRPBF


MOSFET N Trench 30V 2.7A 2.3V @ 25uA 100 mΩ @ 2.7A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 74475
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AUD 0.0943
Multiples of: 1

            Hexfet®      
BSS84-TP


BSS84, P-Channel Enhancement Mode Field Effect Transistor, SOT-23
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Micro Commercial Components (MCC) 69840
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AUD 0.0225
Multiples of: 3000

                   
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