MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA60R750E6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 5.7A; 27W; TO220FP
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Infineon 77115
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AUD 1.5472
Multiples of: 1

            coolmos e6      
CJ2305


MOSFET P Trench 12V 4.1A 900mV @ 250uA 45 mΩ @ 3.5A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 76565
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AUD 0.0449
Multiples of: 10

                   
SQ9407EY-T1_BE3


MOSFET P-CHANNEL 60 V
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Vishay 76314
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AUD 0.8962
Multiples of: 1

           Cut Tape       
DMTH6016LFDFWQ-7R


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 76110
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AUD 0.4535
Multiples of: 1

9.4 A60 V18 mOhmsN - Channel 1 V- 55 C+ 175 C2.3 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel20 V15.3 nCEnhancementAec - Q101 
DMG2302UK-7-ES


20V 3.5A 350mW 36m@10V,3.5A 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 75803
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AUD 0.015
Multiples of: 10

                   
SI2301CDS-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 75762
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AUD 0.1921
Multiples of: 1

3.1 A20 V112 mOhmsP - Channel 1 V- 55 C+ 150 C1.6 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.3 nCEnhancement  
DMN2004K-7


mosfet n trench 20v 630ma 1v @ 250ua 550 m @ 540ma,4.5v sot-23 (sot-23-3) rohs
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Diodes Incorporated 75660
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AUD 0.0444
Multiples of: 3000

                   
AO3401A


30V 4.2A 60mΩ@10V,4.2A 1.2W 1.3V@250uA 85pF@15V P Channel 1050pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 74767
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AUD 0.0274
Multiples of: 20

                   
NTTFS4C05NTAG


ON Semiconductor MOSFET
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ON Semiconductor 4365
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AUD 0.2965
Multiples of: 1500

75 A30 V3.6 mOhmsN - Channel     Smd/SmtWDFN - 8ReelSi      
DMN26D0UDJ-7


Mosfet Array 2 N-Channel (Dual) 20V 240mA 300mW Surface Mount SOT-963
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Diodes Incorporated 106
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AUD 0.1066
Multiples of: 5

240 mA20 V3 OhmsN - Channel 450 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 963ReelSi2 Channel4.5 V Enhancement  
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