MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MCH3322-TL-E


GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor 72750
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AUD 0.2282
Multiples of: 1

                   
SCH1337-TL-W


MOSFET PCH 4V Power MOSFET
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ON Semiconductor 72750
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AUD 0.2282
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- 2 A- 30 V292 mOhmsP - Channel - 2.6 V- 55 C+ 150 C800 mWSmd/SmtSOT - 563 - 6ReelSi1 Channel+/- 20 V3.9 nCEnhancement  
MCH3475-TL-E


N-Channel 30 V 1.8A (Ta) 800mW (Ta) Surface Mount SC-70FL/MCPH3
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ON Semiconductor 72750
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AUD 36.206
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1.8 A30 V180 mOhmsn - channel  - 55 C+ 150 C800 mWsmd/smtSOT - 323 - 3Reelsi1 channel20 V2 nC   
PMV33UPE,215


NXP Semiconductors MOSFET 20V P-Channel Trench Mosfet
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Nexperia 72556
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AUD 0.4274
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- 5.3 A- 20 V30 mOhmsP - Channel - 950 mV- 55 C+ 150 C980 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V14.7 nCEnhancement  
SI8817DB-T2-E1


MOSFET -20V 76mOhm@4.5V 2.9A P-Ch G-III
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Vishay 72248
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AUD 0.2355
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   P - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT 0.8 x 0.8Reel      P - Channel Gen Iii
SI4948BEY-T1-E3


MOSFET 60V 3.1A 0.12Ohm
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Vishay 72192
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AUD 0.8307
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3.1 A60 V120 mOhmsP - Channel 1 V- 55 C+ 175 C2.4 WSMD/SMTSOIC - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V22 nCEnhancement TrenchFET
SI2305A


MOSFET P Trench 20V 4.2A 500mV @ 250uA（Min） 65 mΩ @ 4.2A,4.5V SOT-23 RoHS
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Youtai 71372
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AUD 0.0341
Multiples of: 10

                   
Hot IRF5305PBF


MOSFET P Trench 55V 31A 4V @ 250uA 60 mΩ @ 16A,10V TO-220 (TO-220-3) RoHS
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Infineon 8253
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AUD 0.7257
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   P - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
BSD235CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
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Infineon 2910
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AUD 0.136
Multiples of: 3000

            Optimos 2      
2N7002K


MOSFET N Trench 60V 300mA 2.5V @ 250uA 5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Hottech 0
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AUD 0.0165
Multiples of: 50

                   
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