MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP9926


MOSFET 2 N Channel (Dual) 20V 6.5A 1.5V @ 250uA 24 mΩ @ 6.5A,4.5V SOP-8 RoHS
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Quan Li 79782
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AUD 0.1192
Multiples of: 10

                   
FSS2305 A5SHB


SOT-23-3L MOSFETs ROHS
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FOSAN 79466
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AUD 0.0322
Multiples of: 20

                   
BSZ110N06NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 78938
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AUD 0.4802
Multiples of: 1

20 A60 V11 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V Enhancement Optimos
BSS138WH6433XTMA1


Infineon Technologies MOSFET N-Ch 60V 280mA SOT-323-3
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Infineon 78820
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AUD 0.0629
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280 mA60 V3.5 OhmsN - Channel    500 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel 0.1 nC   
BSS139 H6327


Infineon Technologies MOSFET N-Ch 250V 30mA SOT-23-3
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Infineon 78802
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AUD 0.2038
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100 mA250 V14 OhmsN - Channel 2.1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3-Si1 Channel10 V2.3 nCDepletionAec - Q101 
SI1480DH-T1-BE3


N-Channel 100V 2.1A (Ta), 2.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 78570
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AUD 0.2442
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2.6 A100 V200 mOhmsN - Channel 3 V- 55 C+ 150 C2.8 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V5 nCEnhancement TrenchFET
SI2302S


20V 2.5A 1PCSNChannel SOT-23 MOSFETs ROHS
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FOSAN 78537
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AUD 0.0089
Multiples of: 50

                   
RU1C002ZPTCL


MOSFET 4V Drive Pch MOSFET Drive Pch
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ROHM 61340
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AUD 0.0489
Multiples of: 1

200 mA- 20 V9.6 OhmsP - Channel - 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel+/- 10 V1.4 nCEnhancement  
NDC7002N


MOSFET SO-6 N-CH ENHANCE
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ON Semiconductor 3205
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AUD 0.2046
Multiples of: 5

   Dual N Channel      SSOT - 6Reel       
FDZ661PZ


MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET
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ON Semiconductor 44
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AUD 0.2111
Multiples of: 1

2.6 A20 V140 mOhmsP - Channel  - 55 C+ 150 C1.3 WSmd/SmtWLCSPReelSi 8 V   Powertrench
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