MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2319


SOT-23-3 MOSFETs ROHS
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Youtai 114440
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AUD 0.0514
Multiples of: 10

                   
MCH3476-TL-W


MOSFET NCH 1.8V DRIVE SERIE
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ON Semiconductor 72168
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AUD 0.1718
Multiples of: 1

2 A20 V93 mOhmsn - channel 400 mV + 150 C800 mWsmd/smtSOT - 323 - 3Cut Tapesi1 channel12 V1.8 nCenhancement  
CMUDM7005 TR


MOSFET SMD- Small Signal N-Channel Mosfet
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Central Semiconductor 72024
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AUD 0.5462
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650 mA20 V140 mOhmsN - Channel 500 mV- 65 C+ 150 C300 mWSmd/SmtSOT - 523ReelSi1 Channel8 V1.58 nCEnhancement Ultramini
DMN53D0LQ-13


MOSFET 2N7002 Family
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Diodes Incorporated 71780
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AUD 0.0913
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500 mA50 V1.6 OhmsN - Channel 800 mV- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V600 pCEnhancementAec - Q101 
6HP04CH-TL-W


ON Semiconductor MOSFET
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ON Semiconductor 71317
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AUD 0.1595
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- 370 mA- 60 V4.2 Ohmsp - channel     smd/smtSOT - 23 - 3Reelsi1 channel     
RQ3E100BNTB


MOSFET 4.5V Drive Nch MOSFET
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ROHM 70875
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AUD 0.2036
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13.5 A30 V7.7 mOhmsn - channel 1 V- 55 C+ 150 C15 Wsmd/smtH SMT - 8Reelsi1 channel+/- 20 V22 nCenhancement  
HYG090ND06LS1C2


60V 56A 60W 8mΩ@10V,20A 2 N-Channel PDFN-8(5.2x5.9) MOSFETs ROHS
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HuaYi 69130
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AUD 0.4552
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2N7002BKVL


MOSFET 2N7002BK/TO-236AB/REEL 11" Q3/
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Nexperia 68860
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AUD 0.0378
Multiples of: 1

350 mA60 V1 OhmsN - Channel 1.1 V- 55 C+ 150 C440 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V600 pCEnhancement  
IAUCN04S7L019ATMA1


MOSFETs N
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Infineon 55697
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AUD 0.6567
Multiples of: 1

144 A40 V1.92 mOhmsN - Channel 1.5 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V29 nCEnhancement  
SI2328DS-T1-BE3


MOSFETs SOT233 100V 1.15A N-CH MOSFET
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Vishay 0
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AUD 0.5566
Multiples of: 1

1.15 A100 V250 mOhmsN - Channel 4 V- 55 C+ 150 C730 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V3.3 nCEnhancement  
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