MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2011UFDE-7


Diodes Incorporated MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
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Diodes Incorporated 72031
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AUD 0.3597
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11.7 A20 V15 mOhmsN - Channel 1 V- 55 C+ 150 C1.97 WSmd/SmtUDFN2020 - 6ReelSi1 Channel12 V56 nCEnhancement  
CMUDM7005 TR


MOSFET SMD- Small Signal N-Channel Mosfet
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Central Semiconductor 72024
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AUD 0.5462
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650 mA20 V140 mOhmsN - Channel 500 mV- 65 C+ 150 C300 mWSmd/SmtSOT - 523ReelSi1 Channel8 V1.58 nCEnhancement Ultramini
BSS308PEH6327XT


MOSFET OptiMOS P3 Small Signal Transistor
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Infineon 71931
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AUD 0.1844
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2 A30 V62 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V- 5 nCEnhancementAec - Q101 
BSS138IXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 71805
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AUD 0.0629
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230 mA60 V3.5 OhmsN - Channel 1.4 V- 50 C+ 150 C360 mWSMD/SMT Cut Tape , ReelSi1 Channel- 20 V , + 20 V1 nCEnhancement  
DMN53D0LQ-13


MOSFET 2N7002 Family
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Diodes Incorporated 71780
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AUD 0.0913
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500 mA50 V1.6 OhmsN - Channel 800 mV- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V600 pCEnhancementAec - Q101 
SI7322DN-T1-E3


Vishay Semiconductors MOSFET 100V 18A 52W 58mohm 10V
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Vishay 71428
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AUD 1.0546
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5.5 A100 V58 mOhmsN - Channel20 V - 55 C+ 150 C3.8 WSmd/SmtPOWERPAK - 1212 - 8ReelSi   Enhancement Trenchfet
BSZ075N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
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Infineon 71094
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AUD 1.0779
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            Optimos 5      
FDMS7678


MOSFET 30V/20V N-Ch PowerTrench SyncFET
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ON Semiconductor 70924
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AUD 0.5151
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17.5 A30 V5.5 mOhmsN - Channel  - 55 C+ 150 C41 WSmd/SmtPOWER 56ReelSi1 Channel20 V   Powertrench
SI2338DS-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 70602
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AUD 0.2602
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6 A30 V28 mOhmsN - Channel 2.5 V- 55 C+ 150 C2.5 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V4.2 nCEnhancement  
BSC052N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 17A; 28W; PG-TDSON-8
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Infineon 4850
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AUD 0.5419
Multiples of: 5000

            Optimos      
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