MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR3411TRPBF


Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
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Infineon 75660
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AUD 0.6602
Multiples of: 2000

32 A100 V44 mOhmsN - Channel 4 V- 55 C+ 175 C130 WSmd/SmtDPAK - 3ReelSi1 Channel20 V71 nC   
SI3430DV-T1-BE3


N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
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Vishay 75564
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AUD 1.0442
Multiples of: 1

          SOT - 23 - 6 TH in , TSOT - 23 - 6Tape And ReelMosfet (Metal Oxide)      
SI2302DDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 75290
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AUD 0.2346
Multiples of: 1

2.9 A20 V57 mOhmsN - Channel 850 mV- 55 C+ 150 C860 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.5 nCEnhancement  
IRLML2502TRPBF


N-Channel 20 V 4.2A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23
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Infineon 74493
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AUD 0.133
Multiples of: 1

   N - Channel     Smd/SmtSOT - 23Reel       
IRLR3114ZTRPBF


International Rectifier MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC
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Infineon 73720
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AUD 0.7183
Multiples of: 2000

130 A40 V5.2 mOhmsN - Channel16 V2.5 V- 55 C+ 175 C140 WSmd/SmtDPAK - 3ReelSi1 Channel16 V40 nCEnhancement  
AP2301


MOSFET P Trench 20V 3A 1V @ 250uA 110 mΩ @ 3A,4.5V SOT-23 RoHS
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Quan Li 73708
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AUD 0.0413
Multiples of: 20

                   
FDC6304P


MOSFET SSOT-6 P-CH -25V
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ON Semiconductor 73422
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AUD 0.5188
Multiples of: 1

460 mA25 V1.5 Ohmsp - channel  - 55 C+ 150 C900 mWsmd/smtSSOT - 6Reelsi2 channel- 8 V enhancement  
DMP1046UFDB-13


Diodes Incorporated MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC
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Diodes Incorporated 73219
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AUD 0.1868
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3.8 A12 V37 mOhms , 37 mOhmsP - Channel 1 V- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - B - 6ReelSi2 Channel8 V17.9 nC , 17.9 nCEnhancement  
SI2308BDS-T1-GE3


MOSFET 60V Vds 20V Vgs SOT-23
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Vishay 72790
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AUD 0.3647
Multiples of: 1

2.3 A60 V156 mOhmsN - Channel 1 V- 55 C+ 150 C1.66 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.8 nCEnhancement Trenchfet
AO3400


MOSFET SOT23 RoHS
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TWGMC 72556
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AUD 0.0369
Multiples of: 20

                   
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