MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3415A


MOSFET P Trench 20V 4A 1V @ 250uA 50 mΩ @ 4A,4.5V SOT-23 RoHS
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Youtai 63457
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AUD 0.0325
Multiples of: 20

                   
PJA3461_R1_00001


MOSFET /A61/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-60TMP/NF60T-QI05/PJ///
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Panjit 63005
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AUD 0.182
Multiples of: 1

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TP5322K1-G


Transistor: P-MOSFET; unipolar; -220V; -0.7A; 360mW; SOT23-3
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Microchip 62821
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AUD 0.7019
Multiples of: 1

120 mA220 V12 OhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel- 10 V Enhancement  
BSS84


60V 170mA 8@10V,0.17A 225mW 2V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 62807
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AUD 0.0165
Multiples of: 50

                   
SI2301A


MOSFET P Trench 20V 2.8A 1V @ 250uA 142 mΩ @ 2A,2.5V SOT-23 RoHS
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Youtai 62662
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AUD 0.0147
Multiples of: 50

                   
TN2404K-T1-E3


MOSFET 240V 0.2A 4.0Ohm
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Vishay 61343
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AUD 0.5029
Multiples of: 1

200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.87 nCEnhancement Trenchfet
FDY102PZ


MOSFET -20V Sngle PCh -1.5V Specified PowerTrnch
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ON Semiconductor 59040
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AUD 0.131
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSC - 89 - 3Reel       
DMC2400UV-7


MOSFET 20V N P Ch 20VDSS 0.45W Low RDSon
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Diodes Incorporated 23280
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AUD 0.0802
Multiples of: 3000

1030 mA , 700 mA20 V480 mOhms , 970 mOhmsN - Channel, P - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel5 V0.07 nC , 0.85 nCEnhancement  
Hot PSMN1R5-30YLC,115


N-Channel 30 V 100A (Tc) 179W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 40
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AUD 0.6658
Multiples of: 1

100 A30 V1.55 mOhmsN - Channel 1.51 V- 55 C+ 175 C179 WSmd/SmtLFPAKReelSi1 Channel10 V65 nCEnhancement  
PMV28XPEAR


MOSFET MOS DISCRETES
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Nexperia 0
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AUD 0.1422
Multiples of: 1

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