MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS127H6327XTSA2


Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
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Infineon 61110
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AUD 0.0993
Multiples of: 3000

            Sipmos      
IRLML6346TRPBF


MOSFET N Trench 30V 3.4A 1.1V @ 10uA 63 mΩ @ 3.4A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 61110
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AUD 0.1161
Multiples of: 3000

3.4 A30 V63 mOhmsN - Channel    1.3 WSmd/SmtSOT - 23ReelSi1 Channel12 V2.9 nC   
SPA15N65C3XKSA1


MOSFET LOW POWER_LEGACY
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Infineon 61110
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AUD 4.2188
Multiples of: 1

                   
FDMS0302S


Fairchild Semiconductor MOSFET
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ON Semiconductor 60832
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AUD 0.8357
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29 A30 V1.5 mOhmsN - Channel 1.7 V- 55 C+ 150 C1.5 WSmd/SmtPOWER56 - 8ReelSi1 Channel+/- 20 V78 nCEnhancement Powertrench Syncfet
SI1902DL-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 660mA (Ta) 270mW (Ta) Surface Mount SC-70-6
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Vishay 60721
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AUD 0.261
Multiples of: 1

700 mA20 V385 mOhmsN - Channel 1.5 V- 55 C+ 150 C300 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V1.2 nCEnhancement  
IPP057N08N3GXKSA1


Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO220-3
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Infineon 60625
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AUD 2.1036
Multiples of: 1

            Optimos 3      
SI2301


SOT-23 MOSFETs ROHS
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ALJ 60285
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AUD 0.0172
Multiples of: 50

                   
5N10


100V 5A 1.2W 110mΩ@10V,3.0A 1.8V@250uA null SOT-23 MOSFETs ROHS
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GOODWORK 50760
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AUD 0.0347
Multiples of: 10

                   
ZXM61P02FTA


MOSFET 20V P-Chnl HDMOS
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Diodes Incorporated 49470
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AUD 0.1607
Multiples of: 3000

920 mA20 V600 mOhmsP - Channel 700 mV- 55 C+ 150 C806 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V3.5 nCEnhancement  
NTA4153NT1G


MOSFET 20V 915mA N-Channel
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ON Semiconductor 2043
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AUD 0.0817
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915 mA20 V230 mOhmsN - Channel 450 mV- 55 C+ 150 C300 mWSmd/SmtSC - 75 - 3Cut TapeSi1 Channel4.5 V1.82 nCEnhancement  
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