MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002KT1G


MOSFET NFET SOT23 60V 380mA 2.5Ohms
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ON Semiconductor 175492
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AUD 0.0316
Multiples of: 20

380 mA60 V1.6 OhmsN - Channel 1 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.7 nCEnhancement  
DMT10H015LCG-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 60206
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AUD 0.6462
Multiples of: 1

          V - DFN3333 - 8Cut TapeSi      
SI3590DV-T1-GE3


MOSFET 30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
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Vishay 59994
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AUD 0.5832
Multiples of: 1

   N And P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
SQ4064EY-T1_BE3


MOSFET N-CHANNEL 60V
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Vishay 59867
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AUD 0.7981
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12 A60 V16.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C6.8 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V29 nCEnhancement TrenchFET
SSM6N44FU,LF


MOSFET Sm-signalHiSpeed2n1 US6 SOT-363
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Toshiba 59818
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AUD 0.0781
Multiples of: 1

           Cut Tape       
BSZ075N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
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Infineon 59360
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AUD 1.2839
Multiples of: 1

40 A80 V8.5 mOhmsN - Channel 3 V- 55 C+ 150 C69 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V24 nCEnhancement OptiMOS
2N7002K


SOT-23 MOSFETs ROHS
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TWGMC 58927
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AUD 0.0125
Multiples of: 50

                   
RUM002N02T2L


ROHM Semiconductor MOSFET SW MOSFET SMLL SIG N-CH 20V .2A
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ROHM 51157
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AUD 0.027
Multiples of: 20

200 mA20 V1.2 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel2.5 V Enhancement  
2N7002KW


MOSFET N Channel 60V 340mA 2.5V @ 1mA 2.5O @ 500mA,10V SOT-323 RoHS
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Changjing Electronics Technology 13095
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AUD 0.0292
Multiples of: 20

                   
DMP1046UFDB-13


Diodes Incorporated MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC
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Diodes Incorporated 0
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AUD 55.9756
Multiples of: 1

3.8 A12 V37 mOhms , 37 mOhmsP - Channel 1 V- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - B - 6ReelSi2 Channel8 V17.9 nC , 17.9 nCEnhancement  
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