MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138BK


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper 63544
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AUD 0.0143
Multiples of: 10

                   
IRF840PBF


N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 63073
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AUD 0.6573
Multiples of: 1

8 A500 V850 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V63 nCEnhancement  
SI4143DY-T1-GE3


MOSFET P-Channel 30-V (D-S)
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Vishay 63050
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AUD 0.595
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           Reelsi      
IRF3805STRL-7PP


Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
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Infineon 62856
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AUD 3.4821
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240 A55 V2.6 mOhmsN - Channel  - 55 C 300 WSmd/SmtD2PAKReelSi1 Channel20 V130 nCEnhancement  
ZXMN3A14FTA


N-Channel 30 V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 62603
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AUD 0.3724
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3.9 A30 V95 mOhmsN - channel20 V - 55 C+ 150 C1 WSmd/smtSOT - 23 - 3ReelSi1 Channel20 V Enhancement  
RUM002N02T2L


ROHM Semiconductor MOSFET SW MOSFET SMLL SIG N-CH 20V .2A
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ROHM 62177
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AUD 0.0251
Multiples of: 20

200 mA20 V1.2 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel2.5 V Enhancement  
Hot IRF7853TRPBF


MOSFET N Trench 100V 8.3A 4.9V @ 100uA 18 mΩ @ 8.3A,10V SOIC-8_150mil RoHS
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Infineon 62080
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AUD 0.8214
Multiples of: 4000

8.3 A100 V18 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V28 nC   
2N7002


Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.35W; SOT23
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Diotec 61988
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AUD 0.066
Multiples of: 1

                   
CJ3139K (SOT-723)


MOSFET P Trench 20V 660mA 1.1V @ 250uA 520 mΩ @ 1A,4.5V SOT-723 RoHS
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Changjing Electronics Technology 60081
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AUD 0.0282
Multiples of: 20

                   
NTD4805NT4G


ON Semiconductor MOSFET NFET 30V 88A 5MOHM
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ON Semiconductor 0
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AUD 0.0289
Multiples of: 1

88 A30 V5 mOhmsN - Channel  - 55 C+ 175 C2.24 WSmd/SmtDPAK - 3ReelSi1 Channel20 V Enhancement  
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