MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2300A


MOSFET N Trench 20V 6A 1V @ 50uA 25 mΩ @ 6A,4.5V SOT-23 RoHS
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Youtai 98532
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AUD 0.0238
Multiples of: 20

                   
IAUCN04S7N020ATMA1


MOSFETs N
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Infineon 63050
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AUD 0.6567
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139 A40 V2.05 mOhmsN - Channel 2.6 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25 nCEnhancement  
SI4143DY-T1-GE3


MOSFET P-Channel 30-V (D-S)
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Vishay 63040
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AUD 0.6216
Multiples of: 1

           Reelsi      
PJA3461_R1_00001


MOSFET /A61/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-60TMP/NF60T-QI05/PJ///
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Panjit 63005
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AUD 0.182
Multiples of: 1

           Cut Tape       
BSS138BK


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 62603
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AUD 0.0149
Multiples of: 10

                   
ZXMN3A14FTA


N-Channel 30 V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 62603
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AUD 0.3724
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3.9 A30 V95 mOhmsN - channel20 V - 55 C+ 150 C1 WSmd/smtSOT - 23 - 3ReelSi1 Channel20 V Enhancement  
SI2338DS-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 62587
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AUD 0.2545
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6 A30 V28 mOhmsN - Channel 2.5 V- 55 C+ 150 C2.5 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V4.2 nCEnhancement  
AO3407A


30V 4.5A 1.4W 38m@10V,4.5A 1.5V@250uA 1PCSPChannel SOT-23-3L MOSFETs ROHS
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ElecSuper 61003
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AUD 0.0423
Multiples of: 10

                   
NX7002AKVL


MOSFET NX7002AK/TO-236AB/REEL 11" Q3/
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Nexperia 52358
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AUD 0.0296
Multiples of: 1

190 mA60 V4.5 OhmsN - Channel 1.1 V- 55 C+ 150 C325 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V0.33 nCEnhancement  
IPD025N06NATMA1


MOSFET MV POWER MOS
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Infineon 7664
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AUD 1.5556
Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtTO - 252 - 3Reel      Optimos
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