MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3404LQ-7


MOSFET MOSFET BVDSS: 25V~30V SOT23 T&R 3K
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Diodes Incorporated 81480
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AUD 0.813
Multiples of: 3000

           -       
AO3400A


30V 5.8A 1PCSNChannel SOT-23-3L MOSFETs ROHS
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GOODWORK 58394
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AUD 0.0367
Multiples of: 20

                   
DMP2240UWQ-7


Diodes Incorporated MOSFET P-Ch Enh Mode FET VDSS -20V -12VGSS
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Diodes Incorporated 58200
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AUD 0.2631
Multiples of: 1

- 1.5 A- 20 V134 mOhmsP - Channel - 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel12 V EnhancementAec - Q101 
STD15P6F6AG


null 10A 160mO@5A,10V 35W P Channel TO-252 MOSFETs ROHS
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STMicroelectronics 58200
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AUD 0.5019
Multiples of: 2500

- 10 A- 60 V0.13 OhmsP - Channel - 2 V-+ 175 C35 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V6.4 nCEnhancementAec - Q101Stripfet
STD25NF10T4


Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
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STMicroelectronics 58200
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AUD 0.8237
Multiples of: 2500

            supermesh      
STL7N80K5


MOSFET N-Ch 800V .95Ohm typ 3.6A Zener-protected
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STMicroelectronics 58200
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AUD 1.2806
Multiples of: 3000

3.6 A800 V1.2 OhmsN - Channel30 V4 V- 55 C+ 150 C42 WSmd/SmtPowerflat - 8 5X6Reel   13.4 nC   
AUIRFR2905ZTRL


MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms
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Infineon 58200
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AUD 1.8942
Multiples of: 1

59 A55 V14.5 mOhmsN - Channel 4 V- 55 C+ 175 C110 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V29 nC Aec - Q101 
SQ3419AEEV-T1_BE3


MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 58141
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AUD 0.4253
Multiples of: 1

6.9 A40 V61 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 12 V , 12 V8.4 nCEnhancement  
IRF3710PBF


MOSFET N Trench 100V 57A 4V @ 250uA 23 mΩ @ 28A,10V TO-220 (TO-220-3) RoHS
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Infineon 49353
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AUD 0.5477
Multiples of: 1

            Hexfet®      
Hot IRF630NPBF


MOSFET N Trench 200V 9.3A 4V @ 250uA 300 mΩ @ 5.4A,10V TO-220 (TO-220-3) RoHS
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Infineon 111
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AUD 0.4761
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
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