MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2V7002WT1G


N-Channel 60 V 310mA (Ta) 280mW (Tj) Surface Mount SC-70-3 (SOT323)
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ON Semiconductor 58200
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AUD 0.0939
Multiples of: 3000

310 mA60 V1.33 OhmsN - Channel20 V2.5 V- 55 C+ 150 C280 mWSmd/SmtSC - 70 - 3ReelSi1 Channel20 V0.7 nCEnhancementAec - Q101 
NTJD1155LT1G


MOSFET 8V +/-1.3A P-Channel w/Level Shift
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ON Semiconductor 58200
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AUD 0.17
Multiples of: 3000

1.3 A8 V175 mOhmsP - Channel 400 mV- 55 C+ 150 C400 mWSmd/SmtSC - 88 - 6Cut TapeSi2 Channel4.5 V Enhancement  
MCH6422-TL-E


MCH6422-TL-E
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ON Semiconductor 58200
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AUD 0.1829
Multiples of: 1

                   
IRFR024NTRPBF


MOSFET N Trench 55V 17A 4V @ 250uA 75 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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Infineon 58200
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AUD 0.2272
Multiples of: 5

            Hexfet®      
DMP2240UWQ-7


Diodes Incorporated MOSFET P-Ch Enh Mode FET VDSS -20V -12VGSS
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Diodes Incorporated 58200
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AUD 0.2518
Multiples of: 1

- 1.5 A- 20 V134 mOhmsP - Channel - 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel12 V EnhancementAec - Q101 
STD10P10F6


MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
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STMicroelectronics 58200
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AUD 0.5982
Multiples of: 2500

10 A100 V180 mOhmsP - Channel 2 V + 175 C40 WSmd/SmtDPAK - 3 -1 Channel+/- 20 V16.5 nCEnhancement  
STL7N80K5


MOSFET N-Ch 800V .95Ohm typ 3.6A Zener-protected
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STMicroelectronics 58200
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AUD 1.2257
Multiples of: 3000

3.6 A800 V1.2 OhmsN - Channel30 V4 V- 55 C+ 150 C42 WSmd/SmtPowerflat - 8 5X6Reel   13.4 nC   
AUIRFR2905ZTRL


MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms
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Infineon 58200
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AUD 1.813
Multiples of: 1

59 A55 V14.5 mOhmsN - Channel 4 V- 55 C+ 175 C110 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V29 nC Aec - Q101 
Hot IRF630NPBF


MOSFET N Trench 200V 9.3A 4V @ 250uA 300 mΩ @ 5.4A,10V TO-220 (TO-220-3) RoHS
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Infineon 58141
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AUD 0.2835
Multiples of: 5

   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
SQ3419AEEV-T1_BE3


MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 58141
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AUD 0.4253
Multiples of: 1

6.9 A40 V61 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 12 V , 12 V8.4 nCEnhancement  
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