MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDS331N


mosfet n trench 20v 1.3a 1v @ 250ua 160 m @ 1.5a,4.5v ssot-3 rohs
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ON Semiconductor 480150
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AUD 0.1329
Multiples of: 3000

   N Channel               
FDC610PZ


MOSFET -30V P-CHANNEL
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ON Semiconductor 49470
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AUD 0.2912
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4.9 A30 V58 mOhmsP - Channel 3 V- 55 C+ 150 C1.6 WSMD/SMTSSOT - 6Reel , Cut TapeSi1 Channel- 25 V , 25 V24 nCEnhancement PowerTrench
STS9D8NH3LL


MOSFET Dual N Ch 30V 0.012Ohm 9A
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STMicroelectronics 49470
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AUD 0.4552
Multiples of: 1

8 A30 V22 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel16 V Enhancement  
SI3424CDV-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 49124
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AUD 0.2558
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8 A30 V26 mOhmsN - Channel 2.5 V- 55 C+ 150 C3.6 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V4.2 nCEnhancement  
SQ3481EV-T1_BE3


MOSFET P-CHANNEL 30V D-S
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Vishay 49117
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AUD 0.4731
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7.5 A30 V35 mOhmsP - Channel 2.5 V- 55 C+ 175 C4 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V15.4 nCEnhancement TrenchFET
SI3437DV-T1-E3


MOSFET 150V 1.4A 3.2W 750 mohms @ 10V
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Vishay 48751
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AUD 0.4981
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1.4 A150 V750 mOhmsP - Channel 2 V- 55 C+ 150 C3.2 WSmd/SmtTSOP - 6ReelSi1 Channel- 10 V12.2 nCEnhancement Trenchfet
FDC3612


MOSFET 100V NCh PowerTrench
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ON Semiconductor 43650
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AUD 0.3255
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2.6 A100 V125 mOhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel20 V Enhancement Powertrench
BSS123.215


Transistor: N-MOSFET; unipolar; 100V; 150mA; 250mW; SOT23
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Nexperia 41045
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AUD 0.084
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SPD18P06PGBTMA1


MOSFET P-Ch -60V -18.6A DPAK-2
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Infineon 31426
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AUD 0.6914
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18.6 A60 V100 mOhmsP - Channel 4 V- 55 C+ 175 C80 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V33 nCEnhancement  
DMG4800LFG-7


MOSFET ENHANCE MODE MOSFET 30V/4.82 - 7.44A
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Diodes Incorporated 101
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AUD 0.4171
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7.44 A30 V11 mOhmsN - Channel 800 mV- 55 C+ 150 C940 mWSmd/SmtDFN3030 - 8ReelSi1 Channel25 V9.47 nCEnhancement  
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