MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTR1P02LT1G


MOSFET -20V -1.3A P-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 55290
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AUD 0.1049
Multiples of: 3000

1.3 A20 V350 mOhmsP - Channel 700 mV- 55 C+ 150 C400 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel2.5 V3.1 nCEnhancement  
2N7002V


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 55290
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AUD 0.1667
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 563F - 6Reel       
SI3456DDV-T1-GE3


MOSFET 30V 6.3A 2.7W 40mohm @ 10V
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Vishay 55290
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AUD 0.1815
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
PMV40UN2R


N-Channel 30 V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB
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Nexperia 55290
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AUD 0.3134
Multiples of: 3000

4.4 A30 V44 mOhmsN - Channel 400 mV- 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V7 nCEnhancement  
FDMA1029PZ


Mosfet Array 2 P-Channel (Dual) 20V 3.1A 700mW Surface Mount 7-SOIC
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ON Semiconductor 55290
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AUD 0.3521
Multiples of: 3000

3.1 A20 V60 mOhmsP - Channel  - 55 C+ 150 C1.4 WSmd/SmtMICRO - FETReelSi2 Channel12 V Enhancement Powertrench
AON7544


MOSFET N Trench 30V 30A (Tc) 2.2V @ 250uA 5 mΩ @ 20A,10V DFN-8_3x3 EP RoHS
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Alpha & Omega 55066
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AUD 0.1219
Multiples of: 5

                   
IRFB7545PBF


Transistor: N-MOSFET; unipolar; 60V; 95A; 125W; TO220AB
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Infineon 55027
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AUD 0.5796
Multiples of: 1

95 A60 V4.9 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C125 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V75 nC  Strongirfet
SI3456DDV-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 54851
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AUD 1.122
Multiples of: 1

6.3 A30 V40 mOhmsN - Channel 3 V- 55 C+ 150 C2.7 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V2.8 nCEnhancement  
IPA50R199CPXKSA1


Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
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Infineon 54834
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AUD 3.1017
Multiples of: 1

            coolmos      
2N7002K


MOSFET 60V, 115mA N-Chan
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ON Semiconductor 26190
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AUD 0.0489
Multiples of: 3000

300 mA60 V2 OhmsN - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V Enhancement  
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