MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP057N08N3GXKSA1


Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO220-3
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Infineon 53835
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AUD 2.1036
Multiples of: 1

            Optimos 3      
SI2302


20V 3.3A 1PCSNChannel SOT-23 MOSFETs ROHS
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FOSAN 53738
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AUD 0.0147
Multiples of: 50

                   
SI2304BDS-T1-E3


MOSFET 30V 3.2A 0.07Ohm
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Vishay 53731
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AUD 0.3787
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
SUD19P06-60L-E3


Vishay Semiconductors MOSFET 60V 19A 46W 60mohm 10V
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Vishay 53566
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AUD 0.8046
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19 A- 60 V60 mOhmsP - Channel  - 55 C+ 175 C2.7 WSmd/SmtDPAK - 3ReelSi 20 V Enhancement Trenchfet
AO3402


MOSFET SOT23 RoHS
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TWGMC 53544
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AUD 0.038
Multiples of: 10

                   
IPD30N06S2L23ATMA3


Infineon Technologies MOSFET
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Infineon 53524
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AUD 0.7763
Multiples of: 1

30 A55 V15.9 mOhmsN - Channel 1.6 V- 55 C+ 175 C100 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V33 nCEnhancementAec - Q101 
TK10A80E,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba 53425
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AUD 0.7984
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STD15P6F6AG


null 10A 160mO@5A,10V 35W P Channel TO-252 MOSFETs ROHS
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STMicroelectronics 53350
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AUD 0.4804
Multiples of: 2500

- 10 A- 60 V0.13 OhmsP - Channel - 2 V-+ 175 C35 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V6.4 nCEnhancementAec - Q101Stripfet
YJL02N10A


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
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Yangjie 50575
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AUD 0.0455
Multiples of: 10

            Trench Power Mv      
SI2305A


MOSFET P Trench 20V 4.2A 500mV @ 250uA（Min） 65 mΩ @ 4.2A,4.5V SOT-23 RoHS
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Youtai 47297
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AUD 0.033
Multiples of: 10

                   
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