MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot ZXMS6004FFTA


MOSFET 60V N-Channel self protected
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 52827
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AUD 0.4515
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1.3 A60 V500 mOhmsN - Channel 700 mV- 40 C+ 125 C1.5 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel5 V Enhancement Intellifet
BST82.215


Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23
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Nexperia 51456
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AUD 0.3444
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DMP6110SFDF-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 51128
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AUD 0.2463
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           Cut TapeSi      
2N7002TQ-7-F


60V 115mA 7.5O@5V,50mA 150mW N Channel SOT-523-3 MOSFETs ROHS
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Diodes Incorporated 50997
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AUD 0.0692
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115 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtSOT - 523 - 3ReelSi1 Channel+/- 20 V Enhancement  
DMTH6016LSD-13


MOSFET 2 N Channel (Dual) 60V 7.6A 2.5V @ 250uA 19.5 mΩ @ 10A,10V SO-8 RoHS
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Diodes Incorporated 50960
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AUD 0.5401
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         Smd/SmtSO - 8Cut TapeSi      
SI2309A


SOT-23 MOSFETs ROHS
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Youtai 50934
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AUD 0.0374
Multiples of: 10

                   
PSMN014-40YS,115


MOSFET N-CHAN 40V 32A
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Nexperia 50843
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AUD 0.3892
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32 A40 V14 mOhmsN - Channel  - 55 C+ 175 C56 WSmd/SmtLFPAKReelSi1 Channel20 V    
PSMN026-80YS,115


MOSFET N-CH 80V 27.5 mOhm Standard MOSFET
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Nexperia 50766
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AUD 0.5797
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34 A80 V27.5 mOhmsN - Channel    74 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel     
FDP090N10


MOSFET 100V 75A N-Chan PowerTrench
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ON Semiconductor 50748
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AUD 4.3289
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75 A100 V9 mOhmsn - channel  - 55 C+ 175 C208 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement powertrench
TN2404K-T1-E3


MOSFET 240V 0.2A 4.0Ohm
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Vishay 50745
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AUD 0.4712
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200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.87 nCEnhancement Trenchfet
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