MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PHT6NQ10T,135


N-Channel 100 V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
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Nexperia 197880
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AUD 1.0905
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   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 223Reel       
DMTH6004SK3-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 49895
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AUD 0.9429
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         Smd/SmtTO - 252 - 3Cut TapeSi      
FDC3612


MOSFET 100V NCh PowerTrench
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ON Semiconductor 49470
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AUD 0.3635
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2.6 A100 V125 mOhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel20 V Enhancement Powertrench
STS9D8NH3LL


MOSFET Dual N Ch 30V 0.012Ohm 9A
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STMicroelectronics 49470
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AUD 0.5126
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8 A30 V22 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel16 V Enhancement  
FDMS7658AS


MOSFET PT7 30/20V Nch PowerTrench SyncFET
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ON Semiconductor 49222
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AUD 0.994
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49 A30 V2 mOhmsN - Channel  - 55 C+ 150 C89 WSmd/SmtPOWER - 56ReelSi1 Channel20 V   Powertrench Syncfet
SI3424CDV-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 49124
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AUD 0.2558
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8 A30 V26 mOhmsN - Channel 2.5 V- 55 C+ 150 C3.6 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V4.2 nCEnhancement  
SQ3481EV-T1_BE3


MOSFET P-CHANNEL 30V D-S
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Vishay 49117
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AUD 0.4731
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7.5 A30 V35 mOhmsP - Channel 2.5 V- 55 C+ 175 C4 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V15.4 nCEnhancement TrenchFET
IRFL110TRPBF-BE3


MOSFET 100V N-CH HEXFET
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Vishay 49001
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AUD 0.8602
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1.5 A100 V540 mOhmsN - Channel 4 V- 55 C+ 150 C3.1 WSMD/SMTSOT - 223 - 4Cut Tape , ReelSi1 Channel- 20 V , + 20 V8.3 nCEnhancement  
RUF015N02TL


N-Channel 20 V 1.5A (Ta) 800mW (Ta) Surface Mount TUMT3
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ROHM 40740
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AUD 0.2302
Multiples of: 3000

1.5 A20 V180 mOhmsN - Channel 300 mV- 55 C+ 150 C0.8 WSmd/SmtTUMT - 3ReelSi1 Channel4.5 V1.8 nCEnhancement  
IRLML6244TRPBF


MOSFET N Trench 20V 6.3A 1.1V @ 10uA 21 mΩ @ 6.3A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 213
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AUD 0.0988
Multiples of: 5

            Hexfet®      
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