MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AON7544


MOSFET N Trench 30V 30A (Tc) 2.2V @ 250uA 5 mΩ @ 20A,10V DFN-8_3x3 EP RoHS
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Alpha & Omega 55066
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AUD 0.1219
Multiples of: 5

                   
STP3NK90ZFP


Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP
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STMicroelectronics 54961
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AUD 0.9871
Multiples of: 1

            Supermesh      
SI3456DDV-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 54851
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AUD 1.122
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6.3 A30 V40 mOhmsN - Channel 3 V- 55 C+ 150 C2.7 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V2.8 nCEnhancement  
SIR122DP-T1-RE3


MOSFET 80V Vds 20V Vgs PowerPAK SO-8
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Vishay 54434
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AUD 0.6198
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59.6 A80 V7.4 mOhmsN - Channel 2 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V44 nCEnhancement Trenchfet, Powerpak
NTLJS4114NTAG


MOSFET NFET WDFN6 30V 7.8A
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ON Semiconductor 54275
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AUD 0.4769
Multiples of: 1

           Cut TapeSi      
DMN3042L-13


MOSFET 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF
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Diodes Incorporated 53738
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AUD 0.117
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5.8 A30 V21 mOhmsN - Channel 600 mV- 55 C+ 150 C720 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 12 V20 nCEnhancement  
2N7000TA


Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
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Samsung 53398
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AUD 0.1283
Multiples of: 1

                   
BSC054N04NSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
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Infineon 52804
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AUD 0.4714
Multiples of: 1

            Optimos 3      
IRF640NPBF


MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 11A,10V TO-220 (TO-220-3) RoHS
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Infineon 5790
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AUD 0.2511
Multiples of: 5

18 A200 V150 mOhmsN - Channel  - 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V44.7 nCEnhancement  
FDB2532


Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK
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ON Semiconductor 3880
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AUD 2.9423
Multiples of: 800

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