MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SK3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 55 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Shikues 56580
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AUD 0.0484
Multiples of: 10

                   
IRLL014NTRPBF


MOSFET N Trench 55V 2A 2V @ 250uA 140 mΩ @ 2A,10V SOT-223 RoHS
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Infineon 56357
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AUD 0.2496
Multiples of: 1

            Hexfet®      
AO3403


MOSFET P Trench 30V 2.6A 1.4V @ 250uA 115 mΩ @ 2.6A,10V SOT-23-3L RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega 56323
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AUD 0.0925
Multiples of: 5

                   
AO3402


MOSFET N Trench 30V 4A 1.4V @ 250uA 55 mΩ @ 4A,10V SOT-23 RoHS
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PUOLOP 56221
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AUD 0.0399
Multiples of: 20

                   
IRF6668TRPBF


International Rectifier MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC
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Infineon 56202
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AUD 1.9746
Multiples of: 1

55 A80 V12 mOhmsN - Channel20 V4 V- 40 C+ 150 C2.8 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V22 nCEnhancement Directfet
FDG311N


MOSFET SC70-6 N-CH 20V
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ON Semiconductor 56132
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AUD 0.3692
Multiples of: 1

1.9 A20 V115 mOhmsn - channel  - 55 C+ 150 C750 mWsmd/smtSC - 70 - 6Reelsi1 channel8 V enhancement powertrench
SI1539CDL-T1-BE3


Mosfet Array N and P-Channel 30V 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) 290mW (Ta), 340mW (Tc) Surface Mount SC-70-6
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Vishay 56005
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AUD 0.1623
Multiples of: 1

          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®       
SI3458BDV-T1-E3


MOSFET 60V 4.1A 3.3W 100mohm @ 10V
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Vishay 55799
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AUD 0.5203
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
SPD30P06PGBTMA1


MOSFET P-Ch -60V -30A DPAK-2
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Infineon 55775
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AUD 0.8097
Multiples of: 1

30 A60 V69 mOhmsP - Channel 4 V- 55 C+ 175 C125 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V48 nCEnhancement  
WST4041


MOSFET P Trench 40V 6A 2.2V @ 250uA 40 mΩ @ 3A,10V SOT-23 (SOT-23-3) RoHS
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Winsok 55630
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between Fri. 27 Feb to Wed. 04 Mar Calender.png

AUD 0.1462
Multiples of: 5

                   
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