MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1480DH-T1-BE3


N-Channel 100V 2.1A (Ta), 2.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 52867
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AUD 0.2341
Multiples of: 1

2.6 A100 V200 mOhmsN - Channel 3 V- 55 C+ 150 C2.8 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 20 V , 20 V5 nCEnhancement TrenchFET
NDS7002A


Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.3W; SOT23
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ON Semiconductor 52380
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AUD 0.0496
Multiples of: 3000

   N Channel               
BSS315PH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
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Infineon 52380
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AUD 0.0831
Multiples of: 1

            Optimos P2      
SIS434DN-T1-GE3


N-Channel 40 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 52380
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AUD 0.5583
Multiples of: 3000

35 A40 V6.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel20 V40 nCEnhancement Trenchfet, Powerpak
IRF6668TRPBF


International Rectifier MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC
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Infineon 52027
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AUD 1.5363
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55 A80 V12 mOhmsN - Channel20 V4 V- 40 C+ 150 C2.8 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V22 nCEnhancement Directfet
AO4407


30V 12A 8m@10V,12.0A 3.1W 1.5V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS
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ElecSuper 37466
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AUD 0.1175
Multiples of: 5

                   
NCE6003X


SOT-23 MOSFETs ROHS
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NCE Power 22659
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AUD 0.0465
Multiples of: 10

                   
BSR316PH6327XTSA1


Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
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Infineon 19904
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AUD 0.2
Multiples of: 540

            Sipmos      
IRFL9014TRPBF


MOSFET P-Chan 60V 1.1 Amp
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Vishay 14550
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AUD 0.3333
Multiples of: 2500

1.8 A60 V500 mOhmsP - Channel 2 V- 55 C+ 150 C3.1 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V12 nCEnhancement  
EM6K34T2CR


ROHM Semiconductor MOSFET
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ROHM 1907
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AUD 0.1073
Multiples of: 1

200 mA50 V2.2 OhmsN - Channel 300 mV + 150 C150 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel4.5 V Enhancement  
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