MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1967DH-T1-E3


MOSFET 20V 1.3A 1.25W 490mohm @ 4.5V
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Vishay 56521
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AUD 0.2025
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   P - Channel  - 55 C+ 150 C Smd/SmtSC - 70 - 6ReelSi     Trenchfet
FS8205A


20V 6A 19.5mΩ@4.5V,3A 1.5W 700mV@250uA 58pF@10V 2 N-Channel 466pF@10V 5.7nC@10V -55℃~+150℃@(Tj) SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 56473
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AUD 0.0493
Multiples of: 10

                   
SI1539CDL-T1-BE3


Mosfet Array N and P-Channel 30V 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) 290mW (Ta), 340mW (Tc) Surface Mount SC-70-6
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Vishay 56005
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AUD 0.1623
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          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®       
SI3458BDV-T1-E3


MOSFET 60V 4.1A 3.3W 100mohm @ 10V
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Vishay 55799
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AUD 0.5203
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   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
DMN2055U-13


MOSFET MOSFET BVDSS: 8V 24V SOT23 T&R 10K
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Diodes Incorporated 55635
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AUD 0.1152
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4.8 A20 V38 mOhmsN - Channel 400 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V4.3 nCEnhancement  
WST4041


MOSFET P Trench 40V 6A 2.2V @ 250uA 40 mΩ @ 3A,10V SOT-23 (SOT-23-3) RoHS
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Winsok 55630
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AUD 0.1462
Multiples of: 5

                   
FDD18N20LZ


Fairchild Semiconductor MOSFET 200V NChannel UniFET
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ON Semiconductor 55223
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AUD 1.4981
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16 A200 V125 mOhmsN - Channel  - 55 C+ 150 C89 WThrough HoleDPAK - 3ReelSi1 Channel    Unifet
SSM3K324R,LF


Toshiba MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
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Toshiba 49945
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AUD 0.0538
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4 A30 V109 mOhmsN - Channel 0.4 v to 1 V + 150 C2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V2.2 nCEnhancement  
BSS606NH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
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Infineon 9890
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AUD 0.2392
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            Optimos 3      
STD20NF06T4


Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK
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STMicroelectronics 2410
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AUD 0.9444
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