MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
15N10


100V 15A 85mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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HL 57176
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AUD 0.0827
Multiples of: 5

                   
AOD403


MOSFET P Trench 30V 15A 3.5V @ 250uA 6 mΩ @ 20A,20V TO-252-2 (DPAK) RoHS
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Alpha & Omega 57040
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AUD 0.3365
Multiples of: 1

                   
SQJ951EP-T1_BE3


MOSFET DUAL P-CHANNEL 30V
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Vishay 56934
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AUD 1.1314
Multiples of: 1

30 A30 V14 mOhmsP - Channel 2.5 V- 55 C+ 175 C56 WSMD/SMTPOWERPAK - SO - 8 - 4Trenchfet , Cut Tape , ReelSi2 Channel- 20 V , + 20 V50 nCEnhancement TrenchFET
RZM002P02T2L


MOSFET TRANS MOSFET P-CH 20V 0.2A TR
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ROHM 56589
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AUD 0.0274
Multiples of: 20

200 mA20 V1.2 OhmsP - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel- 4.5 V1.4 nCEnhancement  
3400


30V 5.8A 25mΩ 1.3V N Channel SOT23 MOSFETs ROHS
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HL 56357
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AUD 0.0187
Multiples of: 50

                   
9435


MOSFET P Trench 30V 5.1A 2V @ 250uA 70 mΩ @ 4.7A,6V SOP-8_150mil RoHS
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Hottech 56327
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AUD 0.0716
Multiples of: 10

                   
SI8810EDB-T2-E1


Vishay Semiconductors MOSFET 20V .072ohm4.5V 2.9A N-Ch
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Vishay 56313
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AUD 0.1854
Multiples of: 1

2.1 A20 V72 mOhmsN - Channel 0.9 V- 55 C+ 150 C500 mWSmd/SmtXFBGA - 4ReelSi  8 nC  Trenchfet
SI7469DP-T1-E3


P-Channel 80 V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 56113
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AUD 1.8071
Multiples of: 1

28 A- 80 V25 mOhmsP - Channel20 V - 55 C+ 150 C83 WSmd/SmtSO - 8Reel    Enhancement  
AO3415A


MOSFET P Trench 20V 4A 1V @ 250uA 50 mΩ @ 4A,4.5V SOT-23 RoHS
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Youtai 43223
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AUD 0.0359
Multiples of: 10

                   
Hot EM6M2T2R


ROHM Semiconductor MOSFET 1.2V Drive NchPch MOSFET
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ROHM 10301
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AUD 0.0712
Multiples of: 10

200 mA20 V700 mOhmsN - Channel, P - Channel10 V300 mV- 55 C+ 150 C150 mWSmd/SmtEMT - 6ReelSi2 Channel- 4.5 v , 4 V Enhancement  
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