MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ951EP-T1_BE3


MOSFET DUAL P-CHANNEL 30V
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Vishay 56934
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AUD 1.1314
Multiples of: 1

30 A30 V14 mOhmsP - Channel 2.5 V- 55 C+ 175 C56 WSMD/SMTPOWERPAK - SO - 8 - 4Trenchfet , Cut Tape , ReelSi2 Channel- 20 V , + 20 V50 nCEnhancement TrenchFET
AO4406A


SOP-8 MOSFETs ROHS
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Youtai 56875
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AUD 0.0949
Multiples of: 5

                   
AP2301


MOSFET P Trench 20V 3A 1V @ 250uA 110 mΩ @ 3A,4.5V SOT-23 RoHS
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Quan Li 55348
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AUD 0.0413
Multiples of: 20

                   
NX3020NAKS,115


MOSFET NX3020NAKS/SC-88/REEL7
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Nexperia 55290
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AUD 0.0664
Multiples of: 3000

180 mA30 V2.7 OhmsN - Channel 1.2 V- 55 C+ 150 C1.1 WSmd/SmtTSSOP - 6Reel   0.34 nCEnhancement  
DMP21D0UFD-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K
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Diodes Incorporated 55290
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AUD 0.1319
Multiples of: 3000

1.14 A20 V1.3 OhmsP - Channel 1.2 V- 55 C+ 150 C930 mWSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel8 V1.5 nCEnhancement  
FDG311N


MOSFET SC70-6 N-CH 20V
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ON Semiconductor 55117
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AUD 0.3313
Multiples of: 1

1.9 A20 V115 mOhmsn - channel  - 55 C+ 150 C750 mWsmd/smtSC - 70 - 6Reelsi1 channel8 V enhancement powertrench
SI3456DDV-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 54851
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AUD 1.122
Multiples of: 1

6.3 A30 V40 mOhmsN - Channel 3 V- 55 C+ 150 C2.7 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V2.8 nCEnhancement  
IPA50R199CPXKSA1


Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
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Infineon 54834
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AUD 3.1017
Multiples of: 1

            coolmos      
RK7002BMT116


N-Channel 60 V 250mA (Ta) 200mW (Ta) Surface Mount SST3
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ROHM 28973
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AUD 0.0483
Multiples of: 1

250 mA60 V2.4 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
IRLR8726TRPBF


N-Channel 30 V 86A (Tc) 75W (Tc) Surface Mount D-Pak
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Infineon 3921
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AUD 0.4576
Multiples of: 1

86 A30 V8 mOhmsN - Channel 2.35 V- 55 C+ 175 C75 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
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