MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD15NF10T4


Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK
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STMicroelectronics 58200
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AUD 0.4578
Multiples of: 2500

            Supermesh      
STD15P6F6AG


null 10A 160mO@5A,10V 35W P Channel TO-252 MOSFETs ROHS
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STMicroelectronics 58200
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AUD 0.5873
Multiples of: 2500

- 10 A- 60 V0.13 OhmsP - Channel - 2 V-+ 175 C35 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V6.4 nCEnhancementAec - Q101Stripfet
IRF7410TRPBF


MOSFET P Trench 12V 16A 900mV @ 250uA 7 mΩ @ 16A,4.5V SOIC-8_150mil RoHS
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Infineon 58200
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AUD 0.6296
Multiples of: 4000

16 A12 V7 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel8 V91 nC   
AUIRFR2905ZTRL


MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms
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Infineon 58200
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AUD 1.2871
Multiples of: 3000

59 A55 V14.5 mOhmsN - Channel 4 V- 55 C+ 175 C110 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V29 nC Aec - Q101 
SI1416EDH-T1-BE3


N-Channel 30V 3.9A (Ta), 3.9A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 58149
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AUD 0.1731
Multiples of: 1

3.9 A30 V58 mOhmsN - Channel 1.4 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Cut Tape , ReelSi1 Channel- 12 V , + 12 V12 nCEnhancement TrenchFET
SQ3419AEEV-T1_BE3


MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 58141
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AUD 0.4253
Multiples of: 1

6.9 A40 V61 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 12 V , + 12 V8.4 nCEnhancement  
ZXMP6A13FQTA


Diodes Incorporated MOSFET 60V P-Ch Enh Fet 20Vgs 625pD 219pF
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Diodes Incorporated 58099
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AUD 0.2331
Multiples of: 1

- 1.1 A- 60 V400 mOhmsP - channel - 3 V- 55 C+ 150 C806 mWSmd/smtSOT23Reel-1 Channel+/- 20 V2.9 nCEnhancementAec - Q101 
BSS138DWQ-13


MOSFET BSS Family
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Diodes Incorporated 58082
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AUD 0.1865
Multiples of: 1

         Smd/SmtSOT - 363 - 6Cut TapeSi    Aec - Q101 
DMN2050LFDB-13


MOSFET DUAL N-CH EH MODE 20V 45mOhm 4.5A
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Diodes Incorporated 57981
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AUD 0.2404
Multiples of: 1

   N - Channel     Smd/SmtU - DFN2020 - B - 6Cut TapeSi2 Channel     
9435


MOSFET P Trench 30V 5.1A 2V @ 250uA 70 mΩ @ 4.7A,6V SOP-8_150mil RoHS
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Hottech 57966
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AUD 0.0646
Multiples of: 10

                   
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First...5152535455...

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