MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LBSS123LT1G


MOSFET N Trench 100V 170mA 2V @ 1mA 6 Ω @ 100mA,10V SOT-23 (SOT-23-3) RoHS
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Leshan 57792
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AUD 0.0189
Multiples of: 20

                   
SI2301


MOSFET SOT23 RoHS
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TWGMC 57659
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AUD 0.0251
Multiples of: 20

                   
SI2308


60V 3A 86mΩ@10V,3A null SOT-23 MOSFETs ROHS
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HXY MOS 57326
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AUD 0.0359
Multiples of: 10

                   
DMC2710UDW-7


MOSFET MOSFET BVDSS: 8V~24V SOT363 T&R 3K
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Diodes Incorporated 57095
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AUD 0.0786
Multiples of: 1

           Cut Tape       
NCE6050A


60V 50A 14mO@10V,20A 85W N Channel TO-220 MOSFETs ROHS
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NCE Power 57026
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AUD 0.2604
Multiples of: 5

                   
SQJ951EP-T1_BE3


MOSFET DUAL P-CHANNEL 30V
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Vishay 56934
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AUD 1.1314
Multiples of: 1

30 A30 V14 mOhmsP - Channel 2.5 V- 55 C+ 175 C56 WSMD/SMTPOWERPAK - SO - 8 - 4Trenchfet , Cut Tape , ReelSi2 Channel- 20 V , + 20 V50 nCEnhancement TrenchFET
HSS2N7002K


MOSFET N Channel 60V 0.3A 2.5V @ 250uA 2O @ 0.2A,10V SOT-23-3 RoHS
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HUASHUO 56914
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AUD 0.0154
Multiples of: 50

                   
SK3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 55 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Shikues 56580
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AUD 0.0484
Multiples of: 10

                   
SUD19P06-60L-E3


Vishay Semiconductors MOSFET 60V 19A 46W 60mohm 10V
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Vishay 56561
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AUD 0.8084
Multiples of: 1

19 A- 60 V60 mOhmsP - Channel  - 55 C+ 175 C2.7 WSmd/SmtDPAK - 3ReelSi 20 V Enhancement Trenchfet
BSS306N H6327


Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3
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Infineon 33470
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AUD 0.1152
Multiples of: 1

2.3 A30 V44 mOhmsN - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V1.5 nCEnhancementAec - Q101 
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