MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDS7002A


Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.3W; SOT23
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ON Semiconductor 58200
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AUD 0.0368
Multiples of: 3000

   N Channel               
DMP2240UWQ-7


Diodes Incorporated MOSFET P-Ch Enh Mode FET VDSS -20V -12VGSS
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Diodes Incorporated 58200
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AUD 0.1416
Multiples of: 3000

- 1.5 A- 20 V134 mOhmsP - Channel - 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel12 V EnhancementAec - Q101 
MCH6422-TL-E


MCH6422-TL-E
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ON Semiconductor 58200
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AUD 0.191
Multiples of: 1

                   
NDC7001C


Transistor: N/P-MOSFET; unipolar; 60/-60V; 0.51/0.34A; 0.96W
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ON Semiconductor 58200
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AUD 0.2233
Multiples of: 3000

                   
BSP295H6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
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Infineon 58200
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AUD 0.3392
Multiples of: 1000

            Sipmos      
FDC6561AN


MOSFET SSOT-6 N-CH 30V
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ON Semiconductor 58200
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AUD 0.3463
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSSOT - 6Reel       
SI4134DY-T1-E3


MOSFET 30V 14A 5.0W 14mohm @ 10V
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Vishay 57665
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AUD 0.4104
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel       
BSS83P H6327


Infineon Technologies MOSFET P-Ch SOT-23-3
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Infineon 55290
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AUD 0.0754
Multiples of: 5

330 mA60 V3 OhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3-Si1 Channel- 4.5 V2.38 nCEnhancementAec - Q101 
FDV304P


Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R
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ON Semiconductor 46560
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AUD 0.0381
Multiples of: 3000

460 mA25 V1.1 OhmsP - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V Enhancement  
SI3993CDV-T1-GE3


MOSFET 20V 2.2A DUAL PCH
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Vishay 5820
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AUD 0.2504
Multiples of: 3000

2.2 A- 30 V133 mOhmsP - Channel20 V- 3 V- 55 C+ 150 C1.15 WSmd/SmtTSOP - 6ReelSi  3.1 nCEnhancement Trenchfet
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