MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS308PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
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Infineon 61110
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AUD 0.084
Multiples of: 3000

            Optimos P3      
SIS434DN-T1-GE3


N-Channel 40 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 61110
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AUD 0.625
Multiples of: 3000

35 A40 V6.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel20 V40 nCEnhancement Trenchfet, Powerpak
STL7N80K5


MOSFET N-Ch 800V .95Ohm typ 3.6A Zener-protected
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STMicroelectronics 61110
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AUD 1.5198
Multiples of: 3000

3.6 A800 V1.2 OhmsN - Channel30 V4 V- 55 C+ 150 C42 WSmd/SmtPowerflat - 8 5X6Reel   13.4 nC   
SPA15N65C3XKSA1


MOSFET LOW POWER_LEGACY
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Infineon 61110
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AUD 4.4076
Multiples of: 1

                   
FDMS0302S


Fairchild Semiconductor MOSFET
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ON Semiconductor 61075
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AUD 0.9147
Multiples of: 1

29 A30 V1.5 mOhmsN - Channel 1.7 V- 55 C+ 150 C1.5 WSmd/SmtPOWER56 - 8ReelSi1 Channel+/- 20 V78 nCEnhancement Powertrench Syncfet
SI1902DL-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 660mA (Ta) 270mW (Ta) Surface Mount SC-70-6
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Vishay 60721
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AUD 0.261
Multiples of: 1

700 mA20 V385 mOhmsN - Channel 1.5 V- 55 C+ 150 C300 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V1.2 nCEnhancement  
FDG6335N


Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W; SC70-6
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ON Semiconductor 60494
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AUD 0.2668
Multiples of: 1

            Powertrench®      
IPD30N06S2L23ATMA3


Infineon Technologies MOSFET
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Infineon 60310
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AUD 0.6994
Multiples of: 1

30 A55 V15.9 mOhmsN - Channel 1.6 V- 55 C+ 175 C100 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V33 nCEnhancementAec - Q101 
DMT10H015LCG-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 60206
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AUD 0.6462
Multiples of: 1

          V - DFN3333 - 8Cut TapeSi      
DMP56D0UFB-7


Diodes Incorporated MOSFET P-CH ENHANCEMENT 6Ohm -50V -200mA
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Diodes Incorporated 2735
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AUD 0.0881
Multiples of: 5

- 200 mA- 50 V6 OhmsP - Channel - 1.2 V- 55 C+ 150 C425 mWSmd/SmtX1 - DFN1006 - 3Reel- +/- 8 V580 pCEnhancement  
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