MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138


SOT-23 MOSFETs ROHS
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JSMSEMI 58248
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AUD 0.0099
Multiples of: 50

                   
BSS138K


MOSFET 50V NCh Logic Level Enhancement Mode FET
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ON Semiconductor 58200
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AUD 0.0522
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
DMP2240UWQ-7


Diodes Incorporated MOSFET P-Ch Enh Mode FET VDSS -20V -12VGSS
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Diodes Incorporated 58200
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AUD 0.1431
Multiples of: 3000

- 1.5 A- 20 V134 mOhmsP - Channel - 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel12 V EnhancementAec - Q101 
MCH6422-TL-E


MCH6422-TL-E
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ON Semiconductor 58200
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AUD 0.2032
Multiples of: 1

                   
SI3993CDV-T1-GE3


MOSFET 20V 2.2A DUAL PCH
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Vishay 58200
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AUD 0.3413
Multiples of: 3000

2.2 A- 30 V133 mOhmsP - Channel20 V- 3 V- 55 C+ 150 C1.15 WSmd/SmtTSOP - 6ReelSi  3.1 nCEnhancement Trenchfet
SQJ457EP-T1_GE3


MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
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Vishay 58200
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AUD 0.5974
Multiples of: 3000

- 36 A- 60 V21 mOhmsP - Channel - 2.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V100 nCEnhancementAec - Q101Trenchfet
STD15P6F6AG


null 10A 160mO@5A,10V 35W P Channel TO-252 MOSFETs ROHS
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STMicroelectronics 58200
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AUD 0.6393
Multiples of: 2500

- 10 A- 60 V0.13 OhmsP - Channel - 2 V-+ 175 C35 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V6.4 nCEnhancementAec - Q101Stripfet
DMN67D8L-7


60V 210mA 340mW 5O@10V,500mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 52380
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AUD 0.0317
Multiples of: 3000

210 mA60 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C340 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 30 V821 pCEnhancement  
SI2399DS-T1-GE3


Vishay Semiconductors MOSFET -20V -6A 2.5W
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Vishay 43650
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AUD 0.2599
Multiples of: 3000

6 A20 V34 mOhmsP - Channel 600 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V10 nCEnhancement Trenchfet
DMN62D0U-7


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 4976
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AUD 0.0581
Multiples of: 10

380 mA60 V2 OhmsN - Channel 500 mV- 55 C+ 150 C590 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V0.5 nCEnhancement  
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