MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002-TP


N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount SOT-23
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) 2508420
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AUD 0.0171
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel    200 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel     
2N7002ET1G


N-Channel 60 V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 117893
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AUD 0.0304
Multiples of: 20

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
IRFS4410ZTRLPBF


MOSFET N Trench 100V 97A 4V @ 150uA 9 mΩ @ 58A,10V TO-263-2 RoHS
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Infineon 58976
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AUD 1.6045
Multiples of: 800

97 A100 V9 mOhmsN - Channel 4 V + 175 C230 WSmd/SmtD2PAKReelSi1 Channel 120 nC   
BUK7M22-80EX


MOSFET BUK7M22-80E/MLFPAK/REEL 7" Q1/
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Nexperia 58850
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AUD 0.4794
Multiples of: 1

37 A80 V22 mOhmsN - Channel 2.4 V- 55 C+ 175 C75 WSMD/SMTLFPAK - 33 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V23.9 nCEnhancement  
IRLML5103TRPBF


MOSFET P Trench 30V 760mA 1V @ 250uA 600 mΩ @ 600mA,10V SOT-23 (SOT-23-3) RoHS
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Infineon 58538
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AUD 0.1133
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
IRLR2705TRPBF


Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
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Infineon 58212
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AUD 0.3809
Multiples of: 1

28 A55 V65 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSmd/SmtDPAKReelSi1 Channel16 V16.7 nCEnhancement  
BSS215PH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
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Infineon 58200
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AUD 0.1142
Multiples of: 3000

            Optimos P2      
MCH6422-TL-E


MCH6422-TL-E
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ON Semiconductor 58200
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AUD 0.2282
Multiples of: 1

                   
AO4435


30V 10.5A 13m@10V,10.5A 3.1W 1.5V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS
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ElecSuper 56507
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AUD 0.1048
Multiples of: 5

                   
BSS806NH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
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Infineon 42388
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AUD 0.1034
Multiples of: 1

            Optimos 2      
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