MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84-7-F


50V 130mA 300mW 10O@5V,100mA P Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 181060
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AUD 0.0387
Multiples of: 10

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
AO4407A


SOP-8 MOSFETs ROHS
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Youtai 84370
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AUD 0.0981
Multiples of: 5

                   
ZXMN3A14FTA


N-Channel 30 V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 62603
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AUD 0.3724
Multiples of: 1

3.9 A30 V95 mOhmsN - channel20 V - 55 C+ 150 C1 WSmd/smtSOT - 23 - 3ReelSi1 Channel20 V Enhancement  
BUK7M22-80EX


MOSFET BUK7M22-80E/MLFPAK/REEL 7" Q1/
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Nexperia 62341
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AUD 0.4887
Multiples of: 1

37 A80 V22 mOhmsN - Channel 2.4 V- 55 C+ 175 C75 WSMD/SMTLFPAK - 33 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V23.9 nCEnhancement  
TP0610K-T1-GE3


P-Channel 60 V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 61381
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AUD 0.0701
Multiples of: 10

   P - Channel  - 55 C+ 150 C  TO - 236Reel       
NTR5103NT1G


MOSFET NFET SOT23 60V 310MA 2.5
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ON Semiconductor 61110
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AUD 0.0348
Multiples of: 3000

310 mA60 V2.5 OhmsN - Channel 1.9 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V810 pCEnhancement  
AON7400A


MOSFET N Trench 30V 15A 2.5V @ 250uA 7.5 mΩ @ 20A,10V DFN-8 RoHS
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Alpha & Omega 60343
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AUD 0.1447
Multiples of: 5

                   
FDN340P


SOT-23 MOSFETs ROHS
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Youtai 55542
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AUD 0.0322
Multiples of: 20

                   
BSC010N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
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Infineon 47796
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AUD 1.3923
Multiples of: 1

100 A40 V1 mOhmsN - Channel 1.2 V- 55 C+ 150 C139 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V133 nCEnhancement OptiMOS
WNM6002-3/TR


MOSFET N Channel 60V 300mA 2V @ 250uA 2O @ 370mA,10V SOT-323 RoHS
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Will Semiconductor 46715
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AUD 0.0357
Multiples of: 20

                   
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