MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
40P30


40V 30A 25mΩ 2.5V P Channel TO-252 MOSFETs ROHS
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HL 67710
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AUD 0.1136
Multiples of: 5

                   
SI2302


MOSFET N Trench 20V 2.1A 1.2V @ 50uA 72 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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Hottech 67628
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AUD 0.0357
Multiples of: 20

                   
PMV16XNR


N-Channel 20 V 6.8A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
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Nexperia 67526
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AUD 0.1302
Multiples of: 5

8.6 A20 V20 mOhmsN - Channel12 V400 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V13.4 nCEnhancement  
LBSS123LT1G


MOSFET N Trench 100V 170mA 2V @ 1mA 6 Ω @ 100mA,10V SOT-23 (SOT-23-3) RoHS
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Leshan 67085
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AUD 0.0212
Multiples of: 20

                   
SI2323DS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 67027
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AUD 0.0754
Multiples of: 5

                   
IPA70R600P7SXKSA1


MOSFET
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Infineon 66593
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AUD 0.6144
Multiples of: 1

8.5 A700 V490 mOhmsN - Channel 2.5 V- 40 C+ 150 C24.9 WThrough HoleTO - 220FP - 3TubeSi1 Channel16 V10.5 nCEnhancement Coolmos
AONR21357


MOSFET DFN_3x3mm RoHS
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Alpha & Omega 66314
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AUD 0.2671
Multiples of: 5

                   
BSS123.215


Transistor: N-MOSFET; unipolar; 100V; 150mA; 250mW; SOT23
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Nexperia 66095
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AUD 0.094
Multiples of: 1

                   
FS3401M A19T


30V 4.1A 42mΩ@10V,4.2A 1400mW 2V@250uA P Channel 954pF@15V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 65960
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AUD 0.0253
Multiples of: 20

                   
BSL308CH6327XTSA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 65569
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AUD 0.3394
Multiples of: 1

2 A , 2.3 A30 V130 mOhms , 93 mOhmsN - Channel, P - Channel 2 v , 1.2 V- 55 C+ 150 C0.5 WSmd/SmtTSOP - 6Cut TapeSi2 Channel20 V- 1.2 nC , 650 pCEnhancement  
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