MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJ2101


MOSFET P Trench 20V 1.4A 700mV @ 250uA 100 mΩ @ 1A,4.5V SOT-323 (SC-70) RoHS
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Changjing Electronics Technology 82925
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AUD 0.0449
Multiples of: 10

                   
FS3401M A19T


30V 4.1A 42mΩ@10V,4.2A 1400mW 2V@250uA P Channel 954pF@15V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 68695
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AUD 0.0347
Multiples of: 20

                   
Hot IRF7853TRPBF


MOSFET N Trench 100V 8.3A 4.9V @ 100uA 18 mΩ @ 8.3A,10V SOIC-8_150mil RoHS
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Infineon 65960
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AUD 0.9142
Multiples of: 4000

8.3 A100 V18 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V28 nC   
CR4N65A4K


650V 4A 2.4Ω@10V,2A 75W 4V@250uA 2.1pF@25V N Channel 564pF@25V 15.8nC@10V +150℃@(Tj) TO-252 MOSFETs ROHS
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CRMICRO 65785
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AUD 0.1926
Multiples of: 5

                   
BSL308CH6327XTSA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 65651
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AUD 0.3267
Multiples of: 1

2 A , 2.3 A30 V130 mOhms , 93 mOhmsN - Channel, P - Channel 2 v , 1.2 V- 55 C+ 150 C0.5 WSmd/SmtTSOP - 6Cut TapeSi2 Channel20 V- 1.2 nC , 650 pCEnhancement  
PSMN5R6-60YLX


MOSFET PSMN5R6-60YL/LFPAK/REEL 7" Q1/
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Nexperia 65538
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AUD 0.7207
Multiples of: 1

100 A60 V5.6 mOhmsN - Channel 1.4 V- 55 C+ 175 C167 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V66.8 nCEnhancement  
PSMN4R0-30YL,115


MOSFET <=30V N CH TRENCHFET
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Nexperia 65310
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AUD 1.0361
Multiples of: 1

   n - channel  - 55 C+ 175 C smd/smtSOT - 669 (LFPAK)Reel       
2SJ646-TL-E


GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor 64351
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AUD 0.433
Multiples of: 1

                   
BSS84AKVL


MOSFET BSS84AK/TO-236AB/REEL 11" Q3/T
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Nexperia 53696
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AUD 0.0394
Multiples of: 1

         Smd/SmtSOT - 666 - 6Cut TapeSi      
NCE3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 55 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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NCE Power 1629
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AUD 0.1092
Multiples of: 10

                   
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