MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2337DS-T1-BE3


MOSFET P-CHANNEL 80-V (D-S)
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Vishay 69394
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AUD 0.805
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2.2 A80 V270 mOhmsP - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V7 nCEnhancement  
CPH3350-TL-W


ON Semiconductor MOSFET PCH 1.8V DRIVE SERIES
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ON Semiconductor 69280
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AUD 0.2885
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- 3 A- 20 V83 mOhmsP - Channel     Smd/SmtSOT - 23 - 3ReelSi1 Channel     
BSS138IXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 68997
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AUD 0.0575
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230 mA60 V3.5 OhmsN - Channel 1.4 V- 50 C+ 150 C360 mWSMD/SMT Cut Tape , ReelSi1 Channel- 20 V , + 20 V1 nCEnhancement  
BSL308CH6327XTSA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 68538
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AUD 0.284
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2 A , 2.3 A30 V130 mOhms , 93 mOhmsN - Channel, P - Channel 2 v , 1.2 V- 55 C+ 150 C0.5 WSmd/SmtTSOP - 6Cut TapeSi2 Channel20 V- 1.2 nC , 650 pCEnhancement  
NTZD3152PT1G


MOSFET -20V -430mA Dual P-Channel
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ON Semiconductor 68474
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AUD 0.0903
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430 mA20 V2 Ohms , 2 OhmsP - Channel 450 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel1.8 V1.7 nC , 1.7 nCEnhancement  
BSP297H6327XTSA1


Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
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Infineon 68186
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AUD 0.4285
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            Sipmos      
SCH1330-TL-H


Trans MOSFET P-CH 20V 1.5A 6-Pin Case SCH T/R
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ON Semiconductor 67900
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AUD 0.191
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1.5 A- 20 V241 mOhmsp - channel  - 55 C+ 150 C1 Wsmd/smtSCH - 6Reel 1 channel10 V    
DMP2075UFDB-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 65033
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AUD 0.2085
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3.8 A20 V53 mOhmsP - Channel 350 mV- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - 6Cut TapeSi2 Channel- 4.5 V8.8 nCEnhancement  
SSM3J332R,LF


MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS
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Toshiba 48034
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AUD 0.0375
Multiples of: 10

6 A30 V144 mOhmsP - Channel 500 mV + 150 C1 WSmd/SmtSOT - 23FReelSi1 Channel- 1.8 V8.2 nCEnhancement  
NTR4003NT3G


ON Semiconductor MOSFET NFET 30V .56A 1500M
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ON Semiconductor 12133
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AUD 0.0697
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500 mA30 V1 OhmsN - Channel20 V800 mV- 55 C+ 150 C690 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel4 V1.15 nCEnhancement  
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