MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS315PH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
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Infineon 110580
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AUD 0.0935
Multiples of: 3000

            Optimos P2      
2N7002E-T1-GE3


MOSFET 60V 240mA 0.35W 3.0ohm @ 10V
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Vishay 66930
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AUD 0.1845
Multiples of: 3000

240 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V0.6 nCEnhancement  
FQD7P06TM


MOSFET 60V P-Channel QFET
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ON Semiconductor 66883
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AUD 0.4714
Multiples of: 1

5.4 A60 V450 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252ReelSi1 Channel25 V Enhancement  
BSS84AKV,115


Mosfet Array 2 P-Channel (Dual) 50V 170mA 500mW Surface Mount SOT-666
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Nexperia 65960
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AUD 0.1018
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170 mA50 V7.5 OhmsP - Channel    330 mWSmd/SmtSOT - 666ReelSi1 Channel 350 pC   
STB45N65M5


MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh V MOS
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STMicroelectronics 65960
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AUD 7.1726
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35 A650 V78 mOhmsN - Channel    208 WThrough HoleD2PAKReelSi1 Channel    Mdmesh
FDMA3028N


MOSFET 30V Dual N-Channel
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ON Semiconductor 65578
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AUD 0.5468
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3.8 A30 V123 mOhmsn - channel  - 55 C+ 150 C1.5 Wsmd/smtMICRO - FET 2X2Reelsi2 channel  enhancement powertrench
2SJ646-TL-E


GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor 65321
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AUD 0.3859
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BSL606SN H6327


Infineon Technologies MOSFET N-Ch 60V 4.5A TSOP-6
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Infineon 65129
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AUD 0.3578
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4.5 A60 V60 mOhmsN - Channel 1.3 V- 55 C+ 150 C2 WSmd/SmtPG - TSOP - 6ReelSi1 Channel10 V3.7 nCEnhancement  
DMN1019USN-13


Diodes Incorporated MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
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Diodes Incorporated 64576
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AUD 0.1729
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9.3 A12 V41 mOhmsN - Channel 0.53 V- 55 C+ 150 C1.2 WSmd/SmtSC - 59 - 3ReelSi1 Channel8 V50.6 nCEnhancement Dmn10
FDC8878


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 2653
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AUD 0.8502
Multiples of: 1

8 A30 V16 mOhmsN - Channel  - 55 C+ 150 C800 mWSmd/SmtSSOT - 6ReelSi1 Channel20 V   Powertrench
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