MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SCH1330-TL-H


Trans MOSFET P-CH 20V 1.5A 6-Pin Case SCH T/R
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ON Semiconductor 106700
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AUD 0.191
Multiples of: 1

1.5 A- 20 V241 mOhmsp - channel  - 55 C+ 150 C1 Wsmd/smtSCH - 6Reel 1 channel10 V    
BSZ110N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
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Infineon 92150
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AUD 0.8655
Multiples of: 5000

            Optimos 5      
FDMS7678


MOSFET 30V/20V N-Ch PowerTrench SyncFET
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ON Semiconductor 68493
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AUD 0.4925
Multiples of: 1

17.5 A30 V5.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C41 WSMD/SMTPOWER - 56 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V39 nCEnhancement PowerTrench
DMC31D5UDJ-7B


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 67900
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AUD 0.2716
Multiples of: 10000

220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
DMN3032LFDBQ-13


MOSFET Dual N-Ch Enh FET 30V 20Vgss 1.0W
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Diodes Incorporated 67900
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AUD 0.3135
Multiples of: 1

         Smd/SmtU - DFN2020 - B - 6Cut TapeSi    Aec - Q101 
CRSS042N10N


MOSFET N Trench 100V 120A (Tc) 4V @ 250uA 4.2 mΩ @ 50A,10V T0-263 RoHS
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CRMICRO 67602
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AUD 0.8088
Multiples of: 1

                   
DMN2011UFDE-7


Diodes Incorporated MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
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Diodes Incorporated 67459
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AUD 0.4449
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11.7 A20 V15 mOhmsN - Channel 1 V- 55 C+ 150 C1.97 WSMD/SMTDFN - 2020 - 6Reel , Cut TapeSi1 Channel- 12 V , 12 V56 nCEnhancement  
AO3418


MOSFET N Trench 30V 3.8A 1.8V @ 250uA 60 mΩ @ 3.8A,10V SOT-23-3L RoHS
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Alpha & Omega 66629
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AUD 0.1149
Multiples of: 5

                   
PJM10H01PSA


100V 1A 650mΩ@10V,1A 500mW P Channel SOT-23 MOSFETs ROHS
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Pingjingsemi 63244
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AUD 0.0679
Multiples of: 20

                   
Si2301CDS-T1-E3


MOSFET 20V 3.1A 1.6W 112mohm @ 4.5V
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Vishay 1079
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AUD 0.2167
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
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