MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2305


12V 4.1A 90mΩ@1.8V,2A 1.3W P Channel SOT-23-3 MOSFETs ROHS
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GOODWORK 72653
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AUD 0.0363
Multiples of: 20

                   
SI8817DB-T2-E1


MOSFET -20V 76mOhm@4.5V 2.9A P-Ch G-III
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Vishay 72248
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AUD 0.2355
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT 0.8 x 0.8Reel      P - Channel Gen Iii
MCH3476-TL-W


MOSFET NCH 1.8V DRIVE SERIE
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ON Semiconductor 72168
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AUD 0.1645
Multiples of: 1

2 A20 V93 mOhmsn - channel 400 mV + 150 C800 mWsmd/smtSOT - 323 - 3Cut Tapesi1 channel12 V1.8 nCenhancement  
NX2301P,215


MOSFET P-CH -20 V -2 A
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Nexperia 72148
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AUD 0.0694
Multiples of: 5

2 A20 V120 mOhmsP - Channel 500 mV- 55 C+ 150 C710 mWSmd/SmtSOT - 23ReelSi1 Channel- 4.5 V4.5 nCEnhancement  
CMUDM7005 TR


MOSFET SMD- Small Signal N-Channel Mosfet
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Central Semiconductor 72024
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AUD 0.5462
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650 mA20 V140 mOhmsN - Channel 500 mV- 65 C+ 150 C300 mWSmd/SmtSOT - 523ReelSi1 Channel8 V1.58 nCEnhancement Ultramini
SI4948BEY-T1-E3


MOSFET 60V 3.1A 0.12Ohm
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Vishay 71545
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AUD 0.7951
Multiples of: 1

3.1 A60 V120 mOhmsP - Channel 1 V- 55 C+ 175 C2.4 WSMD/SMTSOIC - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V22 nCEnhancement TrenchFET
SI2302


MOSFET SOT23 RoHS
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TWGMC 71275
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AUD 0.0183
Multiples of: 20

                   
BSC052N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 17A; 28W; PG-TDSON-8
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Infineon 70810
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AUD 0.3652
Multiples of: 1

            Optimos      
SI2302CDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 70698
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AUD 0.2027
Multiples of: 1

2.9 A20 V57 mOhmsN - Channel 850 mV- 55 C+ 150 C860 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.5 nCEnhancement  
SUD50P08-25L-E3


Vishay Semiconductors MOSFET 80V 50A 136W 25.2mohm 10V
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Vishay 1940
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AUD 1.3001
Multiples of: 1

12.5 A- 80 V25.2 mOhmsP - Channel 1 V- 55 C+ 175 C8.3 WSmd/SmtDPAK - 3ReelSi1 Channel20 V105 nCEnhancement Trenchfet
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