MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMN2F34FHTA


MOSFET 20V N-Channel Enhance. Mode MOSFET
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Diodes Incorporated 71726
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AUD 0.1658
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4 A20 V60 mOhmsN - Channel 500 mV- 55 C+ 150 C950 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V2.8 nCEnhancement  
NX7002AKW,115


NXP Semiconductors MOSFET 60 V, single N-chan Trench MOSFET
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Nexperia 71563
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AUD 0.0361
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170 mA60 V3 OhmsN - Channel 1.6 V- 55 C+ 150 C1.06 WSmd/SmtSC - 70 - 3ReelSi1 Channel10 V0.33 nCEnhancement  
DMN2011UFDE-7


Diodes Incorporated MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
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Diodes Incorporated 71506
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AUD 0.3382
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11.7 A20 V15 mOhmsN - Channel 1 V- 55 C+ 150 C1.97 WSmd/SmtUDFN2020 - 6ReelSi1 Channel12 V56 nCEnhancement  
SI7322DN-T1-E3


Vishay Semiconductors MOSFET 100V 18A 52W 58mohm 10V
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Vishay 71380
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AUD 0.9916
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5.5 A100 V58 mOhmsN - Channel20 V - 55 C+ 150 C3.8 WSmd/SmtPOWERPAK - 1212 - 8ReelSi   Enhancement Trenchfet
6HP04CH-TL-W


ON Semiconductor MOSFET
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ON Semiconductor 71317
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AUD 0.1776
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- 370 mA- 60 V4.2 Ohmsp - channel     smd/smtSOT - 23 - 3Reelsi1 channel     
BSZ075N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
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Infineon 71094
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AUD 1.0779
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            Optimos 5      
FDMS7678


MOSFET 30V/20V N-Ch PowerTrench SyncFET
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ON Semiconductor 70924
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AUD 0.4992
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17.5 A30 V5.5 mOhmsN - Channel  - 55 C+ 150 C41 WSmd/SmtPOWER 56ReelSi1 Channel20 V   Powertrench
ZXMS6004DN8-13


MOSFET Dual 60V N-Ch FET 500mOhm 1.3A 120mJ
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Diodes Incorporated 70688
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AUD 0.5172
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1.2 A , 1 A60 v , 60 V600 mOhms , 600 mOhmsN - Channel -- 40 C+ 150 C1.21 WSmd/SmtSO - 8ReelSi2 Channel- Enhancement Intellifet
FQP14N30


MOSFET 300V N-Channel QFET
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ON Semiconductor 70175
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AUD 1.7351
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9.1 A300 V290 mOhmsn - channel  - 55 C+ 150 C147 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement qfet
LBSS123LT1G


MOSFET N Trench 100V 170mA 2V @ 1mA 6 Ω @ 100mA,10V SOT-23 (SOT-23-3) RoHS
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Leshan 67337
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AUD 0.0187
Multiples of: 20

                   
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