MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138


MOSFET SOT-23 N-CH LOGIC
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ON Semiconductor 2915820
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AUD 0.045
Multiples of: 3000

220 mA50 V3.5 OhmsN - Channel20 V - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
50N03


30V 50A 7.6m 2.5V 1PCSNChannel TO-252 MOSFETs ROHS
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HL 61852
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AUD 0.0754
Multiples of: 5

                   
SI2319


SOT-23 MOSFETs ROHS
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HXY MOS 61595
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AUD 0.0515
Multiples of: 10

                   
HYG053N10NS1C2


100V 95A 83.3W 4.6mΩ@10V,20A 3V@250uA 153pF@25V N Channel 3744pF@25V 73nC@10V -55℃~+175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 61508
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AUD 0.465
Multiples of: 1

                   
DMN2011UFDE-7


Diodes Incorporated MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
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Diodes Incorporated 61461
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AUD 0.4636
Multiples of: 1

11.7 A20 V15 mOhmsN - Channel 1 V- 55 C+ 150 C1.97 WSMD/SMTDFN - 2020 - 6Reel , Cut TapeSi1 Channel- 12 V , 12 V56 nCEnhancement  
PMV65XPEAR


P-Channel 20 V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB
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Nexperia 61352
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AUD 0.098
Multiples of: 5

3.3 A20 V67 mOhmsP - Channel 750 mV- 55 C+ 150 C890 mWSmd/SmtTO - 236AB - 3Cut TapeSi1 Channel- 4.5 V9 nCEnhancement  
IRL540NSTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
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Infineon 61304
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AUD 0.9464
Multiples of: 800

36 A100 V63 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel16 V49.3 nC   
CPH3350-TL-W


ON Semiconductor MOSFET PCH 1.8V DRIVE SERIES
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ON Semiconductor 61132
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AUD 0.1793
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- 3 A- 20 V83 mOhmsP - Channel     Smd/SmtSOT - 23 - 3ReelSi1 Channel     
SPA15N65C3XKSA1


MOSFET LOW POWER_LEGACY
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Infineon 61110
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AUD 4.2188
Multiples of: 1

                   
IRLZ44NPBF


MOSFET N Trench 55V 47A 2V @ 250uA 22 mΩ @ 25A,10V TO-220 (TO-220-3) RoHS
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Infineon 60984
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AUD 0.6993
Multiples of: 1

41 A55 V35 mOhmsN - Channel    83 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V32 nC   
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