MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RUM002N02T2L


ROHM Semiconductor MOSFET SW MOSFET SMLL SIG N-CH 20V .2A
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ROHM 60722
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AUD 0.0287
Multiples of: 20

200 mA20 V1.2 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel2.5 V Enhancement  
SI1902DL-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 660mA (Ta) 270mW (Ta) Surface Mount SC-70-6
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Vishay 60721
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AUD 0.261
Multiples of: 1

700 mA20 V385 mOhmsN - Channel 1.5 V- 55 C+ 150 C300 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V1.2 nCEnhancement  
STD15NF10T4


Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK
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STMicroelectronics 60625
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AUD 0.4694
Multiples of: 2500

            Supermesh      
DMT10H015LCG-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 60206
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AUD 0.6462
Multiples of: 1

          V - DFN3333 - 8Cut TapeSi      
2N7002BKS


SOT-363 MOSFETs ROHS
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TECH PUBLIC 60098
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AUD 0.0336
Multiples of: 10

                   
RQ3E100BNTB


MOSFET 4.5V Drive Nch MOSFET
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ROHM 60078
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AUD 0.2008
Multiples of: 1

13.5 A30 V7.7 mOhmsn - channel 1 V- 55 C+ 150 C15 Wsmd/smtH SMT - 8Reelsi1 channel+/- 20 V22 nCenhancement  
SQ4064EY-T1_BE3


MOSFET N-CHANNEL 60V
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Vishay 59867
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AUD 0.7981
Multiples of: 1

12 A60 V16.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C6.8 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V29 nCEnhancement TrenchFET
SI3457CDV-T1-E3


MOSFET 30V 5.1A 3.0W 74mohm @ 10V
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Vishay 59065
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AUD 0.3056
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
DMN6075S-7


MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
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Diodes Incorporated 57647
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AUD 0.0776
Multiples of: 5

2.5 A60 V85 mOhmsN - Channel 1 V- 55 C+ 150 C1.15 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V12.3 nCEnhancement  
IRFB4410PBF


MOSFET N Trench 100V 88A 4V @ 150uA 10 mΩ @ 58A,10V TO-220 (TO-220-3) RoHS
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Infineon 51439
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AUD 1.3143
Multiples of: 1

            Hexfet®      
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