MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002LT1G


MOSFET 60V 115mA N-Channel
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ON Semiconductor 61139
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AUD 0.0243
Multiples of: 1

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
NX3008PBK,215


P-Channel 30 V 230mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB
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Nexperia 61110
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AUD 0.0382
Multiples of: 3000

230 mA30 V4.1 OhmsP - Channel 600 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V0.55 nCEnhancement  
SPA15N65C3XKSA1


MOSFET LOW POWER_LEGACY
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Infineon 61110
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AUD 4.4076
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FDMS0302S


Fairchild Semiconductor MOSFET
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ON Semiconductor 60830
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AUD 0.8731
Multiples of: 1

29 A30 V1.5 mOhmsN - Channel 1.7 V- 55 C+ 150 C1.5 WSmd/SmtPOWER56 - 8ReelSi1 Channel+/- 20 V78 nCEnhancement Powertrench Syncfet
2N7002T


60V 115mA 3Ω@10V 2.5V null SOT-523 MOSFETs ROHS
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HXY MOS 60780
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AUD 0.024
Multiples of: 20

                   
SI1902DL-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 660mA (Ta) 270mW (Ta) Surface Mount SC-70-6
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Vishay 60721
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AUD 0.261
Multiples of: 1

700 mA20 V385 mOhmsN - Channel 1.5 V- 55 C+ 150 C300 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V1.2 nCEnhancement  
AO4459


MOSFET P Trench 30V 6.5A 2.5V @ 250uA 46 mΩ @ 6.5A,10V SOP-8_150mil RoHS
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Alpha & Omega 60431
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AUD 0.13
Multiples of: 5

                   
FDC6561AN


MOSFET SSOT-6 N-CH 30V
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ON Semiconductor 58200
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AUD 0.3608
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSSOT - 6Reel       
FDN342P


Transistor: P-MOSFET; unipolar; -20V; -2A; 0.5W; SuperSOT-3
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ON Semiconductor 494
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AUD 0.3278
Multiples of: 1

            Powertrench®      
DMN67D8L-7


60V 210mA 340mW 5O@10V,500mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 0
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AUD 0.0416
Multiples of: 3000

210 mA60 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C340 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 30 V821 pCEnhancement  
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