MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJ3400-ES


30V 6A 19m@10V,6.0A 1.4W 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper 55295
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AUD 0.0268
Multiples of: 20

                   
BSS138WH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
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Infineon 55290
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AUD 0.0524
Multiples of: 3000

            Sipmos      
NTR1P02LT1G


MOSFET -20V -1.3A P-Channel
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ON Semiconductor 55290
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AUD 0.0839
Multiples of: 3000

1.3 A20 V350 mOhmsP - Channel 700 mV- 55 C+ 150 C400 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel2.5 V3.1 nCEnhancement  
2N7002V


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 55290
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AUD 0.1773
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 563F - 6Reel       
SI2308BDS-T1-GE3


MOSFET 60V Vds 20V Vgs SOT-23
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Vishay 55290
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AUD 0.248
Multiples of: 3000

2.3 A60 V156 mOhmsN - Channel 1 V- 55 C+ 150 C1.66 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.8 nCEnhancement Trenchfet
SI3437DV-T1-E3


MOSFET 150V 1.4A 3.2W 750 mohms @ 10V
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Vishay 55150
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AUD 0.5325
Multiples of: 1

1.4 A150 V750 mOhmsP - Channel 2 V- 55 C+ 150 C3.2 WSmd/SmtTSOP - 6ReelSi1 Channel- 10 V12.2 nCEnhancement Trenchfet
2N7002E-7-F


60V 250mA 3O@10V,250mA 370mW N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 37830
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AUD 0.0395
Multiples of: 3000

300 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V223 pCEnhancement  
DMN67D8LW-13


60V 240mA 320mW 5O@10V,500mA N Channel SOT-323-3 MOSFETs ROHS
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Diodes Incorporated 37106
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AUD 0.0454
Multiples of: 1

         Smd/SmtSOT - 323 - 3Cut TapeSi      
2N7002PW,115


MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET
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Nexperia 2599
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AUD 0.0384
Multiples of: 10

310 mA60 V1.6 OhmsN - Channel 1.1 V- 55 C+ 150 C310 mWSmd/SmtSOT - 323ReelSi1 Channel10 V0.6 nCEnhancement  
STU2N62K3


MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH
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STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 0.8215
Multiples of: 3000

2.2 A620 V3.6 Ohmsn - channel  - 55 C+ 150 C45 Wthrough holeIPAKTubesi1 channel30 V15 nC  mdmesh
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First...5152535455...

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