MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002L


Fairchild Semiconductor MOSFET
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ON Semiconductor 57923
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AUD 0.0448
Multiples of: 1

115 mA60 V7.5 OhmsN - Channel20 V1.81 V- 55 C+ 150 C200 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
APM4953


MOSFET 2 P Channel (Dual) 30V 4.9A 3V @ 250uA 55 mΩ @ 5.1A,10V SOP-8_150mil RoHS
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Hottech 57832
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AUD 0.0945
Multiples of: 5

                   
SI2301


MOSFET SOT23 RoHS
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TWGMC 57659
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AUD 0.0251
Multiples of: 20

                   
RE1C002UNTCL


ROHM Semiconductor MOSFET
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ROHM 57462
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AUD 0.0248
Multiples of: 20

200 mA20 V1.2 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 416FL - 3ReelSi1 Channel2.5 V Enhancement  
NTMFS4C032NT1G


MOSFET TRENCH 6 30V NCH
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ON Semiconductor 57416
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AUD 0.402
Multiples of: 1

         smd/smtSO - FL - 8Cut Tapesi      
SSM3K56ACT,L3F


MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V
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Toshiba 57329
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AUD 0.088
Multiples of: 1

1.4 A20 V840 mOhmsN - Channel 400 mV- 55 C+ 150 C500 mWSmd/SmtCST - 3ReelSi1 Channel+/- 8 V1 nCEnhancement  
SQJ951EP-T1_BE3


MOSFET DUAL P-CHANNEL 30V
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Vishay 56934
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AUD 1.1314
Multiples of: 1

30 A30 V14 mOhmsP - Channel 2.5 V- 55 C+ 175 C56 WSMD/SMTPOWERPAK - SO - 8 - 4Trenchfet , Cut Tape , ReelSi2 Channel- 20 V , + 20 V50 nCEnhancement TrenchFET
HSS2N7002K


MOSFET N Channel 60V 0.3A 2.5V @ 250uA 2O @ 0.2A,10V SOT-23-3 RoHS
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HUASHUO 56914
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AUD 0.0154
Multiples of: 50

                   
SPD18P06PGBTMA1


MOSFET P-Ch -60V -18.6A DPAK-2
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Infineon 56796
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AUD 0.6912
Multiples of: 1

18.6 A60 V100 mOhmsP - Channel 4 V- 55 C+ 175 C80 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V33 nCEnhancement  
BSS123


100V 170mA 6Ω@10V 0.35W N Channel SOT-23 MOSFETs ROHS
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HXY MOS 54281
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AUD 0.0165
Multiples of: 20

                   
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