MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3400


MOSFET SOT23 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

TWGMC 56085
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AUD 0.0368
Multiples of: 20

                   
AP4606C


1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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Quan Li 55891
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AUD 0.1094
Multiples of: 10

                   
HYG015N03LS1C2


PDFN-8L(5x6) MOSFETs ROHS
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HuaYi 55673
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AUD 0.3471
Multiples of: 5

                   
AP4580


2 N-Channel&2 P-Channel(fullBridge) SOT-23-8L MOSFETs ROHS
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Quan Li 55474
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AUD 0.1402
Multiples of: 10

                   
BSS7728NH6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
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Infineon 55290
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AUD 0.0818
Multiples of: 1

            Sipmos      
2N7002DW


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 55290
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AUD 0.0914
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSC - 70 - 6ReelSi2 Channel20 V Enhancement  
DMP21D0UFD-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K
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Diodes Incorporated 55290
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AUD 0.1265
Multiples of: 3000

1.14 A20 V1.3 OhmsP - Channel 1.2 V- 55 C+ 150 C930 mWSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel8 V1.5 nCEnhancement  
SI1553CDL-T1-GE3


MOSFET -20V Vds 12V Vgs SC70-6 N&P PAIR
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Vishay 55290
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AUD 0.2677
Multiples of: 3000

70 mA , 50 mA20 V390 mOhms , 850 mOhmsN And P - Channel 600 mV , 1.5 V- 55 C+ 150 C0.34 WSmd/SmtSC - 70ReelSi2 Channel12 V1.8 nC , 3 nCEnhancement Trenchfet
FDG311N


MOSFET SC70-6 N-CH 20V
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ON Semiconductor 55117
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AUD 0.3171
Multiples of: 1

1.9 A20 V115 mOhmsn - channel  - 55 C+ 150 C750 mWsmd/smtSC - 70 - 6Reelsi1 channel8 V enhancement powertrench
UMW1N60G


MOSFET N Trench 600V 1A (Tc) 4V @ 250uA 11 Ω @ 500mA,10V SOT-223 RoHS
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Youtai 53126
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AUD 0.0845
Multiples of: 5

                   
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