MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP3003


30V 1.2W 19mΩ@10V,4.2A 1.3V@250uA 1PCSN-Channel&1PCSP-Channel SOT-23-6 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li 52923
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AUD 0.1317
Multiples of: 10

                   
SI9407BDY-T1-E3


MOSFET 60V 4.7A 5.0W 120mohm @ 10V
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Vishay 52732
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AUD 0.7716
Multiples of: 1

4.7 A60 V100 mOhmsP - Channel 1 V- 55 C+ 150 C5 WSmd/SmtSO - 8ReelSi1 Channel20 V14.5 nCEnhancement Trenchfet
SI7114ADN-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
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Vishay 52704
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AUD 0.6043
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
BSS169H6327XTSA1


Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
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Infineon 52380
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AUD 0.1552
Multiples of: 1

            Sipmos      
FDN5630


Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
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ON Semiconductor 52380
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AUD 0.1911
Multiples of: 3000

1.7 A60 V73 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSMD/SMTSSOT - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V10 nCEnhancement PowerTrench
SI1480DH-T1-BE3


N-Channel 100V 2.1A (Ta), 2.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 52379
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AUD 0.2341
Multiples of: 1

2.6 A100 V200 mOhmsN - Channel 3 V- 55 C+ 150 C2.8 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 20 V , 20 V5 nCEnhancement TrenchFET
AO3415


SOT-23 MOSFETs ROHS
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ALJ 51856
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AUD 0.0293
Multiples of: 20

                   
BSS138-G


MOSFET FET 50V 3.5 OHM
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ON Semiconductor 51642
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AUD 0.1961
Multiples of: 3000

           Cut Tape       
FDN340P


SOT-23 MOSFETs ROHS
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Youtai 51565
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AUD 0.031
Multiples of: 20

                   
AP4410


30V 15A 6.5mΩ@10V,10A 3W N Channel SOP-8 MOSFETs ROHS
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Quan Li 47908
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AUD 0.163
Multiples of: 5

                   
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