MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTS4173PT1G


ON Semiconductor MOSFET PFET SC70 30V TR
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ON Semiconductor 52380
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AUD 0.0938
Multiples of: 3000

- 1.3 A- 30 V165 mOhmsP - Channel12 V - 55 C+ 150 C350 mWSmd/SmtSC - 70 - 3Reel    Enhancement  
ZXMP3A13FTA


MOSFET 30V P-Chnl UMOS
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Diodes Incorporated 52380
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AUD 0.1556
Multiples of: 3000

1.6 A30 V210 mOhmsP - Channel 1 V- 55 C+ 150 C806 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.4 nCEnhancement  
FDN342P


Transistor: P-MOSFET; unipolar; -20V; -2A; 0.5W; SuperSOT-3
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ON Semiconductor 52380
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AUD 0.2034
Multiples of: 3000

            Powertrench®      
FDMA8051L


MOSFET 40V Single N-Channel PowerTrenchMOSFET
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ON Semiconductor 52380
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AUD 0.3017
Multiples of: 3000

10 A40 V18 mOhmsN - Channel 1.6 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6 2X2ReelSi1 Channel 14 nC  Powertrench
SQJ457EP-T1_GE3


MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
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Vishay 52380
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AUD 0.556
Multiples of: 3000

- 36 A- 60 V21 mOhmsP - Channel - 2.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V100 nCEnhancementAec - Q101Trenchfet
NTUD3170NZT5G


MOSFET 20V Trench N-Channel
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ON Semiconductor 52047
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AUD 0.1625
Multiples of: 1

220 mA20 V1.5 OhmsN - Channel 400 mV- 55 C+ 150 C125 mW (1/8 w)Smd/SmtSOT - 963ReelSi2 Channel4.5 V Enhancement  
DMN65D8LQ-13


MOSFET MOSFET BVDSS
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Diodes Incorporated 52027
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AUD 0.0367
Multiples of: 1

         Smd/SmtSOT - 23 - 3Cut TapeSi    Aec - Q101 
2N7002LT3G


MOSFET 60V 115mA N-Channel
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ON Semiconductor 51701
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AUD 0.0322
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
CJ3134K KF


MOSFET N Trench 20V 750mA 1.1V @ 250uA 380 mΩ @ 650mA,4.5V SOT-723 RoHS
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Changjing Electronics Technology 46191
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AUD 0.0272
Multiples of: 20

                   
BSS123W-7-F


N-Channel 100 V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323
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Diodes Incorporated 11640
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AUD 0.0647
Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C200 mW (1/5 w)Smd/SmtSOT - 323 - 3Cut TapeSi1 Channel20 V Enhancement  
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