MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4407


30V 12A 8m@10V,12.0A 3.1W 1.5V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS
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ElecSuper 48898
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AUD 0.1312
Multiples of: 1

                   
SI2333


MOSFET P Trench 12V 7.1A (Tc) 1V @ 250uA 35 mΩ @ 5.1A,4.5V SOT-23 RoHS
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Bourne 48770
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AUD 0.0505
Multiples of: 10

                   
ATM3401PSA


SOT-23 MOSFETs ROHS
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Agertech 48766
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AUD 0.0231
Multiples of: 20

                   
IRLL014TRPBF-BE3


MOSFET 60V N-CH MOSFET
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Vishay 48704
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AUD 0.619
Multiples of: 1

2.7 A60 V200 mOhmsN - Channel 2 V- 55 C+ 150 C3.1 WSMD/SMTSOT - 223 - 4Cut Tape , ReelSi1 Channel- 10 V , + 10 V8.4 nCEnhancement  
DMN63D8LDW-13


MOSFET 30V DUAL N-CH MOSFET
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Diodes Incorporated 48500
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AUD 0.0659
Multiples of: 10000

   N - Channel       ReelSi2 Channel     
2N7000-D26Z


MOSFET N Trench 60V 200mA 3V @ 1mA 5 Ω @ 500mA,10V TO-92-3L RoHS
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ON Semiconductor 48500
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AUD 0.1198
Multiples of: 2000

200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel20 V Enhancement  
IRFR9220TRPBF


P-Channel 200 V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 48500
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AUD 0.7046
Multiples of: 2000

3.6 A200 V1.5 OhmsP - Channel 2 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V20 nCEnhancement  
PJQ4403P_R2_00001


MOSFET /4403/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMP//PJ/DFN33338L-AS09/PJQ4403P-AS76/DFN33338L-AS01
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Panjit 48237
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AUD 0.3231
Multiples of: 1

35 A30 V15.5 mOhmsP - Channel 2.5 V- 55 C+ 150 C30 WSMD/SMTDFN3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
AO3415A


MOSFET P Trench 20V 5A 850mV @ 250uA 45 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Alpha & Omega 39246
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AUD 0.0868
Multiples of: 5

4 A  P    1.5 WSurface Mount      Enhancement  
BSC340N08NS3GATMA1


Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
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Infineon 8647
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AUD 0.4976
Multiples of: 1

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