MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
UM6K33NTN


ROHM Semiconductor MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 50740
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AUD 0.0919
Multiples of: 1

200 mA50 V1.6 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 363 - 6Tape And ReelSi2 Channel8 V Enhancement  
STN1NK80Z


Transistor: N-MOSFET; unipolar; 800V; 160mA; 2.5W; SOT223
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STMicroelectronics 50440
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AUD 0.2687
Multiples of: 4000

            Supermesh      
SI2325DS-T1-BE3


MOSFET P-CHANNEL 150-V (D-S)
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Vishay 50415
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AUD 0.5943
Multiples of: 1

530 mA150 V1.2 OhmsP - Channel 4.5 V- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V7.7 nCEnhancement  
PJC138K_R1_00001


MOSFET N Trench 50V 360mA 1.5V @ 250uA 1.6 Ω @ 500mA,10V SOT-323 RoHS
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Panjit 50339
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AUD 0.0355
Multiples of: 1

                   
IRFL014TRPBF-BE3


N-Channel 60V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
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Vishay 50227
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AUD 0.9323
Multiples of: 1

          TO - 261 - 4 , TO - 261AADigi - Reel®Mosfet (Metal Oxide)      
DMTH6004SK3-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 49877
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AUD 0.8866
Multiples of: 1

         Smd/SmtTO - 252 - 3Cut TapeSi      
BSS84W-7-F


P-Channel 50 V 130mA (Ta) 200mW (Ta) Surface Mount SOT-323
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Diodes Incorporated 49470
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AUD 0.0429
Multiples of: 3000

130 mA50 V10 OhmsP - Channel 800 mV- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel5 V Enhancement  
Si2301CDS-T1-E3


MOSFET 20V 3.1A 1.6W 112mohm @ 4.5V
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Vishay 49470
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AUD 0.1696
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
IPD053N08N3GATMA1


Infineon Technologies MOSFET
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Infineon 49459
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AUD 1.581
Multiples of: 1

90 A80 V5.3 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V52 nCEnhancement Optimos
IRF8010PBF


MOSFET N Trench 100V 80A (Tc) 4V @ 250uA 15 mΩ @ 45A,10V TO-220 (TO-220-3) RoHS
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Infineon 315
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AUD 1.293
Multiples of: 1

80 A100 V15 mOhmsN - Channel    260 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V81 nC   
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