MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3J325F,LF


Toshiba MOSFET P-Ch Small Signal 270pF -2A -20V 4.6nC
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Toshiba 49181
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AUD 0.088
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- 2 A- 20 V311 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C600 mWSmd/SmtSC - 59 - 3ReelSi1 Channel8 V4.6 nC   
SI3424CDV-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 49124
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AUD 0.2558
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8 A30 V26 mOhmsN - Channel 2.5 V- 55 C+ 150 C3.6 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V4.2 nCEnhancement  
SQ3481EV-T1_BE3


MOSFET P-CHANNEL 30V D-S
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Vishay 49117
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AUD 0.4731
Multiples of: 1

7.5 A30 V35 mOhmsP - Channel 2.5 V- 55 C+ 175 C4 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V15.4 nCEnhancement TrenchFET
Hot IRF740PBF


MOSFET RECOMMENDED ALT 844-IRF740PBF
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Vishay 49066
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AUD 0.6017
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10 A400 V550 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V63 nCEnhancement  
PMBF170,215


N-Channel 60 V 300mA (Ta) 830mW (Tc) Surface Mount TO-236AB
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Nexperia 49004
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AUD 0.0532
Multiples of: 10

300 mA60 V5 OhmsN - Channel 1 V- 65 C+ 150 C830 mWSmd/SmtSOT - 23ReelSi1 Channel10 V Enhancement  
BSL207SPH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
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Infineon 48998
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AUD 0.3881
Multiples of: 1

            Optimos P      
PMV40UN2R


N-Channel 30 V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB
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Nexperia 48538
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AUD 0.1279
Multiples of: 5

4.4 A30 V44 mOhmsN - Channel 400 mV- 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V7 nCEnhancement  
2N7002K


SOT-23 MOSFETs ROHS
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TWGMC 45832
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AUD 0.0127
Multiples of: 50

                   
AP30P30Q


MOSFET P Channel 30V 30A(Tc) 2V @ 250uA 10mO @ 15A,10V DFN3*3 RoHS
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Quan Li 45022
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AUD 0.3371
Multiples of: 5

                   
SSM3J332R,LF


MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS
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Toshiba 35851
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AUD 0.0465
Multiples of: 10

6 A30 V144 mOhmsP - Channel 500 mV + 150 C1 WSmd/SmtSOT - 23FReelSi1 Channel- 1.8 V8.2 nCEnhancement  
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