MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG1012T-7


MOSFET MOSFET N-CHANNEL SOT-523
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Diodes Incorporated 97640
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AUD 0.0625
Multiples of: 10

630 mA20 V400 mOhmsN - Channel 500 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel4.5 V736.6 pCEnhancement  
AO3416A


MOSFET N Trench 20V 6.5A 1.1V @ 250uA 22 mΩ @ 6.5A,4.5V SOT-23 RoHS
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Youtai 95273
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AUD 0.0307
Multiples of: 20

                   
TPZXMP3A13FTA


SOT-23 MOSFETs ROHS
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TECH PUBLIC 45434
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AUD 0.0671
Multiples of: 10

                   
RTF025N03FRATL


MOSFET Nch 30V Vds 2.5A 0.07Rds(on) 3.7Qg
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ROHM 45405
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AUD 0.2501
Multiples of: 1

2.5 A30 V48 mOhmsN - Channel 500 mV + 150 C800 mWSmd/SmtTUMT - 3Cut TapeSi1 Channel4.5 V3.7 nCEnhancementAec - Q101 
IRL3713PBF


MOSFET N Trench 30V 260A 2.5V @ 250uA 3 mΩ @ 38A,10V TO-220 (TO-220-3) RoHS
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Infineon 45105
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AUD 1.7161
Multiples of: 1

200 A30 V4 mOhmsN - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V75 nC   
SQ4940AEY-T1_BE3


MOSFET Dual N-CHANNEL 40 V
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Vishay 45009
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AUD 0.7635
Multiples of: 1

           Cut Tape       
PJA3460_R1_00001


MOSFET /A60/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-60TMN/NF60T-QI04/PJ///
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Panjit 44385
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AUD 0.1084
Multiples of: 1

2.5 A60 V90 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.3 nCEnhancement  
CJ3134K KF


MOSFET N Trench 20V 750mA 1.1V @ 250uA 380 mΩ @ 650mA,4.5V SOT-723 RoHS
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Changjing Electronics Technology 33911
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AUD 0.0264
Multiples of: 20

                   
STW56N60M2-4


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 6.3879
Multiples of: 600

52 A600 V45 mOhmsn - channel 2 V + 150 C350 Wthrough holeTO - 247 - 4Reelsi1 channel25 V91 nCenhancement mdmesh
IAUCN04S7N020ATMA1


MOSFETs N
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Infineon 0
6 to 16 Weeks Calender.png

AUD 0.6804
Multiples of: 1

139 A40 V2.05 mOhmsN - Channel 2.6 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25 nCEnhancement  
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