MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE40P05Y


MOSFET P Trench 40V 5.3A 3V @ 250uA 85 mΩ @ 5A,10V SOT-23-3L RoHS
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NCE Power 48121
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AUD 0.0637
Multiples of: 10

                   
SI7810DN-T1-E3


MOSFET 100V 5.4A 3.8W 62mohm @ 10V
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Vishay 48009
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AUD 1.1122
Multiples of: 1

   n - channel  - 55 C+ 150 C smd/smtPOWERPAK 1212 - 8Reel       
DMG2307L-7


MOSFET MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K
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Diodes Incorporated 47956
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AUD 0.0621
Multiples of: 10

3.8 A30 V90 mOhmsP - Channel 1 V- 55 C+ 150 C1.9 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V8.2 nCEnhancement  
BSS138BK.215


Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23
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Nexperia 47340
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AUD 0.3133
Multiples of: 1

                   
BSC018NE2LSI


Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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Infineon 47225
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AUD 0.756
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100 A25 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8-Si1 Channel20 V48 nCEnhancement Optimos
PJE8406_R1_00001


MOSFET /E06/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI02/PJ///
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Panjit 47025
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AUD 0.154
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BSC093N04LS G


MOSFET OptiMOS 3 PWR TRANST 40V 49A
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Infineon 46613
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AUD 0.3283
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49 A40 V7.8 mOhmsN - Channel 1.2 V- 55 C+ 150 C35 WSmd/SmtTDSONReelSi1 Channel20 V24 nCEnhancement Optimos
2N7002KT7G


MOSFET NFET SOT23 60V 115MA 7MO
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ON Semiconductor 40740
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AUD 0.0391
Multiples of: 3500

300 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
SUM110P06-07L-E3


P-Channel 60 V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
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Vishay 15520
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AUD 2.9345
Multiples of: 800

110 A60 V6.9 mOhmsP - Channel 1 V- 55 C+ 175 C375 mWSmd/SmtTO - 263 - 3ReelSi1 Channel- 10 V230 nCEnhancement Trenchfet
BSS138N H6327


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 342
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AUD 0.0594
Multiples of: 1

230 mA60 V2.2 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel20 V1.4 nCEnhancement  
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