MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR9024NTRPBF


MOSFET P Trench 55V 11A 4V @ 250uA 175 mΩ @ 6.6A,10V TO-252-2 (DPAK) RoHS
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Infineon 56677
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AUD 0.2268
Multiples of: 5

            Hexfet®      
NVR4003NT3G


MOSFET NFET 30V .56A 1500M
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ON Semiconductor 48500
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AUD 0.1105
Multiples of: 10000

0.5 A30 V1.5 OhmsN - Channel20 V1.4 V- 55 C+ 150 C0.83 WSmd/SmtSOT - 23 - 3Reel   1.15 nC   
LSI1012XT1G


20V 500mA 250mW 410mΩ@4.5V,600mA 900mV@250uA N Channel SC-89 MOSFETs ROHS
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Leshan 48325
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AUD 0.0307
Multiples of: 20

                   
SI2309CDS-T1-GE3


MOSFET -60V Vds 20V Vgs SOT-23
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Vishay 48320
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AUD 0.1765
Multiples of: 5

1.6 A60 V345 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement Trenchfet
PJQ4403P_R2_00001


MOSFET /4403/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMP//PJ/DFN33338L-AS09/PJQ4403P-AS76/DFN33338L-AS01
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Panjit 48237
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AUD 0.3231
Multiples of: 1

35 A30 V15.5 mOhmsP - Channel 2.5 V- 55 C+ 150 C30 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V15 nCEnhancement  
Si2302CDS-T1-GE3-ES


20V 3.5A 350mW 36m@10V,3.5A 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 48184
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AUD 0.0174
Multiples of: 5

                   
FDME1023PZT


MOSFET 20V Dual P-Channel PowerTrench
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ON Semiconductor 48148
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AUD 0.5327
Multiples of: 1

2.3 A20 V95 mOhmsP - Channel 600 mV- 55 C+ 150 C1.3 WSmd/SmtMICRO - FET 1.6 x 1.6 TH inReelSi2 Channel8 V5.5 nC  Powertrench
BSS131


SOT-23 MOSFETs ROHS
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HXY MOS 48102
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AUD 0.0901
Multiples of: 5

                   
SI2338DS-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 47875
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AUD 0.2577
Multiples of: 1

6 A30 V28 mOhmsN - Channel 2.5 V- 55 C+ 150 C2.5 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V4.2 nCEnhancement  
AP5N10S


100V 5A 115mΩ@10V,3A 5W N Channel SOT-23-3L MOSFETs ROHS
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Quan Li 46948
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AUD 0.092
Multiples of: 10

                   
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