MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFL4310TRPBF


MOSFET N Trench 100V 1.6A 4V @ 250uA 200 mΩ @ 1.6A,10V SOT-223 RoHS
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Infineon 94575
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AUD 0.3638
Multiples of: 2500

1.6 A100 V200 mOhmsN - Channel    2.1 WSmd/SmtSOT - 223ReelSi1 Channel20 V17 nC   
BSN20BKR


Transistor: N-MOSFET; unipolar; 60V; 0.17A; 402mW; SOT23
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Nexperia 65639
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AUD 0.0417
Multiples of: 10

                   
8205A


20V 22mΩ@4.5V,4.5A 2W 1.5V@250uA 74.69pF@8V 2 N Channel(Double)Common Drain 522.3pF@8V 6.24nC@4.5V -55℃~+150℃@(Tj) SOT-23-6 MOSFETs ROHS
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JSMSEMI 46550
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AUD 0.0451
Multiples of: 10

                   
IPD053N08N3GATMA1


Infineon Technologies MOSFET
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Infineon 46434
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AUD 1.691
Multiples of: 1

90 A80 V5.3 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V52 nCEnhancement Optimos
FDMS3600S


MOSFET 25V Dual N-Channel PowerTrench MOSFET
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ON Semiconductor 46307
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AUD 1.9086
Multiples of: 1

15 A , 30 A25 V5.6 mOhms , 1.6 mOhmsn - channel 1.8 v , 1.5 V- 55 C+ 150 C2.2 w , 2.5 Wsmd/smtPOWER 56Reelsi2 channel20 V19 nC  power stage
BSC018NE2LSI


Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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Infineon 46257
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AUD 0.7306
Multiples of: 1

100 A25 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8-Si1 Channel20 V48 nCEnhancement Optimos
PSMN026-80YS,115


MOSFET N-CH 80V 27.5 mOhm Standard MOSFET
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Nexperia 46139
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AUD 0.4728
Multiples of: 1

34 A80 V27.5 mOhmsN - Channel 4 V- 55 C+ 175 C74 WSMD/SMTSOT - 669 - 5Reel , Cut TapeSi1 Channel- 20 V , 20 V20 nCEnhancement  
IRFL014NTRPBF


MOSFET N Trench 55V 1.9A 4V @ 250uA 160 mΩ @ 1.9A,10V SOT-223 RoHS
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Infineon 45951
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AUD 0.3366
Multiples of: 1

   N Channel      SOT - 223Reel       
CJ2303


MOSFET P Trench 30V 1.9A 3V @ 250uA 190 mΩ @ 1.9A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 42466
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AUD 0.0328
Multiples of: 20

                   
30P06


60V 30A 30mΩ 2.5V P Channel TO-252 MOSFETs ROHS
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HL 42461
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AUD 0.1832
Multiples of: 5

                   
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