MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SPD08P06P G


TO-252-3 MOSFETs ROHS
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Infineon 46343
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AUD 0.4749
Multiples of: 1

8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252ReelSi1 Channel20 V- 13 nCEnhancementAec - Q101Sipmos
FDMS3600S


MOSFET 25V Dual N-Channel PowerTrench MOSFET
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ON Semiconductor 46307
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AUD 2.1375
Multiples of: 1

15 A , 30 A25 V5.6 mOhms , 1.6 mOhmsn - channel 1.8 v , 1.5 V- 55 C+ 150 C2.2 w , 2.5 Wsmd/smtPOWER 56Reelsi2 channel20 V19 nC  power stage
2N7002K


MOSFET N Trench 60V 300mA 2.5V @ 250uA 5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Hottech 46172
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AUD 0.0118
Multiples of: 50

                   
STD86N3LH5


STMicroelectronics MOSFET N-channel 30 V
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STMicroelectronics 46075
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AUD 0.9522
Multiples of: 2500

80 A30 V5 mOhmsN - Channel22 V - 55 C+ 175 C70 WSmd/SmtDPAK - 3ReelSi1 Channel22 V EnhancementAec - Q101 
SI2309S


SOT-23 MOSFETs ROHS
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Bourne 45900
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AUD 0.0611
Multiples of: 10

                   
8205A


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 45747
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AUD 0.0429
Multiples of: 10

                   
SI2302


MOSFET N Trench 20V 2.1A 1.2V @ 50uA 72 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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Hottech 45590
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AUD 0.0244
Multiples of: 20

                   
RTF025N03FRATL


MOSFET Nch 30V Vds 2.5A 0.07Rds(on) 3.7Qg
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ROHM 45405
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AUD 0.2501
Multiples of: 1

2.5 A30 V48 mOhmsN - Channel 500 mV + 150 C800 mWSmd/SmtTUMT - 3Cut TapeSi1 Channel4.5 V3.7 nCEnhancementAec - Q101 
BSL316C H6327


Infineon Technologies MOSFET SMALL SIGNALP-CH
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Infineon 44863
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AUD 0.2183
Multiples of: 1

1.4 A , 1.5 A30 V119 mOhms , 113 mOhmsP - Channel 1.2 v , 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6ReelSi1 Channel20 V600 pC , - 2.4 nCEnhancement  
FDB0170N607L


MOSFET 60V TO263 7L JEDEC GREEN EMC
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ON Semiconductor 37248
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AUD 3.954
Multiples of: 800

300 A60 V3.5 mOhmsN - Channel 2 V- 55 C+ 175 C3.8 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V173 nCEnhancement  
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