MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLM120ATF


Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R
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ON Semiconductor 42680
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AUD 0.3695
Multiples of: 1

2.3 A100 V220 mOhmsn - channel  - 55 C+ 150 C2.7 Wsmd/smtSOT - 223 - 3Reel 1 channel20 V enhancement  
BSS119N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 42601
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AUD 0.1387
Multiples of: 1

190 mA100 V2.406 OhmsN - Channel 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancement  
NDC7001C


Transistor: N/P-MOSFET; unipolar; 60/-60V; 0.51/0.34A; 0.96W
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ON Semiconductor 42195
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AUD 0.2343
Multiples of: 1

                   
SPS01N60C3


MOSFET COOL MOS POWER TRANSISTOR
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Infineon 42195
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AUD 0.5874
Multiples of: 1137

800 mA600 V6 OhmsN - Channel 2.1 V- 55 C+ 150 C11 WThrough HoleTO - 251TubeSi1 Channel20 V3.9 nCEnhancement Coolmos
KM3139K


20V 660mA 510mΩ@4.5V,0.5A 150mW 800mV@250uA P Channel SOT-723 MOSFETs ROHS
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Yongyutai Electronics 41865
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AUD 0.0226
Multiples of: 20

                   
BSS138BKSH


MOSFET BSS138BKS SC-88
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Nexperia 35288
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AUD 0.0786
Multiples of: 1

320 mA60 V1.6 OhmsN - Channel 480 mV- 55 C+ 150 C310 mWSmd/SmtTSSOP - 6 Si1 Channel20 V0.7 nCEnhancement  
FDB2532


Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK
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ON Semiconductor 23280
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AUD 2.7321
Multiples of: 800

            Powertrench®      
BSC014N04LSIATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
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Infineon 19400
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AUD 1.2789
Multiples of: 5000

            Optimos      
DMG3415U-7


MOSFET P-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 2284
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AUD 0.1124
Multiples of: 5

4 A20 V42.5 mOhmsP - Channel 300 mV- 55 C+ 150 C900 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V9.1 nCEnhancement  
BSC054N04NSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
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Infineon 1020
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AUD 0.4608
Multiples of: 1

81 A40 V4.5 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V34 nCEnhancement OptiMOS
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