MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NX3020NAKW,115


N-Channel 30 V 180mA (Ta) 260mW (Ta), 1.1W (Tc) Surface Mount SOT-323
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Nexperia 43650
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AUD 0.0427
Multiples of: 1

180 mA30 V2.7 OhmsN - Channel- 20 V1.2 V- 55 C+ 150 C260 mWSmd/SmtSC - 70 - 3Reel   0.34 nC   
STD4NK50ZT4


Transistor: N-MOSFET; unipolar; 500V; 1.9A; 45W; DPAK
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STMicroelectronics 43650
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AUD 0.7931
Multiples of: 2500

            Supermesh      
DMC3021LSDQ-13


MOSFET MOSFET BVDSS 30V Comp Pair
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Diodes Incorporated 43570
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AUD 0.4212
Multiples of: 1

8.5 A , - 7 A30 v , - 30 V14 mOhms , - 30 mOhmsN - Channel, P - Channel20 V1 v , - 1 V- 55 C+ 100 C2.5 WSmd/SmtSO - 8ReelSi2 Channel20 V16.1 nC , 21.1 nCEnhancementAec - Q101 
BSS127 H6327


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 43466
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AUD 0.1152
Multiples of: 1

21 mA600 V500 OhmsN - Channel 1.4 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT23 - 3ReelSi1 Channel10 V0.65 nCDepletion  
BSZ0704LSATMA1


N-Channel 60V 11A (Ta), 40A (Tc) 2.1W (Ta), 36W (Tc) Surface Mount PG-TSDSON-8-FL
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Infineon 43464
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AUD 0.4812
Multiples of: 1

          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
BSS159N H6906


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 43391
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AUD 0.4071
Multiples of: 1

230 mA60 V1.7 OhmsN - Channel 3.5 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel20 V1.4 nCDepletion  
SSM6J214FE(TE85L,F


MOSFET LowON Res MOSFET ID=-3.6A VDSS=-30V
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Toshiba 43354
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AUD 0.2094
Multiples of: 5

3.6 A30 V50 mOhmsP - Channel 1.2 V- 55 C+ 150 C700 mWSMD/SMTSOT - 563 - 6Reel , Cut TapeSi1 Channel- 12 V , + 12 V7.9 nCEnhancement U - MOSVI
SI2301-TP


mosfet p trench 20v 2.8a 450mv @ 250ua (min) 120 m @ 2.8a,4.5v sot-23 (sot-23-3) rohs
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Micro Commercial Components (MCC) 37830
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AUD 0.0567
Multiples of: 3000

                   
FDN359BN


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 37830
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AUD 0.2157
Multiples of: 3000

2.7 A30 V46 mOhmsN - Channel  - 55 C+ 150 C500 mWSmd/SmtSSOT - 3ReelSi1 Channel20 V Enhancement  
NTS4409NT1G


MOSFET NFET 25V/8V 75mA 350
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ON Semiconductor 32010
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AUD 0.0912
Multiples of: 3000

750 mA25 V350 mOhmsN - Channel 650 mV- 55 C+ 150 C330 mW (1/3 w)Smd/SmtSC - 70 - 3Cut TapeSi1 Channel4.5 V1.2 nCEnhancement  
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