MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS119N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 42601
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AUD 0.1387
Multiples of: 1

190 mA100 V2.406 OhmsN - Channel 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancement  
LBSS8402DW1T1G


MOSFET N & P Trench 50V 130mA 1.5V @ 1mA,2V @ 250uA 3.5 Ω @ 200mA,5V;10 Ω @ 100mA,5V SC-88 RoHS
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Leshan 42573
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AUD 0.0653
Multiples of: 10

                   
SI3900DV-T1-E3


MOSFET 20V N-CHANNEL (D-S) TRENCH DU
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Vishay 42454
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AUD 1.5121
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   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
TPZXMP3A13FTA


SOT-23 MOSFETs ROHS
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TECH PUBLIC 42292
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AUD 0.0623
Multiples of: 10

                   
BSS670S2LH6327XTSA1


Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
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Infineon 42288
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AUD 0.0722
Multiples of: 1

            Optimos      
IPB024N10N5ATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 42222
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AUD 2.8239
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           Cut Tape       
SPS01N60C3


MOSFET COOL MOS POWER TRANSISTOR
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Infineon 42195
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AUD 0.5874
Multiples of: 1137

800 mA600 V6 OhmsN - Channel 2.1 V- 55 C+ 150 C11 WThrough HoleTO - 251TubeSi1 Channel20 V3.9 nCEnhancement Coolmos
IRFL014TRPBF-BE3


N-Channel 60V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
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Vishay 42080
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AUD 0.4351
Multiples of: 1

          TO - 261 - 4 , TO - 261AADigi - Reel®Mosfet (Metal Oxide)      
FDMS7692


MOSFET PT7 30/20V Nch PowerTrench
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ON Semiconductor 40730
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AUD 0.3645
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14 A30 V6.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
2N7002T-7-F


60V 115mA 7.5O@5V,50mA 150mW N Channel SOT-523-3 MOSFETs ROHS
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Diodes Incorporated 1484
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AUD 0.0606
Multiples of: 10

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel10 V Enhancement  
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