MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ4431EY-T1_BE3


MOSFET P-CHANNEL 30V
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Vishay 41052
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AUD 0.7219
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10.8 A30 V22 mOhmsP - Channel 2.5 V- 55 C+ 175 C6 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V25 nCEnhancement TrenchFET
BSS83PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
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Infineon 40988
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AUD 0.0974
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            Sipmos      
2SJ281-TL-E


Trans MOSFET P-CH Si 250V 3A 3-Pin(2+Tab) TP-FA
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ON Semiconductor 40969
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AUD 0.4389
Multiples of: 1

                enhancement  
PJA3411_R1_00001


MOSFET P Trench 20V 3.1A 1.2V @ 250uA 190 mΩ @ 1.1A,1.8V SOT-23 RoHS
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Panjit 40611
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AUD 0.1365
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FDN5618P


MOSFET SSOT-3 P-CH 60V
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ON Semiconductor 40565
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AUD 0.1335
Multiples of: 5

1.2 A60 V170 mOhmsP - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSSOT - 3Cut TapeSi1 Channel20 V Enhancement Powertrench
IPB024N10N5ATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 40447
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AUD 2.4671
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           Cut Tape       
SE30150B


MOSFET N Trench 30V 150A 3V @ 250uA 1.9 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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SINO-IC 40022
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AUD 0.2964
Multiples of: 5

                   
2SK3019


MOSFET N Channel 30V 100mA 1.5V @ 100uA 8Ω @ 10mA,4V SOT-523 RoHS
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Changjing Electronics Technology 37946
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AUD 0.0268
Multiples of: 20

                   
AP3010


MOSFET N Trench 30V 10A 3V @ 250uA 12 mΩ @ 10A,10V SOP-8 RoHS
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Quan Li 36753
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AUD 0.1084
Multiples of: 10

                   
CJ3404


MOSFET N Trench 30V 5.8A 3V @ 250uA 30 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 35405
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AUD 0.0343
Multiples of: 20

                   
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