MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
EMH2407-TL-H


ON Semiconductor MOSFET NCHNCH 4V DRIVE SERIES
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ON Semiconductor 42026
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AUD 0.3046
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6 A20 V25 mOhmsn - channel     smd/smtEMH8 - 8Reelsi      
CPH3456-TL-W


MOSFET NCH 1.8V DRIVE SERIE
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ON Semiconductor 41991
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AUD 0.2357
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3.5 A20 V54 mOhmsn - channel 400 mV + 150 C1 Wsmd/smtSOT - 23 - 3Cut Tapesi1 channel12 V2.8 nCenhancement  
BR8205


MOSFET 2 N Channel（Double）Common Drain 20V 6A 1.2V @ 250uA 24 mΩ @ 6A,4.5V SOT23-6 RoHS
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Blue Rocket 41969
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AUD 0.0347
Multiples of: 10

                   
SI2303CDS-T1-BE3


MOSFET 30V P-CHANNEL (D-S)
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Vishay 41767
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AUD 0.2942
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2.7 A30 V190 mOhmsP - Channel 3 V- 55 C+ 150 C2.3 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V2 nCEnhancement  
ZXMHC6A07N8TC


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SO
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Diodes Incorporated 41583
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AUD 0.7857
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1.8 A , 1.42 A60 V250 mOhms , 400 mOhmsN_And_P - channel 1 V- 55 C+ 150 C0.87 WSmd/smtSOIC - 8ReelSi4 Channel10 v , - 10 V3.2 nC , 5.7 nCEnhancement  
ESD5304D


DFN-10(2.5x1) MOSFETs ROHS
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TECH PUBLIC 41450
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AUD 0.044
Multiples of: 10

                   
CJ2310 S10


MOSFET N Trench 60V 3A 2V @ 250uA 105 mΩ @ 3A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 41409
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AUD 0.0364
Multiples of: 10

                   
TPNTS4101PT1G


20V 2.3A 100mΩ@4.5V,2.3A 290mW 700mV@250uA 82pF@8V P Channel 640pF@8V +125℃@(Tj) SOT-323 MOSFETs ROHS
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TECH PUBLIC 41396
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AUD 0.0461
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SIR680LDP-T1-RE3


N-Channel 80V 31.8A (Ta), 130A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 30025
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AUD 1.6448
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          Powerpak® SO - 8Cut Tape (Ct)Mosfet (Metal Oxide)      
DMN63D8L-7


MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
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Diodes Incorporated 3317
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AUD 0.0444
Multiples of: 10

350 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C520 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.9 nCEnhancement  
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