MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS169 H6906


Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3
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Infineon 42942
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AUD 0.5385
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90 mA100 V12 OhmsN - Channel 2.9 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V2.8 nCDepletion  
SI1967DH-T1-E3


MOSFET 20V 1.3A 1.25W 490mohm @ 4.5V
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Vishay 42932
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AUD 0.1921
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSC - 70 - 6ReelSi     Trenchfet
AO3404


MOSFET N Trench 30V 5.8A 3V @ 250uA 30 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Hottech 42847
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AUD 0.0324
Multiples of: 20

                   
SI2323DS(UMW)


SOT-23 MOSFETs ROHS
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Youtai 42840
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AUD 0.0455
Multiples of: 10

                   
NTR3A052PZT1G


MOSFET PFET SOT23 20V 52MO
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ON Semiconductor 42820
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AUD 0.2706
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3.6 A20 V47 mOhmsP - Channel 400 mV- 55 C+ 150 C860 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V11.9 nCEnhancement  
FQT7N10LTF


Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
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ON Semiconductor 42680
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AUD 0.2985
Multiples of: 4000

            Qfet®      
DMG6602SVTX-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 42623
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AUD 0.133
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3.4 A , 2.8 A30 V60 mOhms , 95 mOhmsN - Channel, P - Channel 500 mV , 1.8 V- 55 C+ 150 C1.12 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V13 nC , 9 nCEnhancement  
BSS119N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 42601
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AUD 0.1387
Multiples of: 1

190 mA100 V2.406 OhmsN - Channel 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancement  
SSM3K324R,LF


Toshiba MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
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Toshiba 42379
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AUD 0.0484
Multiples of: 10

4 A30 V109 mOhmsN - Channel 0.4 v to 1 V + 150 C2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V2.2 nCEnhancement  
2N7000-D26Z


MOSFET N Trench 60V 200mA 3V @ 1mA 5 Ω @ 500mA,10V TO-92-3L RoHS
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ON Semiconductor 40740
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AUD 0.1153
Multiples of: 2000

200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel20 V Enhancement  
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