MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3J328R,LF


P-Channel 20 V 6A (Ta) 1W (Ta) Surface Mount SOT-23F
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Toshiba 74544
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AUD 0.0508
Multiples of: 10

- 6 A- 20 V47.4 mOhmsP - Channel8 V- 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 23F - 3ReelSi1 Channel- 1.5 V12.8 nCEnhancement  
PJA3411_R1_00001


MOSFET P Trench 20V 3.1A 1.2V @ 250uA 190 mΩ @ 1.1A,1.8V SOT-23 RoHS
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Panjit 40611
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AUD 0.1365
Multiples of: 1

                   
SQ3426AEEV-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay 40158
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AUD 0.4144
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7 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V11.5 nCEnhancement TrenchFET
PJA3415_R1_00001


MOSFET P Trench 20V 4A 1.2V @ 250uA 95 mΩ @ 2.1A,1.8V SOT-23 RoHS
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Panjit 40029
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AUD 0.1
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IRF3710PBF


MOSFET N Trench 100V 57A 4V @ 250uA 23 mΩ @ 28A,10V TO-220 (TO-220-3) RoHS
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Infineon 39389
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AUD 0.4743
Multiples of: 1

            Hexfet®      
AP3010


MOSFET N Trench 30V 10A 3V @ 250uA 12 mΩ @ 10A,10V SOP-8 RoHS
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Quan Li 39343
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AUD 0.1072
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TPM7002DFN3


MOSFET DFN1006-3 RoHS
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TECH PUBLIC 38198
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AUD 0.0314
Multiples of: 20

                   
AP30H50Q


30V 40A 6.5mΩ@10V,15A 30W N Channel DFN-8(3.1x3.2) MOSFETs ROHS
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Quan Li 34027
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AUD 0.1445
Multiples of: 5

                   
IRLR024NTRPBF


MOSFET N Trench 55V 17A 2V @ 250uA 65 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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Infineon 26961
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AUD 0.2519
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17 A55 V110 mOhmsN - Channel  - 55 C+ 175 C38 WSmd/SmtDPAKReelSi1 Channel16 V10 nCEnhancement  
BSS138P


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 21427
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AUD 0.0105
Multiples of: 10

                   
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