MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002K


MOSFET 60V, 115mA N-Chan
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ON Semiconductor 1452090
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AUD 0.0515
Multiples of: 3000

300 mA60 V2 OhmsN - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V Enhancement  
SQ4431EY-T1_BE3


MOSFET P-CHANNEL 30V
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Vishay 41052
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AUD 0.7219
Multiples of: 1

10.8 A30 V22 mOhmsP - Channel 2.5 V- 55 C+ 175 C6 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V25 nCEnhancement TrenchFET
BSS84IXUSA1


MOSFETs Small Signal MOSFET, -60 V
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Infineon 40979
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AUD 0.055
Multiples of: 1

290 mA60 V5.5 OhmsP - Channel 2 V- 55 C+ 150 C960 mWSMD/SMT Reel , Cut TapeSi1 Channel20 V290 pCEnhancement  
2SJ281-TL-E


Trans MOSFET P-CH Si 250V 3A 3-Pin(2+Tab) TP-FA
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ON Semiconductor 40969
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AUD 0.4389
Multiples of: 1

                enhancement  
STP120N4F6


STMicroelectronics MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI
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STMicroelectronics 40740
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AUD 0.9775
Multiples of: 1000

80 A40 V4.3 mOhmsN - Channel 4 V- 55 C+ 175 C110 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V65 nCEnhancementAec - Q101Stripfet
AO4468


MOSFET N Trench 30V 10.5A 3V @ 250uA 14 mΩ @ 11.6A,10V SOP-8_150mil RoHS
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Alpha & Omega 40672
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AUD 0.1384
Multiples of: 5

11.6 A  N    3.1 WSurface Mount      Enhancement  
NCE3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 65 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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NCE Power 32669
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AUD 0.0708
Multiples of: 10

                   
BSS131


SOT-23 MOSFETs ROHS
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HXY MOS 28406
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AUD 0.084
Multiples of: 5

                   
ST3422A


60V 6A 28mΩ@10V,6A 2W 3V@250uA N Channel SOT-23-3L MOSFETs ROHS
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STANSON Tech 25050
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AUD 0.0743
Multiples of: 5

                   
ZXMHC6A07N8TC


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SO
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Diodes Incorporated 2198
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AUD 0.8406
Multiples of: 1

1.8 A , 1.42 A60 V250 mOhms , 400 mOhmsN_And_P - channel 1 V- 55 C+ 150 C0.87 WSmd/smtSOIC - 8ReelSi4 Channel10 v , - 10 V3.2 nC , 5.7 nCEnhancement  
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