MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002


Junction Field-Effect Transistor，JFET SOT23 RoHS
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TWGMC 64165
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AUD 0.0124
Multiples of: 50

                   
BSC110N06NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 41906
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AUD 0.3237
Multiples of: 1

50 A60 V9 mOhmsN - Channel 2 V- 55 C+ 150 C50 WSmd/SmtTDSONReelSi1 Channel20 V33 nCEnhancement Optimos
2SK3018


MOSFET N Trench 30V 100mA 1.5V @ 100uA 8 Ω @ 10mA,4V SOT-323 (SC-70) RoHS
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Changjing Electronics Technology 41807
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AUD 0.0233
Multiples of: 20

                   
IRFL014NTRPBF


MOSFET N Trench 55V 1.9A 4V @ 250uA 160 mΩ @ 1.9A,10V SOT-223 RoHS
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Infineon 41776
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AUD 0.3253
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   N Channel      SOT - 223Reel       
SI2303CDS-T1-BE3


MOSFET 30V P-CHANNEL (D-S)
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Vishay 41767
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AUD 0.2942
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2.7 A30 V190 mOhmsP - Channel 3 V- 55 C+ 150 C2.3 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V2 nCEnhancement  
FDMS3669S


Fairchild Semiconductor MOSFET 30V Asymmetric Dual N-Channel Pwr Trench
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ON Semiconductor 41386
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AUD 1.2304
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60 A30 V10 mOhmsN - Channel 2 V- 55 C+ 150 C2.5 WSmd/SmtPOWER - 56 - 8ReelSi2 Channel20 V34 nC  Power Stage Powertrench
SI2307A


MOSFET P Trench 30V 3A 3V @ 250uA 80 mΩ @ 3A,10V SOT-23 RoHS
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Youtai 41360
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AUD 0.0322
Multiples of: 20

                   
IRLL2705TRPBF


Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
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Infineon 41225
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AUD 0.4107
Multiples of: 2500

3.8 A55 V65 mOhmsN - Channel    2.1 WSmd/SmtSOT - 223ReelSi1 Channel16 V32 nC   
5LP01SS-TL-H


Trans MOSFET P-CH 50V 0.07A 3-Pin SSFP T/R
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ON Semiconductor 41190
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AUD 0.1279
Multiples of: 1

                   
NCE2309


60V 1.6A 140mO@10V,1.5A 1.5W P Channel SOT-23 MOSFETs ROHS
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NCE Power 39236
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AUD 0.0764
Multiples of: 10

                   
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