MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2314EDS-T1-E3


N-Channel 20 V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 41715
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AUD 0.4301
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   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3ReelSi     Trenchfet
PSMN4R0-40YS,115


NXP Semiconductors MOSFET N-CH 40V 4.2 mOhm Standard MOSFET
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Nexperia 41633
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AUD 0.8398
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100 A40 V4 mOhmsN - Channel    106 WSmd/SmtLFPAK - 4ReelSi1 Channel     
ESD5304D


DFN-10(2.5x1) MOSFETs ROHS
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TECH PUBLIC 41450
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AUD 0.044
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CJ2310 S10


MOSFET N Trench 60V 3A 2V @ 250uA 105 mΩ @ 3A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 41409
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AUD 0.0364
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5LP01SS-TL-H


Trans MOSFET P-CH 50V 0.07A 3-Pin SSFP T/R
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ON Semiconductor 41190
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AUD 0.2367
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DMP3130LQ-7


MOSFET P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101
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Diodes Incorporated 41154
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AUD 0.1855
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3.5 A30 V150 mOhmsP - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V12 nCEnhancementAec - Q101 
ZXMHC6A07N8TC


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SO
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Diodes Incorporated 41140
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AUD 0.6452
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1.8 A , 1.42 A60 V250 mOhms , 400 mOhmsN_And_P - channel 1 V- 55 C+ 150 C0.87 WSmd/smtSOIC - 8ReelSi4 Channel10 v , - 10 V3.2 nC , 5.7 nCEnhancement  
SI4943BDY-T1-E3


MOSFET 20V 8.4A 2W
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Vishay 41126
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AUD 1.4931
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   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
MCH3383-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 41119
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AUD 0.3452
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3.5 A12 V500 mOhmsp - channel 300 mV- 55 C+ 150 C1 Wsmd/smtMCPH - 3Reelsi1 channel- 0.9 V6.2 nCenhancement  
SQ4431EY-T1_BE3


MOSFET P-CHANNEL 30V
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Vishay 41052
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AUD 0.7219
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10.8 A30 V22 mOhmsP - Channel 2.5 V- 55 C+ 175 C6 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V25 nCEnhancement TrenchFET
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First...7172737475...

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