MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG1013T


20V 550mA 610mΩ@4.5V,550mA 280mW 750mV@250uA 5pF@10V P Channel 60pF@10V +150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 40818
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AUD 0.0376
Multiples of: 10

                   
STL9P3LLH6


MOSFET LGS LV MOSFET
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STMicroelectronics 40740
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AUD 0.725
Multiples of: 3000

- 9 A- 30 V12 mOhmsP - Channel - 1 V- 55 C+ 150 C3 WSmd/SmtPowerflat - 8Cut TapeSi1 Channel+/- 20 V24 nCEnhancement Stripfet
STP120N4F6


STMicroelectronics MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI
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STMicroelectronics 40740
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AUD 1.6411
Multiples of: 1000

80 A40 V4.3 mOhmsN - Channel 4 V- 55 C+ 175 C110 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V65 nCEnhancementAec - Q101Stripfet
PJA3432_R1_00001


MOSFET /A32/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-20TMN/NF20T-QI13/PJ///
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Panjit 40639
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AUD 0.0865
Multiples of: 1

           Cut Tape       
PJA3411_R1_00001


MOSFET P Trench 20V 3.1A 1.2V @ 250uA 190 mΩ @ 1.1A,1.8V SOT-23 RoHS
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Panjit 40611
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AUD 0.1365
Multiples of: 1

                   
AP3003


30V 1.2W 19mΩ@10V,4.2A 1.3V@250uA 1PCSN-Channel&1PCSP-Channel SOT-23-6 MOSFETs ROHS
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Quan Li 40584
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AUD 0.126
Multiples of: 5

                   
FDMC86262P


MOSFET PT5 150V/25V Pch PowerTrench Mosfet
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ON Semiconductor 22759
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AUD 0.8486
Multiples of: 1

- 2 A- 150 V541 mOhmsP - Channel - 4 V- 55 C+ 150 C40 WSmd/SmtMLP - 8ReelSi1 Channel+/- 25 V9.1 nCEnhancement Powertrench
Si2333CDS-T1-E3


MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
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Vishay 2910
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AUD 0.3188
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
FDN358P


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
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ON Semiconductor 1081
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AUD 0.2786
Multiples of: 5

            Powertrench®      
PMV16XNR


N-Channel 20 V 6.8A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
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Nexperia 0
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AUD 0.1344
Multiples of: 1

8.6 A20 V20 mOhmsN - Channel12 V400 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V13.4 nCEnhancement  
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First...7172737475...

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