MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML6402


MOSFET P Trench 20V 3.7A 950mV @ 250uA 65 mΩ @ 3.7A,4.5V SOT-23 RoHS
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Youtai 51642
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AUD 0.028
Multiples of: 20

                   
AP4435C


30V 10A 16mΩ@10V,10A 3.7W P Channel SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li 42844
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AUD 0.1433
Multiples of: 5

                   
TPH4R606NH,L1Q(M


Trans MOSFET N-CH Si 60V 85A 8-Pin SOP Advance
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Toshiba 35713
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AUD 1.0786
Multiples of: 1

                   
Si2305CDS-T1-GE3


mosfet p trench 8v 5.8a 1v @ 250ua 35 m @ 4.4a,4.5v sot-23 (sot-23-3) rohs
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Vishay 35419
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AUD 0.1058
Multiples of: 5

                   
DMN1019USN-7


Diodes Incorporated MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
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Diodes Incorporated 32645
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AUD 0.168
Multiples of: 5

9.3 A12 V41 mOhmsN - Channel 0.53 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V27.3 nCEnhancement Dmn1019
TPCJ2101


20V 1.4A 100mO@4.5V,1A 290mW P Channel SOT-323-3 MOSFETs ROHS
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TECH PUBLIC 32262
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AUD 0.0451
Multiples of: 10

                   
FSS2302S A2SHB


20V 2.5A 1000mW 55mΩ@4.5V,3.6A 1.5V@250uA N Channel 600pF@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 26141
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AUD 0.0107
Multiples of: 50

                   
BSS138BK


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 24725
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AUD 0.0105
Multiples of: 10

                   
NDT014


MOSFET N-Channel FET Enhancement Mode
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ON Semiconductor 3337
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AUD 0.6262
Multiples of: 1

2.7 A60 V200 mOhmsN - Channel  - 65 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement  
NTJD5121NT2G


ON Semiconductor MOSFET NFET SC88D 60V 295mA
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ON Semiconductor 2555
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AUD 0.1407
Multiples of: 1

295 mA60 V1.6 Ohmsn - channel  - 55 C+ 150 C250 mWsmd/smtSOT - 363 - 6Reel  20 V0.9 nCenhancement  
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