MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2329DS-T1-GE3


MOSFET -8V Vds 5V Vgs SOT-23
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Vishay 37830
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AUD 0.2167
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6 A8 V30 mOhmsP - Channel 350 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V19.3 nCEnhancement Trenchfet
STL45N65M5


STMicroelectronics MOSFET N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh
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STMicroelectronics 37830
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AUD 6.0813
Multiples of: 3000

22.5 A650 V75 mOhmsN - Channel 4 V- 55 C+ 150 C160 WSmd/SmtPowerflat - 4ReelSi1 Channel25 V82 nCEnhancement Mdmesh
SK2302AA


MOSFET N Trench 18V 3.6A 1.3V@ 250uA 80 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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Shikues 37791
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AUD 0.0266
Multiples of: 20

                   
CMKDM8005 TR


MOSFET DUAL P-CHANNEL MOSFET
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Central Semiconductor 37769
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AUD 0.2981
Multiples of: 1

   P - Channel     Smd/SmtSOT - 363Cut TapeSi2 Channel     
SI3437DV-T1-BE3


MOSFET P-CHANNEL 150-V (D-S)
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Vishay 37713
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AUD 0.7327
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1.4 A150 V750 mOhmsP - Channel 4 V- 55 C+ 150 C3.2 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V8 nCEnhancement  
FDMC8032L


MOSFET 40V Dual N-Channel PowerTrench MOSFET
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ON Semiconductor 34920
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AUD 0.82
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20 A40 V23 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C12 WSmd/SmtMLP - 8 3.3X3.3ReelSi2 Channel20 V7.6 nC  Powertrench
SQJ409EP-T1_GE3


MOSFET -40V Vds PowerPAK AEC-Q101 Qualified
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Vishay 34920
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AUD 0.774
Multiples of: 3000

60 A40 V7 mOhmsP - Channel 2 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V170 nC Aec - Q101Trenchfet
2N7002KT1G


MOSFET NFET SOT23 60V 380mA 2.5Ohms
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ON Semiconductor 28033
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AUD 0.0274
Multiples of: 20

380 mA60 V1.6 OhmsN - Channel 1 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.7 nCEnhancement  
SI7116DN-T1-E3


MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
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Vishay 2883
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AUD 1.2266
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel      Trenchfet/Powerpak
BSL308PEH6327XTSA1


Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6
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Infineon 169
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AUD 0.2957
Multiples of: 5

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