MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFZ44NPBF


MOSFET N Trench 55V 49A 4V @ 250uA 17.5 mΩ @ 25A,10V TO-220 (TO-220-3) RoHS
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Infineon 38499
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AUD 0.2384
Multiples of: 5

41 A55 V23 mOhmsN - Channel20 V   83 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V42 nC   
2N7002T


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-523 MOSFETs ROHS
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ElecSuper 35909
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AUD 0.0208
Multiples of: 20

                   
BSS84IXUSA1


MOSFETs Small Signal MOSFET, -60 V
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Infineon 35894
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AUD 0.0644
Multiples of: 1

290 mA60 V5.5 OhmsP - Channel 2 V- 55 C+ 150 C960 mWSMD/SMT Reel , Cut TapeSi1 Channel20 V290 pCEnhancement  
SI3457CDV-T1-E3


MOSFET 30V 5.1A 3.0W 74mohm @ 10V
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Vishay 35859
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AUD 0.2939
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   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
SI3458BDV-T1-E3


MOSFET 60V 4.1A 3.3W 100mohm @ 10V
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Vishay 35813
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AUD 0.627
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   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
SI6968BEDQ-T1-E3


20V 5.2A 22mO@4.5V,6.5A 1W 2PCSNChannel(Common Drain) TSSOP-8 MOSFETs ROHS
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Vishay 35730
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AUD 0.6679
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   N - Channel  - 55 C+ 150 C Smd/SmtTSSOP - 8ReelSi     Trenchfet
TPH4R606NH,L1Q(M


Trans MOSFET N-CH Si 60V 85A 8-Pin SOP Advance
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Toshiba 35713
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AUD 1.1404
Multiples of: 1

                   
AON7400A


MOSFET N Trench 30V 15A 2.5V @ 250uA 7.5 mΩ @ 20A,10V DFN-8 RoHS
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Alpha & Omega 35676
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AUD 0.1414
Multiples of: 5

                   
AO3402


MOSFET N Trench 30V 4A 1.4V @ 250uA 55 mΩ @ 4A,10V SOT-23 RoHS
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PUOLOP 35366
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AUD 0.0284
Multiples of: 20

                   
RK7002BMT116


N-Channel 60 V 250mA (Ta) 200mW (Ta) Surface Mount SST3
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ROHM 28900
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AUD 0.0464
Multiples of: 1

250 mA60 V2.4 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
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