MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTTFS4939NTAG


ON Semiconductor MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 34920
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AUD 0.4112
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14.3 A30 V5.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.21 WSmd/SmtWDFN - 8ReelSi1 Channel 28 nC   
PSMN5R6-60YLX


MOSFET PSMN5R6-60YL/LFPAK/REEL 7" Q1/
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Nexperia 34916
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AUD 0.6899
Multiples of: 1

100 A60 V5.6 mOhmsN - Channel 1.4 V- 55 C+ 175 C167 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V66.8 nCEnhancement  
AP2310GN-HF


MOSFET N Trench 60V 3A 3V @ 250uA 90 mΩ @ 3A,10V SOT-23 (SOT-23-3) RoHS
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APEC 34629
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AUD 0.1502
Multiples of: 5

                   
LN2306LT1G


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 38 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Leshan 34570
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AUD 0.0706
Multiples of: 10

                   
IRFR110TRPBF-BE3


MOSFET 100V N-CH
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Vishay 34547
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AUD 0.6533
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4.3 A100 V540 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V8.3 nCEnhancement  
BSP316PH6327XTSA1


Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
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Infineon 34539
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AUD 0.363
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            Sipmos      
AO3400A


SOT-23-3L MOSFETs ROHS
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JSMSEMI 34454
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AUD 0.0314
Multiples of: 20

                   
DN3545N8-G


Transistor: N-MOSFET; unipolar; 450V; 0.2A; 1.6W; SOT89-3
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Microchip 34435
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AUD 1.2875
Multiples of: 1

                   
2302V


20V 3A 43mΩ 1V N Channel SOT23 MOSFETs ROHS
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HL 34386
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AUD 0.0112
Multiples of: 50

                   
IRF830PbF


MOSFET N Trench 500V 4.5A 4V @ 250uA 1.5 Ω @ 2.7A,10V TO-220 (TO-220-3) RoHS
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Infineon 34367
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AUD 0.6357
Multiples of: 1

                   
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