MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRF630NPBF


MOSFET N Trench 200V 9.3A 4V @ 250uA 300 mΩ @ 5.4A,10V TO-220 (TO-220-3) RoHS
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Infineon 57826
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between Tue. 14 Jul to Fri. 17 Jul
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AUD 0.2912

Multiples of: 5

   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
IRLR8726TRPBF


N-Channel 30 V 86A (Tc) 75W (Tc) Surface Mount D-Pak
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Infineon 38800
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between Tue. 14 Jul to Fri. 17 Jul
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AUD 0.1505

Multiples of: 5

86 A30 V8 mOhmsN - Channel 2.35 V- 55 C+ 175 C75 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
FDMC8032L


MOSFET 40V Dual N-Channel PowerTrench MOSFET
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ON Semiconductor 34920
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between Tue. 30 Jun to Mon. 06 Jul
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AUD 0.74

Multiples of: 1

20 A40 V23 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C12 WSmd/SmtMLP - 8 3.3X3.3ReelSi2 Channel20 V7.6 nC  Powertrench
SI7116DN-T1-E3


MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
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Vishay 34920
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between Tue. 30 Jun to Mon. 06 Jul
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AUD 0.9283

Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel      Trenchfet/Powerpak
IPI041N12N3GAKSA1


Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
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Infineon 34920
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between Tue. 30 Jun to Mon. 06 Jul
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AUD 4.0966

Multiples of: 500

            Optimos 3      
RAL035P01TCR


ROHM Semiconductor MOSFET Trans MOSFET P-CH 12V 3.5A
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ROHM 34672
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between Tue. 30 Jun to Mon. 06 Jul
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AUD 0.2557

Multiples of: 1

3.5 A- 12 V30 mOhmsP - Channel8 V - 55 C+ 150 C1 WSmd/SmtTUMT - 6ReelSi1 Channel8 V22 nCEnhancement  
BSS138WH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
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Infineon 34646
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between Tue. 30 Jun to Mon. 06 Jul
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AUD 0.0942

Multiples of: 1

            Sipmos      
2N7002ET1G-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 34493
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between Tue. 14 Jul to Fri. 17 Jul
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AUD 0.0111

Multiples of: 10

                   
DMP6023LE-13


Diodes Incorporated MOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF
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Diodes Incorporated 27048
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between Tue. 14 Jul to Fri. 17 Jul
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AUD 0.518

Multiples of: 1

- 7 A- 60 V28 mOhmsP - Channel - 3 V- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 4Reel-1 Channel+/- 20 V53.1 nCEnhancement  
BUK9M85-60EX


MOSFET BUK9M85-60E/MLFPAK/REEL 7" Q1/
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Nexperia 56
Ships to you
between Tue. 14 Jul to Fri. 17 Jul
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AUD 3.1014

Multiples of: 1

12.8 A60 V68 mOhmsN - Channel 1.4 V- 55 C+ 175 C31 WSmd/SmtLFPAK33 - 5Cut TapeSi1 Channel10 V4.4 nCEnhancement  
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