MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP4410


30V 15A 6.5mΩ@10V,10A 3W N Channel SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li 38542
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AUD 0.1421
Multiples of: 5

                   
SI3459BDV-T1-E3


Vishay Semiconductors MOSFET 60V 2.9A 3.3W 216mohm 10V
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Vishay 38507
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AUD 0.4466
Multiples of: 1

2.2 A- 60 V216 mOhmsP - Channel20 V - 55 C+ 150 C2 WSmd/SmtTSOP - 6Reel    Enhancement  
IRLR3110ZTRLPBF


Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK T/R
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Infineon 38315
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AUD 1.2981
Multiples of: 1

           Tape And Reel    Enhancement  
DMP31D7L-7


MOSFET MOSFET BVDSS: 25V~30V SOT23 T&R 3K
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Diodes Incorporated 38290
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AUD 0.0624
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NDF10N60ZH


N-Channel 600 V 10A (Tc) 39W (Tc) Through Hole TO-220-2 Full Pack
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ON Semiconductor 38278
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AUD 0.9358
Multiples of: 1

10 A600 V650 mOhmsn - channel  - 55 C+ 150 C39 Wthrough holeTO - 220 - 3Tubesi1 channel30 V47 nC   
SSM3J35CT,L3F


MOSFET Small-signal MOSFET ID=-0.1A VDSS=-20V
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Toshiba 38050
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AUD 0.0808
Multiples of: 1

100 mA20 V4.3 OhmsP - Channel 1 V + 150 C100 mWSmd/SmtSOT - 883 - 3Cut TapeSi1 Channel10 V Enhancement  
NTD5867NLT4G


MOSFET NFET DPAK 60V 18A 43 MOHM
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ON Semiconductor 37927
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AUD 7.3421
Multiples of: 1

20 A60 V39 mOhmsn - channel 1.5 V- 55 C+ 150 C36 Wsmd/smtTO - 252 - 4Cut Tapesi1 channel10 V15 nCenhancement  
SI2301CDS-T1-GE3-ES


20V 3A 1W 58m@4.5V,3A 700mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 37830
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AUD 0.0179
Multiples of: 10

                   
TP0610K-T1-GE3


P-Channel 60 V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 37781
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AUD 0.0689
Multiples of: 10

   P - Channel  - 55 C+ 150 C  TO - 236Reel       
FDN306P


Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
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ON Semiconductor 29100
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AUD 0.207
Multiples of: 3000

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