MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SUD08P06-155L-BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 35041
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AUD 0.8154
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           Cut Tape       
SIRA90DP-T1-RE3


MOSFET 30V Vds TrenchFET PowerPAK SO-8
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Vishay 35035
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AUD 1.0591
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100 A30 V650 uOhmsN - Channel 800 mV- 55 C+ 150 C104 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 16 V , 20 V153 nCEnhancement TrenchFET, PowerPAK
SQ3418AEEV-T1_BE3


MOSFET N-CHANNEL 40V D-S
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Vishay 35017
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AUD 0.6097
Multiples of: 1

8 A40 V26 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V12.4 nCEnhancement TrenchFET
BSS205NH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.5W; SOT23
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Infineon 34920
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AUD 0.0857
Multiples of: 3000

            Optimos 2      
BVSS84LT1G


MOSFET PFET 50V 130MA 10.0
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ON Semiconductor 34920
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AUD 0.1284
Multiples of: 3000

130 mA- 50 V10 OhmsP - Channel20 V - 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Reel   2.2 nC   
IRF5801TRPBF


MOSFET N Trench 200V 600mA 5.5V @ 250uA 2.2 Ω @ 360mA,10V TSOP-6 RoHS
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Infineon 34920
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AUD 0.1733
Multiples of: 3000

600 mA200 V2.2 OhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtTSOP - 6ReelSi1 Channel30 V3.9 nCEnhancement  
SI3932DV-T1-GE3


MOSFET 30V 3.7A DUAL N-CH MOSFET
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Vishay 34920
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AUD 0.3768
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
2N7002


MOSFET N Trench 60V 200mA 1V @ 250uA 7.5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Bourne 31088
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AUD 0.0191
Multiples of: 50

                   
BSS131H6327XTSA1


Infineon Technologies MOSFET N-Ch 240V 100mA SOT-23-3
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Infineon 14550
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AUD 0.068
Multiples of: 3000

         Smd/SmtSOT - 23 - 3Reel       
IRLR2905ZTRPBF


Transistor: N-MOSFET; unipolar; 55V; 60A; 110W; DPAK
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Infineon 3480
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AUD 0.6285
Multiples of: 1

60 A55 V13.5 mOhmsN - Channel 3 V- 55 C+ 175 C110 WSmd/SmtDPAKReelSi1 Channel16 V23 nCEnhancement  
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