MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN31D4UFZ-7B


MOSFETs MOSFET BVDSS: 25V-30V X2-DFN0606-3 T&R 10K
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Diodes Incorporated 35676
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AUD 0.0456
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           Reel , Cut TapeSi      
IPD30N08S2L21ATMA1


Infineon Technologies MOSFET N-Ch 75V 30A DPAK-2 OptiMOS
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Infineon 35505
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AUD 1.1471
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30 A75 V15.9 mOhmsN - Channel 1.2 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V72 nCEnhancementAec - Q101Optimos
TQM138KCX RFG


MOSFETs 60V, 0.36A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 35365
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AUD 0.0566
Multiples of: 1

360 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C400 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.8 nCEnhancementAEC - Q101 
SUD08P06-155L-BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 35041
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AUD 0.8154
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           Cut Tape       
SQ3418AEEV-T1_BE3


MOSFET N-CHANNEL 40V D-S
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Vishay 35017
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AUD 0.6097
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8 A40 V26 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V12.4 nCEnhancement TrenchFET
BVSS84LT1G


MOSFET PFET 50V 130MA 10.0
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ON Semiconductor 34920
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AUD 0.1284
Multiples of: 3000

130 mA- 50 V10 OhmsP - Channel20 V - 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Reel   2.2 nC   
NVS4001NT1G


ON Semiconductor MOSFET
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ON Semiconductor 34920
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AUD 0.1743
Multiples of: 3000

270 mA30 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4 V0.9 nCEnhancementAec - Q101 
DMN3051LDM-7


Diodes Incorporated MOSFET 30V 4A N-CHANNEL
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Diodes Incorporated 34920
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AUD 0.2362
Multiples of: 3000

4 A30 V64 mOhmsN - Channel  - 55 C+ 150 C900 mWSmd/SmtSOT - 26 - 6ReelSi1 Channel20 V Enhancement  
TSM2307CX RFG


MOSFET -30V -3A Single P-Ch annel Power MOSFET
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Taiwan Semiconductor 34920
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AUD 0.3484
Multiples of: 12000

3 A30 V95 mOhmsp channel 3 V- 50 C+ 150 C1.25 Wsmd/smtSOT - 23 - 3Cut Tapesi1 channel20 V15 nCenhancement  
ZXM61N03FTA


MOSFET 30V N-Chnl HDMOS
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Diodes Incorporated 32010
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AUD 0.1786
Multiples of: 3000

1.4 A30 V220 mOhmsN - Channel 1 V- 55 C+ 150 C625 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
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