MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD60R600C6ATMA1


Infineon Technologies MOSFET N-Ch 600V 20.2A DPAK-2
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Infineon 37427
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AUD 0.7421
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7.3 A600 V540 mOhmsN - Channel 2.5 V- 55 C+ 150 C63 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V20.5 nCEnhancement Coolmos
IRFB4410PBF


MOSFET N Trench 100V 88A 4V @ 150uA 10 mΩ @ 58A,10V TO-220 (TO-220-3) RoHS
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Infineon 37277
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AUD 1.2425
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            Hexfet®      
SSM3K7002KFU,LF(T


Transistor: N-MOSFET; unipolar; 60V; 400mA; 150mW; SC70
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Toshiba 36981
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AUD 0.0867
Multiples of: 5

                   
TPH4R606NH,L1Q(M


Trans MOSFET N-CH Si 60V 85A 8-Pin SOP Advance
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Toshiba 36979
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AUD 0.7581
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SI3483CDV-T1-BE3


MOSFET P-CHANNEL 30-V (D-S)
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Vishay 36927
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AUD 0.6724
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8 A30 V34 mOhmsP - Channel 1 V- 55 C+ 150 C4.2 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V11.5 nCEnhancement  
AO3400A


SOT-23-3L MOSFETs ROHS
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JSMSEMI 36530
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AUD 0.0286
Multiples of: 20

                   
IRL540NSTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
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Infineon 35696
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AUD 1.194
Multiples of: 800

36 A100 V63 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel16 V49.3 nC   
PMGD290XN,115


Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP
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Nexperia 31026
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AUD 0.1199
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860 mA20 V350 mOhmsN - Channel 500 mV- 55 C+ 150 C0.41 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.72 nCEnhancement  
DMP2123L-7


P-Channel 20 V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 8380
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AUD 0.1195
Multiples of: 5

3 A20 V72 mOhmsP - Channel 600 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V7.3 nCEnhancement  
BSS84


null 130mA 225mW 4.5@4.5V,0.15A 800mV@250uA SOT-23 MOSFETs ROHS
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Siliup 5335
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AUD 0.0099
Multiples of: 50

                   
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