MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML6402TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 34565
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AUD 0.0852
Multiples of: 5

                   
SK3400


MOSFET N Trench 30V 5.8A 1.5V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Shikues 34454
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AUD 0.0521
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FDMB2307NZ


Mosfet Array 2 N-Channel (Dual) Common Drain 800mW Surface Mount 6-MLP (2x3)
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ON Semiconductor 34351
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AUD 0.5704
Multiples of: 1

18 A20 V16.5 mOhmsn - channel 1.5 V + 150 C2.2 Wsmd/smtMLP 2 x 3Reelsi2 channel 28 nC  powertrench
BSL215CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
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Infineon 34249
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AUD 0.2813
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            Optimos 2      
PJA3400_R1_00001


MOSFET 30V N-Channel Enhancement Mode MOSFET
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Panjit 34200
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AUD 0.11
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4.9 A30 V38 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V5.7 nCEnhancement  
IRLR7843TR(UMW)


TO-252 MOSFETs ROHS
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Youtai 34168
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AUD 0.2118
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IAUZ40N06S5N050ATMA1


N-Channel 60V 40A (Tj) 71W (Tc) Surface Mount PG-TSDSON-8-33
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Infineon 34110
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AUD 0.8707
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          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
TP2510N8


Trans MOSFET P-CH Si 100V 0.48A 4-Pin(3+Tab) SOT-89
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Microchip 34094
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AUD 2.3929
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480 mA100 V3.5 OhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel20 V Enhancement  
NDD60N360U1T4G


ON Semiconductor MOSFET NFET DPAK 600V 114A 360MO
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ON Semiconductor 33950
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AUD 1.8961
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11 A600 V360 mOhmsN - Channel     Smd/SmtDPAK - 3ReelSi      
Hot IRF100B201


mosfet n trench 100v 192a 4v @ 250ua 4.2 m @ 115a,10v to-220 (to-220-3) rohs
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Infineon 28784
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AUD 0.7984
Multiples of: 1

192 A100 V4.2 mOhmsN - Channel 2 V- 55 C+ 175 C441 WThrough HoleTO - 220 - 3TubeSi +/- 20 V170 nCEnhancement  
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