MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STN1NK80Z


Transistor: N-MOSFET; unipolar; 800V; 160mA; 2.5W; SOT223
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STMicroelectronics 54320
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AUD 0.2857
Multiples of: 4000

            Supermesh      
FDS4897AC


Transistor: N/P-MOSFET; unipolar; 40/-40V; 6.1/5.2A; 2W; SO8
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ON Semiconductor 36375
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AUD 0.17
Multiples of: 2500

            powertrench®      
IPD30N08S2L21ATMA1


Infineon Technologies MOSFET N-Ch 75V 30A DPAK-2 OptiMOS
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Infineon 36142
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AUD 1.1751
Multiples of: 1

30 A75 V15.9 mOhmsN - Channel 1.2 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V72 nCEnhancementAec - Q101Optimos
ZXMS6006DGTA


MOSFET 60V N-CH INTELLIFET 60V VDS Mosfet
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Diodes Incorporated 36053
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AUD 0.8713
Multiples of: 1

2.8 A60 V100 mOhmsN - Channel 700 mV- 40 C+ 150 C3 WThrough HoleSOT - 223ReelSi1 Channel5 V Enhancement Intellifet
IRFR3707ZTRPBF


MOSFET N Trench 30V 56A (Tc) 2.25V @ 25uA 9.5 mΩ @ 15A,10V TO-252-2 (DPAK) RoHS
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Infineon 35890
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AUD 0.5397
Multiples of: 1

56 A30 V9.5 mOhmsN - Channel 2.35 V- 55 C+ 175 C50 WSmd/SmtDPAKReelSi1 Channel20 V9.6 nCEnhancement  
SI6926ADQ-T1-E3


MOSFET 20V Vds 8V Vgs TSSOP-8
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Vishay 35853
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AUD 0.7089
Multiples of: 1

         Smd/SmtTSSOP - 8Cut TapeSi     Trenchfet
2N7000


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92
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Diotec 35663
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AUD 0.0559
Multiples of: 1

200 mA60 V5 OhmsN - Channel 800 mV + 150 C350 mWThrough HoleTO - 92 - 2Ammo PackSi1 Channel- 20 V , + 20 V Enhancement 2N7000
Hot BSS159NH6906XTSA1


Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
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Infineon 35422
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AUD 0.3859
Multiples of: 1

           Tape And Reel    Depletion  
PSMN102-200Y,115


NXP Semiconductors MOSFET Trans MOSFET N-CH 200V 21.5A 5-Pin
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Nexperia 10185
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AUD 2.0605
Multiples of: 1

21.5 A200 V102 mOhmsN - Channel  - 55 C+ 150 C113 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V Enhancement  
DMN3404L-7


MOSFET N-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 853
Ships to you
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AUD 0.0561
Multiples of: 10

4.6 A30 V28 mOhmsN - Channel 1 V- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V11.3 nCEnhancement  
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