MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDV304P


Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R
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ON Semiconductor 1958430
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AUD 0.0395
Multiples of: 3000

460 mA25 V1.1 OhmsP - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V Enhancement  
AP4410


30V 15A 6.5mΩ@10V,10A 3W N Channel SOP-8 MOSFETs ROHS
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Quan Li 38542
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AUD 0.1421
Multiples of: 5

                   
NDF10N60ZH


N-Channel 600 V 10A (Tc) 39W (Tc) Through Hole TO-220-2 Full Pack
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ON Semiconductor 38278
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AUD 0.9952
Multiples of: 1

10 A600 V650 mOhmsn - channel  - 55 C+ 150 C39 Wthrough holeTO - 220 - 3Tubesi1 channel30 V47 nC   
NDT014


MOSFET N-Channel FET Enhancement Mode
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ON Semiconductor 38245
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AUD 0.646
Multiples of: 1

2.7 A60 V200 mOhmsN - Channel  - 65 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement  
SSM3J35CT,L3F


MOSFET Small-signal MOSFET ID=-0.1A VDSS=-20V
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Toshiba 38050
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AUD 0.0808
Multiples of: 1

100 mA20 V4.3 OhmsP - Channel 1 V + 150 C100 mWSmd/SmtSOT - 883 - 3Cut TapeSi1 Channel10 V Enhancement  
NTD5867NLT4G


MOSFET NFET DPAK 60V 18A 43 MOHM
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ON Semiconductor 37927
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AUD 7.8083
Multiples of: 1

20 A60 V39 mOhmsn - channel 1.5 V- 55 C+ 150 C36 Wsmd/smtTO - 252 - 4Cut Tapesi1 channel10 V15 nCenhancement  
L2N7002LT1G-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 37834
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AUD 0.0115
Multiples of: 10

                   
SI2301CDS-T1-GE3-ES


20V 3A 1W 58m@4.5V,3A 700mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 37830
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AUD 0.0179
Multiples of: 10

                   
BSZ520N15NS3 G


MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
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Infineon 37655
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AUD 0.9952
Multiples of: 1

21 A150 V42 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V12 nCEnhancement Optimos
SI1539CDL-T1-GE3


Vishay Semiconductors MOSFET 30 Volts 0.7 Amps 0.34 Watts
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Vishay 1644
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AUD 0.1809
Multiples of: 5

700 mA30 V323 mOhms , 740 mOhmsN - Channel, P - Channel20 V1.2 v , 2.5 V- 55 C+ 150 C340 mWSmd/SmtSC - 70 - 6ReelSi2 Channel20 V1 nCEnhancement Trenchfet
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