MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMC083NP10M5L


MOSFET MV5_100V_N_P_IN DUALS AND SINGLE
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ON Semiconductor 37305
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AUD 0.682
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4.5 A , 3.6 A100 V83 mOhmsN - Channel, P - Channel - 20 V , + 20 V4 V3 n C , 8.4 n C- 55 CSMD/SMT Cut Tape , ReelSi2 Channel131 mOhms3 V+ 150 C3.1 WEnhancement
DMG6602SVTX-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 36577
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AUD 0.1619
Multiples of: 1

3.4 A , 2.8 A30 V60 mOhms , 95 mOhmsN - Channel, P - Channel 500 mV , 1.8 V- 55 C+ 150 C1.12 WSMD/SMTTSOT - 26 - 6Reel , Cut TapeSi2 Channel- 20 V , 20 V13 nC , 9 nCEnhancement  
AP2310GN-HF


MOSFET N Trench 60V 3A 3V @ 250uA 90 mΩ @ 3A,10V SOT-23 (SOT-23-3) RoHS
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APEC 36117
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AUD 0.1356
Multiples of: 5

                   
SI2319DS-T1-E3


MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
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Vishay 36072
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AUD 0.4039
Multiples of: 1

3.0 A40 V82 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTO - 236 - 3ReelSi1 Channel- 10 V17 nCEnhancement Trenchfet
LP2305DSLT1G


MOSFET P Trench 12V 4A 800mV @ 250uA 68 mΩ @ 3.5A,4.5V SOT-23 (SOT-23-3) RoHS
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Leshan 34376
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AUD 0.0395
Multiples of: 10

                   
SI2300


20V 6A 22m@4.5V,5A 1.25W 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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GOODWORK 31961
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AUD 0.0189
Multiples of: 50

                   
TN2404K-T1-E3


MOSFET 240V 0.2A 4.0Ohm
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Vishay 29826
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AUD 0.4887
Multiples of: 1

200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.87 nCEnhancement Trenchfet
CRST055N08N


MOSFET N Trench 85V 120A (Tc) 4V @ 250uA 5.5 mΩ @ 50A,10V TO-220 RoHS
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CRMICRO 28882
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AUD 0.4066
Multiples of: 1

                   
Si2303CDS-T1-E3


MOSFET 30V 2.7A 2.3W 190mohm @ 10V
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Vishay 23280
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AUD 0.1781
Multiples of: 3000

2.7 A30 V190 mOhmsP - Channel 1 V- 55 C+ 150 C2.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V4 nCEnhancement Trenchfet
AO3401A


SOT23 MOSFETs ROHS
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TECH PUBLIC 22581
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AUD 0.0357
Multiples of: 20

                   
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First...7172737475...

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