MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB117N20NFDATMA1


Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3
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Infineon 42544
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AUD 5.5504
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            Optimos Fd      
IPL60R360P6SATMA1


Infineon Technologies MOSFET N-Ch 600V 11.3A ThinPAK 5x6
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Infineon 42324
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AUD 1.1737
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11.3 A600 V360 mOhmsN - Channel 4 V- 40 C+ 150 C89.3 WSmd/SmtTH in PAK 5X6ReelSi1 Channel30 V22 nC  Coolmos
FDMS7692


MOSFET PT7 30/20V Nch PowerTrench
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ON Semiconductor 42218
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AUD 0.3612
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14 A30 V6.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
SPS01N60C3


MOSFET COOL MOS POWER TRANSISTOR
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Infineon 42195
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AUD 0.5874
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800 mA600 V6 OhmsN - Channel 2.1 V- 55 C+ 150 C11 WThrough HoleTO - 251TubeSi1 Channel20 V3.9 nCEnhancement Coolmos
EMH2407-TL-H


ON Semiconductor MOSFET NCHNCH 4V DRIVE SERIES
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ON Semiconductor 42026
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AUD 0.3046
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6 A20 V25 mOhmsn - channel     smd/smtEMH8 - 8Reelsi      
CPH3456-TL-W


MOSFET NCH 1.8V DRIVE SERIE
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ON Semiconductor 41991
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AUD 0.2357
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3.5 A20 V54 mOhmsn - channel 400 mV + 150 C1 Wsmd/smtSOT - 23 - 3Cut Tapesi1 channel12 V2.8 nCenhancement  
BR8205


MOSFET 2 N Channel（Double）Common Drain 20V 6A 1.2V @ 250uA 24 mΩ @ 6A,4.5V SOT23-6 RoHS
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Blue Rocket 41969
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AUD 0.0347
Multiples of: 10

                   
IRF1310NSTRLPBF


N-Channel 100 V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK
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Infineon 41904
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AUD 1.217
Multiples of: 800

42 A100 V36 mOhmsN - Channel20 V   3.8 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V73.3 nC   
DMN1008UFDF-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 41882
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AUD 0.1851
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12.2 A12 V6.6 mOhmsN - Channel 300 mV- 55 C+ 150 C1.7 WSmd/SmtU - DFN2020 - 6 Si1 Channel4.5 V13.6 nCEnhancement  
SI2303CDS-T1-BE3


MOSFET 30V P-CHANNEL (D-S)
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Vishay 41767
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AUD 0.2942
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2.7 A30 V190 mOhmsP - Channel 3 V- 55 C+ 150 C2.3 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V2 nCEnhancement  
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