MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQP7P06


Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB
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ON Semiconductor 39679
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AUD 1.0175
Multiples of: 1

            Qfet®      
FDMS8020


MOSFET 30V 42A 2.5mohms NCh PowerTrench MOSFET
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ON Semiconductor 39642
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AUD 0.9253
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26 A30 V2.5 mOhmsn - channel   + 150 C65 Wsmd/smtPOWER 56Reelsi     powertrench
RJP020N06T100


60V 2A 165mO@4.5V,2A 500mW N Channel SOT-89-3 MOSFETs ROHS
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ROHM 39496
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AUD 0.5414
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   N - Channel     Through HoleMPT3Reel       
NDS0610-G


MOSFET FET -60V 10.0 MOHM
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ON Semiconductor 39262
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AUD 0.154
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           Cut Tape       
Hot IRFP260MPBF


MOSFET N Trench 200V 50A 4V @ 250uA 40 mΩ @ 28A,10V TO-247 (AC) RoHS
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Infineon 38285
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AUD 0.9023
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   N - Channel  - 55 C+ 175 C Through HoleTO - 247AC - 3Tube       
SI2333


MOSFET P Trench 12V 7.1A (Tc) 1V @ 250uA 35 mΩ @ 5.1A,4.5V SOT-23 RoHS
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Bourne 37257
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AUD 0.0532
Multiples of: 10

                   
CJ3139K (SOT-723)


MOSFET P Trench 20V 660mA 1.1V @ 250uA 520 mΩ @ 1A,4.5V SOT-723 RoHS
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Changjing Electronics Technology 35637
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AUD 0.0287
Multiples of: 20

                   
SQ2318CES-T1_GE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 32031
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AUD 0.1776
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7 A40 V31 mOhmsN - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3 Si1 Channel- 20 V , + 20 V8.9 nCEnhancement  
AO3404A


MOSFET N Trench 30V 5.8A 3V @ 250uA 28 mΩ @ 5.8A,10V SOT-23 RoHS
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Youtai 29953
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AUD 0.0268
Multiples of: 20

                   
DMN33D8LT-13


MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
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Diodes Incorporated 0
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AUD 0.0389
Multiples of: 5

200 mA30 V5 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V550 pCEnhancement  
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