MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSG0811ND


Infineon Technologies MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 43782
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AUD 2.0444
Multiples of: 1

50 A25 V2.4 mOhms , 700 uOhmsN - Channel 1.2 V- 55 C+ 150 C6.25 WSmd/SmtTISON - 8ReelSi2 Channel16 V8.4 nC , 29 nCEnhancement Optimos
NDS0605


MOSFET P-Channel FET Enhancement Mode
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ON Semiconductor 43650
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AUD 0.0754
Multiples of: 3000

180 mA60 V5 OhmsP - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
FDN327N


Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
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ON Semiconductor 43650
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AUD 0.1554
Multiples of: 3000

            Powertrench®      
RUF015N02TL


N-Channel 20 V 1.5A (Ta) 800mW (Ta) Surface Mount TUMT3
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ROHM 43650
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AUD 0.2164
Multiples of: 3000

1.5 A20 V180 mOhmsN - Channel 300 mV- 55 C+ 150 C0.8 WSmd/SmtTUMT - 3ReelSi1 Channel4.5 V1.8 nCEnhancement  
BSC035N04LSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 92A; 69W; PG-TDSON-8
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Infineon 43650
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AUD 0.6272
Multiples of: 5000

            Optimos 3      
STD4NK50ZT4


Transistor: N-MOSFET; unipolar; 500V; 1.9A; 45W; DPAK
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STMicroelectronics 43650
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AUD 0.7457
Multiples of: 2500

            Supermesh      
Hot IPB019N08N3GATMA1


Infineon Technologies MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
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Infineon 43650
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AUD 4.1978
Multiples of: 1000

180 A80 V1.6 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V206 nCEnhancement Optimos
DMC3021LSDQ-13


MOSFET MOSFET BVDSS 30V Comp Pair
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Diodes Incorporated 43570
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AUD 0.4212
Multiples of: 1

8.5 A , - 7 A30 v , - 30 V14 mOhms , - 30 mOhmsN - Channel, P - Channel20 V1 v , - 1 V- 55 C+ 100 C2.5 WSmd/SmtSO - 8ReelSi2 Channel20 V16.1 nC , 21.1 nCEnhancementAec - Q101 
BSZ0704LSATMA1


N-Channel 60V 11A (Ta), 40A (Tc) 2.1W (Ta), 36W (Tc) Surface Mount PG-TSDSON-8-FL
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Infineon 43464
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AUD 0.4812
Multiples of: 1

          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
STD3NK80ZT4


Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK
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STMicroelectronics 1378
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AUD 1.0322
Multiples of: 1

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