MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS169 H6906


Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3
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Infineon 42942
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AUD 0.5385
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90 mA100 V12 OhmsN - Channel 2.9 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V2.8 nCDepletion  
STN3N40K3


Transistor: N-MOSFET; unipolar; 400V; 1A; 3.3W; SOT223
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STMicroelectronics 42680
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AUD 0.3407
Multiples of: 4000

            Supermesh      
BSS119N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 42601
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AUD 0.1387
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190 mA100 V2.406 OhmsN - Channel 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancement  
AP2003


20V 3A 23mΩ@4.5V,3A 800mW 1PCSN-Channel&1PCSP-Channel SOT-23-6 MOSFETs ROHS
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Quan Li 42408
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AUD 0.0914
Multiples of: 10

                   
SPS01N60C3


MOSFET COOL MOS POWER TRANSISTOR
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Infineon 42195
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AUD 0.5874
Multiples of: 1137

800 mA600 V6 OhmsN - Channel 2.1 V- 55 C+ 150 C11 WThrough HoleTO - 251TubeSi1 Channel20 V3.9 nCEnhancement Coolmos
IRF9Z24NPBF


MOSFET P Trench 55V 12A 4V @ 250uA 175 mΩ @ 7.2A,10V TO-220 (TO-220-3) RoHS
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Infineon 42127
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AUD 0.2739
Multiples of: 5

   P - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
SI3900DV-T1-E3


MOSFET 20V N-CHANNEL (D-S) TRENCH DU
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Vishay 42052
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AUD 1.4473
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   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
EMH2407-TL-H


ON Semiconductor MOSFET NCHNCH 4V DRIVE SERIES
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ON Semiconductor 42026
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AUD 0.2741
Multiples of: 1

6 A20 V25 mOhmsn - channel     smd/smtEMH8 - 8Reelsi      
AOD4185(UMW)


TO-252 MOSFETs ROHS
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Youtai 41748
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AUD 0.1622
Multiples of: 5

                   
AO3404A


MOSFET N Trench 30V 5.8A 3V @ 250uA 28 mΩ @ 5.8A,10V SOT-23 RoHS
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Youtai 41535
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AUD 0.0318
Multiples of: 20

                   
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