MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
30N06


TO-252 MOSFETs ROHS
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GOODWORK 50333
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AUD 0.0864
Multiples of: 5

                   
SI3900DV-T1-E3


MOSFET 20V N-CHANNEL (D-S) TRENCH DU
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Vishay 43226
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AUD 1.4473
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   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
SI3458BDV-T1-E3


MOSFET 60V 4.1A 3.3W 100mohm @ 10V
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Vishay 43165
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AUD 0.627
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
BSS169 H6906


Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3
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Infineon 42942
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AUD 0.5385
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90 mA100 V12 OhmsN - Channel 2.9 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V2.8 nCDepletion  
STN3NF06L


Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223
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STMicroelectronics 42680
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AUD 0.2714
Multiples of: 4000

   N Channel               
SI2305


MOSFET SOT23 RoHS
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TWGMC 39692
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AUD 0.0375
Multiples of: 20

                   
IRFML8244TRPBF


MOSFET N Trench 25V 5.8A 2.35V @ 10uA 24 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 32010
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AUD 0.117
Multiples of: 3000

                   
UMW1N60G


MOSFET N Trench 600V 1A (Tc) 4V @ 250uA 11 Ω @ 500mA,10V SOT-223 RoHS
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Youtai 27543
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AUD 0.069
Multiples of: 5

                   
DMN24H11DS-7


MOSFET MOSFET BVDSS: 101V-250V
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Diodes Incorporated 1191
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AUD 0.276
Multiples of: 1

270 mA240 V11 OhmsN - Channel 1 V- 55 C+ 150 C1.2 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V3.7 nCEnhancement  
FDMS7658AS


MOSFET PT7 30/20V Nch PowerTrench SyncFET
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ON Semiconductor 0
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AUD 0.7791
Multiples of: 3000

49 A30 V2 mOhmsN - Channel  - 55 C+ 150 C89 WSmd/SmtPOWER - 56ReelSi1 Channel20 V   Powertrench Syncfet
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