MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD85P04P407ATMA2


P-Channel 40V 85A (Tc) 88W (Tc) Surface Mount PG-TO252-3-313
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Infineon 44407
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AUD 1.2968
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          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®Mosfet (Metal Oxide)      
AO3401A


30V 4.5A 40m@10V,4.5A 1.4W 1V@250uA 1PCSPChannel SOT-23-3L MOSFETs ROHS
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ElecSuper 44135
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AUD 0.0407
Multiples of: 20

                   
SI2302


20V 3.5A 350mW 36m@10V,3.5A 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 44032
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AUD 0.0166
Multiples of: 50

                   
SIR186LDP-T1-RE3


MOSFET N-CHANNEL 60-V (D-S)
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Vishay 43936
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AUD 0.6338
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80.3 A60 V4.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C57 WSMD/SMTPOWERPAK SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V31.5 nCEnhancement TrenchFET
7002-2N7002K


SOT-23 MOSFETs ROHS
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GOODWORK 43892
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AUD 0.0108
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BSG0811ND


Infineon Technologies MOSFET
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Infineon 43782
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AUD 2.0444
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50 A25 V2.4 mOhms , 700 uOhmsN - Channel 1.2 V- 55 C+ 150 C6.25 WSmd/SmtTISON - 8ReelSi2 Channel16 V8.4 nC , 29 nCEnhancement Optimos
DMN1008UFDF-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 41882
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AUD 0.1851
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12.2 A12 V6.6 mOhmsN - Channel 300 mV- 55 C+ 150 C1.7 WSmd/SmtU - DFN2020 - 6 Si1 Channel4.5 V13.6 nCEnhancement  
Si2333CDS-T1-GE3


P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 39624
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AUD 0.1665
Multiples of: 5

7.1 A12 V35 mOhmsP - Channel 400 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V15 nCEnhancement Trenchfet
BSC196N10NSGATMA1


Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
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Infineon 14854
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AUD 0.8909
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            Optimos 2      
BUK6D81-80EX


MOSFET BUK6D81-80ESOT1220SOT1220
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Nexperia 0
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AUD 0.1868
Multiples of: 1

9.8 A80 V81 mOhmsN - Channel 1.3 V- 55 C+ 175 C18.8 WSmd/SmtDfn2020md - 6Cut TapeSi1 Channel20 V14.9 nCEnhancementAec - Q101 
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