MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD13NM60N


mosfet n trench 600v 11a (tc) 5v @ 250ua 380 m @ 5.5a,10v to-252-2 (dpak) rohs
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STMicroelectronics 46075
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AUD 1.7164
Multiples of: 2500

                   
SI2309S


SOT-23 MOSFETs ROHS
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Bourne 45900
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AUD 0.0611
Multiples of: 10

                   
8205A


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 45747
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AUD 0.0429
Multiples of: 10

                   
RTF025N03FRATL


MOSFET Nch 30V Vds 2.5A 0.07Rds(on) 3.7Qg
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ROHM 45405
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AUD 0.2501
Multiples of: 1

2.5 A30 V48 mOhmsN - Channel 500 mV + 150 C800 mWSmd/SmtTUMT - 3Cut TapeSi1 Channel4.5 V3.7 nCEnhancementAec - Q101 
STW56N60M2-4


STMicroelectronics MOSFET
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STMicroelectronics 45396
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AUD 9.8627
Multiples of: 600

52 A600 V45 mOhmsn - channel 2 V + 150 C350 Wthrough holeTO - 247 - 4Reelsi1 channel25 V91 nCenhancement mdmesh
SQ4940AEY-T1_BE3


MOSFET Dual N-CHANNEL 40 V
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Vishay 45009
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AUD 0.7635
Multiples of: 1

           Cut Tape       
TPNTA4153NT1G


20V 800mA 180mΩ@4.5V,550mA 280mW 750mV@250uA 15pF@16V N Channel 120pF@16V +150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 44893
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AUD 0.0384
Multiples of: 10

                   
IPG20N06S2L35ATMA1


MOSFET N-CHANNEL_55/60V
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Infineon 44830
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AUD 0.9851
Multiples of: 1

   Dual N Channel      TDSON - 8Reel       
2N7002KT1G


MOSFET NFET SOT23 60V 380mA 2.5Ohms
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ON Semiconductor 43514
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AUD 0.0318
Multiples of: 20

380 mA60 V1.6 OhmsN - Channel 1 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.7 nCEnhancement  
BSS214NH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
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Infineon 29100
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AUD 0.0718
Multiples of: 3000

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