MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002WT1G


MOSFET SMALL SIGNAL MOSFET 6.8V LO C
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ON Semiconductor 73778
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AUD 0.0299
Multiples of: 20

310 mA60 V1.6 OhmsN - Channel  - 55 C+ 150 C280 mWSmd/SmtSC - 70 - 3Cut TapeSi1 Channel20 V Enhancement  
SPD08P06P G


TO-252-3 MOSFETs ROHS
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Infineon 43711
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AUD 0.4243
Multiples of: 1

8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252ReelSi1 Channel20 V- 13 nCEnhancementAec - Q101Sipmos
STD4NK50ZT4


Transistor: N-MOSFET; unipolar; 500V; 1.9A; 45W; DPAK
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STMicroelectronics 43650
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AUD 0.6046
Multiples of: 2500

            Supermesh      
LND150K1-G


MOSFET N Trench 500V 13mA (Tj) 1000 Ω @ 500uA,0V SOT-23 (SOT-23-3) RoHS
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Microchip 43650
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AUD 0.7377
Multiples of: 3000

13 mA500 V1 kOhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23ReelSi1 Channel20 V Depletion  
SIA910EDJ-T1-GE3


MOSFET 12V 4.5A/4.5A N-CH DUAL MOSFET
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Vishay 43650
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AUD 1.2589
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SC - 70 - 6Reel       
8205A


SOT-23-6L MOSFETs ROHS
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ALJ 43611
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AUD 0.0338
Multiples of: 20

                   
PMV65XP,215


P-Channel 20 V 2.8A (Ta) 480mW (Ta) Surface Mount TO-236AB
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Nexperia 43286
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AUD 0.0746
Multiples of: 5

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
IRLML2502TRPBF


N-Channel 20 V 4.2A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23
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Infineon 43122
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AUD 0.3564
Multiples of: 1

   N - Channel     Smd/SmtSOT - 23Reel       
BSZ180P03NS3EGATMA1


MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
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Infineon 4850
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AUD 0.3827
Multiples of: 5000

39.6 A30 V13.5 mOhmsP - Channel 3.1 V- 55 C+ 150 C40 WSmd/SmtTSDSON - 8Cut TapeSi1 Channel25 V30 nCEnhancement  
IPD350N06LGBTMA1


Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO252-3
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Infineon 2425
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AUD 0.3966
Multiples of: 2500

            Optimos 3      
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