MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STW56N60M2-4


STMicroelectronics MOSFET
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STMicroelectronics 45396
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AUD 9.8627
Multiples of: 600

52 A600 V45 mOhmsn - channel 2 V + 150 C350 Wthrough holeTO - 247 - 4Reelsi1 channel25 V91 nCenhancement mdmesh
DMG6602SVTX-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 45365
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AUD 0.1414
Multiples of: 1

3.4 A , 2.8 A30 V60 mOhms , 95 mOhmsN - Channel, P - Channel 500 mV , 1.8 V- 55 C+ 150 C1.12 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V13 nC , 9 nCEnhancement  
DMN3731U-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 45152
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AUD 0.0506
Multiples of: 1

           Cut Tape       
SQ4940AEY-T1_BE3


MOSFET Dual N-CHANNEL 40 V
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Vishay 45009
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AUD 0.7635
Multiples of: 1

           Cut Tape       
FQP7P06


Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB
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ON Semiconductor 44917
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AUD 1.1841
Multiples of: 1

            Qfet®      
TPNTA4153NT1G


20V 800mA 180mΩ@4.5V,550mA 280mW 750mV@250uA 15pF@16V N Channel 120pF@16V +150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 44893
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AUD 0.0384
Multiples of: 10

                   
SPD02N80C3ATMA1


Infineon Technologies MOSFET
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Infineon 44611
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AUD 0.6897
Multiples of: 1

2 A800 V2.7 OhmsN - Channel 2.1 V- 55 C+ 150 C42 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V12 nCEnhancement Coolmos
SQJ500AEP-T1_BE3


MOSFET N and P CH 40V D-S
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Vishay 44573
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AUD 1.0587
Multiples of: 1

30 A40 V9.2 mOhmsN - Channel, P - Channel - 20 V , + 20 V25.5 n C , 30.2 n C- 55 C+ 175 CSMD/SMTPOWERPAK - SO - 8 - 4Trenchfet , Cut Tape , Reel , ReelSi2 Channel27 mOhms2.5 V48 WEnhancement 
FDMS7692


MOSFET PT7 30/20V Nch PowerTrench
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ON Semiconductor 8730
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AUD 0.1061
Multiples of: 3000

14 A30 V6.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
PSMN4R0-40YS,115


NXP Semiconductors MOSFET N-CH 40V 4.2 mOhm Standard MOSFET
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Nexperia 0
6 to 16 Weeks Calender.png

AUD 1.0057
Multiples of: 1

100 A40 V4 mOhmsN - Channel    106 WSmd/SmtLFPAK - 4ReelSi1 Channel     
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