MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDS0610


Transistor: P-MOSFET; unipolar; -60V; -0.12A; 0.36W; SOT23
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 81480
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AUD 0.0532
Multiples of: 3000

   P Channel               
NDS352AP


Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 46560
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AUD 0.1806
Multiples of: 3000

                   
IRLM120ATF


Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R
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ON Semiconductor 46560
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AUD 0.531
Multiples of: 1

2.3 A100 V220 mOhmsn - channel  - 55 C+ 150 C2.7 Wsmd/smtSOT - 223 - 3Reel 1 channel20 V enhancement  
IRFR6215TRPBF


MOSFET P Trench 150V 13A (Tc) 4V @ 250uA 295 mΩ @ 6.6A,10V TO-252-2 (DPAK) RoHS
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Infineon 46560
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AUD 0.7836
Multiples of: 2000

   P - Channel  - 55 C+ 175 C Smd/SmtDPAKReel       
DMN1019USN-13


Diodes Incorporated MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
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Diodes Incorporated 46551
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AUD 0.1806
Multiples of: 1

9.3 A12 V41 mOhmsN - Channel 0.53 V- 55 C+ 150 C1.2 WSmd/SmtSC - 59 - 3ReelSi1 Channel8 V50.6 nCEnhancement Dmn10
SIR122DP-T1-RE3


MOSFET 80V Vds 20V Vgs PowerPAK SO-8
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Vishay 46504
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AUD 0.5927
Multiples of: 1

59.6 A80 V7.4 mOhmsN - Channel 2 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V44 nCEnhancement Trenchfet, Powerpak
SPD08P06P G


TO-252-3 MOSFETs ROHS
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Infineon 46331
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AUD 0.4749
Multiples of: 1

8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252ReelSi1 Channel20 V- 13 nCEnhancementAec - Q101Sipmos
FDMS3600S


MOSFET 25V Dual N-Channel PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 46307
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AUD 2.0099
Multiples of: 1

15 A , 30 A25 V5.6 mOhms , 1.6 mOhmsn - channel 1.8 v , 1.5 V- 55 C+ 150 C2.2 w , 2.5 Wsmd/smtPOWER 56Reelsi2 channel20 V19 nC  power stage
FDS8880


Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
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ON Semiconductor 46075
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AUD 0.4797
Multiples of: 2500

            Powertrench®      
IRF9358TRPBF


Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
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Infineon 42680
Ships to you
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AUD 0.7353
Multiples of: 4000

9.2 A30 V13 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V19 nC   
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