MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ4940AEY-T1_BE3


MOSFET Dual N-CHANNEL 40 V
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Vishay 45009
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AUD 0.7635
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           Cut Tape       
SI2306BDS-T1-E3


MOSFET 30V 4.0A 0.75W
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Vishay 44770
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AUD 0.2931
Multiples of: 5

3.16 A30 V47 mOhmsN - Channel 1 V- 55 C+ 150 C0.75 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3 nCEnhancement Trenchfet
SQJ500AEP-T1_BE3


MOSFET N and P CH 40V D-S
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Vishay 44573
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AUD 1.0587
Multiples of: 1

30 A40 V9.2 mOhms , 27 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 175 C48 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi2 Channel- 20 V , 20 V25.5 nC , 30.2 nCEnhancement TrenchFET
HL2304


30V 3.6A 60m@10V,3.6A 1W 2.2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 44523
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AUD 0.0314
Multiples of: 20

                   
IPD053N08N3GATMA1


Infineon Technologies MOSFET
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Infineon 44444
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AUD 1.4363
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90 A80 V5.3 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V52 nCEnhancement Optimos
TPZXMP3A13FTA


SOT-23 MOSFETs ROHS
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TECH PUBLIC 44435
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AUD 0.066
Multiples of: 10

                   
2N7002KT7G


MOSFET NFET SOT23 60V 115MA 7MO
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ON Semiconductor 44135
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AUD 0.0809
Multiples of: 3500

300 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
IRL3713PBF


MOSFET N Trench 30V 260A 2.5V @ 250uA 3 mΩ @ 38A,10V TO-220 (TO-220-3) RoHS
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Infineon 44135
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AUD 1.7161
Multiples of: 1

200 A30 V4 mOhmsN - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V75 nC   
SI2305


MOSFET P Trench 20V 4.2A 500mV @ 250uA（Min） 65 mΩ @ 4.2A,4.5V SOT23-3 RoHS
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KEXIN 41457
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AUD 0.031
Multiples of: 20

                   
AP3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 32 mΩ @ 5.8A,10V SOT23 RoHS
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Quan Li 41263
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AUD 0.0604
Multiples of: 20

                   
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