MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP5N10S


100V 5A 115mΩ@10V,3A 5W N Channel SOT-23-3L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li 68957
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AUD 0.0826
Multiples of: 10

                   
AO3402


MOSFET SOT23 RoHS
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TWGMC 59984
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AUD 0.0332
Multiples of: 10

                   
TM15N06SI


60V 15A 36m SOT-89-3L MOSFETs ROHS
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Tritech-MOS 44794
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AUD 0.075
Multiples of: 10

                   
IRF9Z24NPBF


MOSFET P Trench 55V 12A 4V @ 250uA 175 mΩ @ 7.2A,10V TO-220 (TO-220-3) RoHS
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Infineon 44746
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AUD 0.2841
Multiples of: 5

   P - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
IPAN65R650CEXKSA1


MOSFET
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Infineon 44620
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AUD 0.8132
Multiples of: 500

 650 V        TO - 220FP - 3TubeSi     Coolmos
SQJ500AEP-T1_BE3


MOSFET N and P CH 40V D-S
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Vishay 44573
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AUD 1.0587
Multiples of: 1

30 A40 V9.2 mOhms , 27 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 175 C48 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi2 Channel- 20 V , 20 V25.5 nC , 30.2 nCEnhancement TrenchFET
SPD08P06P G


TO-252-3 MOSFETs ROHS
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Infineon 44491
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AUD 0.4494
Multiples of: 1

8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252ReelSi1 Channel20 V- 13 nCEnhancementAec - Q101Sipmos
AO3407


MOSFET SOT23 RoHS
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TWGMC 42980
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AUD 0.0343
Multiples of: 10

                   
BSS84P H6327


MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon 41283
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between Mon. 13 Jul to Thu. 16 Jul Calender.png

AUD 0.0611
Multiples of: 10

170 mA60 V5.8 OhmsP - Channel 2 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel20 V1.5 nCEnhancement  
DMN31D5UFZ-7B


Diodes Incorporated MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W
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Diodes Incorporated 39689
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AUD 0.1681
Multiples of: 1

220 mA30 V4.5 OhmsN - Channel 1 V- 55 C+ 150 C393 mWSmd/SmtX2 - DFN0606 - 3ReelSi1 Channel12 V0.35 nCEnhancement Dmn31
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