MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF3205PBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 62A,10V TO-220 (TO-220-3) RoHS
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Infineon 48403
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AUD 0.4791
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            Hexfet®      
BSS306NH6327XTSA1


Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3
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Infineon 47326
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AUD 0.1116
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2.3 A30 V57 mOhmsN - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V1.5 nCEnhancementAec - Q101 
DMN3042L-13


MOSFET 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF
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Diodes Incorporated 47137
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AUD 0.1367
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5.8 A30 V21 mOhmsN - Channel 600 mV- 55 C+ 150 C720 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 12 V20 nCEnhancement  
PJE8406_R1_00001


MOSFET /E06/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI02/PJ///
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Panjit 47025
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AUD 0.154
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           Cut Tape       
IAUCN04S7L019ATMA1


MOSFETs N
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Infineon 46710
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AUD 0.6286
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144 A40 V1.92 mOhmsN - Channel 1.5 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V29 nCEnhancement  
FDMS3600S


MOSFET 25V Dual N-Channel PowerTrench MOSFET
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ON Semiconductor 46307
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AUD 1.8268
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15 A , 30 A25 V5.6 mOhms , 1.6 mOhmsn - channel 1.8 v , 1.5 V- 55 C+ 150 C2.2 w , 2.5 Wsmd/smtPOWER 56Reelsi2 channel20 V19 nC  power stage
BSC018NE2LSI


Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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Infineon 46257
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AUD 0.7071
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100 A25 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8-Si1 Channel20 V48 nCEnhancement Optimos
2N7002BKS


SOT-363 MOSFETs ROHS
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TECH PUBLIC 46230
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AUD 0.043
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NTD20P06LT4G


MOSFET -60V -15.5A P-Channel
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ON Semiconductor 46075
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AUD 0.7248
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15.5 A60 V143 mOhmsP - Channel 1 V- 55 C+ 175 C65 WSmd/SmtTO - 252 - 4Cut TapeSi1 Channel5 V15 nCEnhancement  
NCE6003X


SOT-23 MOSFETs ROHS
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NCE Power 35026
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AUD 0.0571
Multiples of: 10

                   
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