MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002DW H6327


Infineon Technologies MOSFET N-Ch 60V 300mA SOT-363-6
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Infineon 37054
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AUD 0.077
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300 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6-Si2 Channel20 V600 pC , 600 pCEnhancementAec - Q101 
SI3483CDV-T1-BE3


MOSFET P-CHANNEL 30-V (D-S)
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Vishay 36927
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AUD 0.6724
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8 A30 V34 mOhmsP - Channel 1 V- 55 C+ 150 C4.2 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , 20 V11.5 nCEnhancement  
LSI1012N3T5G


20V 500mA 900mV@250uA null SOT-883-3 MOSFETs ROHS
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Leshan 36821
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AUD 0.0218
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MCH3486-TL-H


ON Semiconductor MOSFET NCH 4V DRIVE SERIES
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ON Semiconductor 36763
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AUD 0.2822
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2 A60 V105 mOhmsN - Channel 1.2 V- 55 C+ 150 C1 WSmd/SmtSOT - 323 - 3ReelSi1 Channel20 V7 nCEnhancement  
CEDM7004 TR


Central Semiconductor MOSFET 30V N-Ch Enh FET 8.0Vgs 1.78ID 100mW
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Central Semiconductor 36738
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AUD 0.3221
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1.78 A30 V280 mOhmsN - Channel 1 V- 65 C+ 150 C100 mWSmd/SmtSOT - 883LReelSi1 Channel8 V792 pCEnhancement  
IRF830PbF


MOSFET N Trench 500V 4.5A 4V @ 250uA 1.5 Ω @ 2.7A,10V TO-220 (TO-220-3) RoHS
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Infineon 36675
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AUD 0.6891
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AP3404S


30V 6.5A 20mΩ@10V,6.5A 1.4W 1.6V@250uA N Channel SOT-23-3 MOSFETs ROHS
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Quan Li 36394
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AUD 0.0619
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SSM3K324R,LF


Toshiba MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
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Toshiba 36345
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AUD 0.053
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4 A30 V109 mOhmsN - Channel 0.4 v to 1 V + 150 C2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V2.2 nCEnhancement  
SI2300A


MOSFET N Trench 20V 6A 1V @ 50uA 25 mΩ @ 6A,4.5V SOT-23 RoHS
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Youtai 32010
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AUD 0.0164
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2N7002T


60V 115mA 3Ω@10V 2.5V null SOT-523 MOSFETs ROHS
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HXY MOS 22620
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AUD 0.0197
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