MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3404LQ-7


MOSFET MOSFET BVDSS: 25V~30V SOT23 T&R 3K
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Diodes Incorporated 98940
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AUD 0.6369
Multiples of: 3000

           -       
APM4953


MOSFET 2 P Channel (Dual) 30V 4.9A 3V @ 250uA 55 mΩ @ 5.1A,10V SOP-8_150mil RoHS
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Hottech 69131
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AUD 0.0781
Multiples of: 5

                   
IRFR120NTRPBF


MOSFET N Trench 100V 9.4A 4V @ 250uA 210 mΩ @ 5.6A,10V TO-252-2 (DPAK) RoHS
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Infineon 38800
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AUD 0.2327
Multiples of: 5

   N - Channel  - 55 C+ 175 C Smd/SmtDPAKReel       
NDF10N60ZH


N-Channel 600 V 10A (Tc) 39W (Tc) Through Hole TO-220-2 Full Pack
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ON Semiconductor 38278
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AUD 0.9221
Multiples of: 1

10 A600 V650 mOhmsn - channel  - 55 C+ 150 C39 Wthrough holeTO - 220 - 3Tubesi1 channel30 V47 nC   
SSM3J35CT,L3F


MOSFET Small-signal MOSFET ID=-0.1A VDSS=-20V
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Toshiba 38050
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AUD 0.0808
Multiples of: 1

100 mA20 V4.3 OhmsP - Channel 1 V + 150 C100 mWSmd/SmtSOT - 883 - 3Cut TapeSi1 Channel10 V Enhancement  
NTD5867NLT4G


MOSFET NFET DPAK 60V 18A 43 MOHM
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ON Semiconductor 37927
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AUD 6.864
Multiples of: 1

20 A60 V39 mOhmsn - channel 1.5 V- 55 C+ 150 C36 Wsmd/smtTO - 252 - 4Cut Tapesi1 channel10 V15 nCenhancement  
WNM2021


SOT-323 MOSFETs ROHS
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TECH PUBLIC 37286
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AUD 0.048
Multiples of: 10

                   
Hot IRFR5305TRPBF


MOSFET P Trench 55V 31A 4V @ 250uA 65 mΩ @ 16A,10V TO-252-2 (DPAK) RoHS
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Infineon 27240
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AUD 0.3643
Multiples of: 1

31 A55 V65 mOhmsP - Channel 4 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V42 nCEnhancement  
2N7002L


Fairchild Semiconductor MOSFET
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ON Semiconductor 26190
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AUD 0.0443
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel20 V1.81 V- 55 C+ 150 C200 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
STFW3N150


Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
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STMicroelectronics 13657
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AUD 1.5392
Multiples of: 1

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