MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQD40031EL_GE3


MOSFET -30V Vds 20V Vgs DPAK (TO-252)
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Vishay 40574
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AUD 1.0838
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100 A30 V3.2 mOhmsP - Channel 1. 5 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V186 nCEnhancement  
SIA445EDJ-T1-GE3


MOSFET -20V 16.5mOhm@4.5V 12A P-Ch G-III
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Vishay 40487
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AUD 0.3527
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12 A20 V16.5 mOhmsp - channel 1.2 V- 55 C+ 150 C19 Wsmd/smtPOWERPAK SC - 70 - 6L S in GLEReelsi1 channel12 V48 nCenhancement trenchfet, powerpak
SQ3426AEEV-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay 40158
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AUD 0.4144
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7 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V11.5 nCEnhancement TrenchFET
SI2302A


MOSFET N Trench 20V 2.8A 1.9V @ 250uA 115 mΩ @ 3.1A,2.5V SOT-23 RoHS
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Youtai 40125
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AUD 0.0147
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SI1922EDH-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 1.3A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6
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Vishay 40123
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AUD 0.202
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          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®       
BSS139 H6906


Infineon Technologies MOSFET
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Infineon 40071
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AUD 0.5202
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100 mA250 V7.8 Ohmsn - channel 2.1 V- 55 C+ 150 C360 mWsmd/smtSOT - 23 - 3Reelsi1 channel20 V3.5 nCdepletion  
PJA3415_R1_00001


MOSFET P Trench 20V 4A 1.2V @ 250uA 95 mΩ @ 2.1A,1.8V SOT-23 RoHS
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Panjit 40029
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AUD 0.1
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DMP6350SQ-7


MOSFET MOSFET BVDSS: 41V 60V SOT23 T&R 3K
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Diodes Incorporated 39994
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AUD 0.2549
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           Cut Tape       
NCV8406ASTT3G


ON Semiconductor MOSFET 65V SMARTFET
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ON Semiconductor 39971
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AUD 0.8852
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3.8 A70 V210 mOhmsN - Channel    1.31 WSmd/SmtSOT - 223 - 3ReelSi1 Channel   Aec - Q101 
IRLR3110ZTRLPBF


Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK T/R
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Infineon 39769
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AUD 1.3475
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           Tape And Reel    Enhancement  
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