MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SJ281-TL-E


Trans MOSFET P-CH Si 250V 3A 3-Pin(2+Tab) TP-FA
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ON Semiconductor 40969
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AUD 0.4877
Multiples of: 1

                enhancement  
BSC093N04LS G


MOSFET OptiMOS 3 PWR TRANST 40V 49A
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Infineon 40912
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AUD 0.3087
Multiples of: 1

49 A40 V7.8 mOhmsN - Channel 1.2 V- 55 C+ 150 C35 WSmd/SmtTDSONReelSi1 Channel20 V24 nCEnhancement Optimos
SI2310


60V 3A 1.5W 78mΩ@10V,3A 2V@250uA 19.5pF@30V N Channel 247pF@30V 6nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 40867
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AUD 0.0349
Multiples of: 10

                   
BSS123-TP


MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W
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Micro Commercial Components (MCC) 40740
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AUD 0.0293
Multiples of: 3000

0.17 A100 V6 OhmsN - Channel 1 V- 55 C+ 150 C0.35 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V1.4 nCEnhancement  
SI2328DS-T1-E3


MOSFET 100V Vds 20V Vgs SOT-23
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Vishay 40740
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AUD 0.2817
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
SI2325DS-T1-E3


MOSFET 150V 0.69A 0.75W
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Vishay 40740
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AUD 0.4384
Multiples of: 3000

690 mA150 V1.2 OhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtTO - 236 - 3ReelSi1 Channel- 10 V12 nCEnhancement Trenchfet
STP120N4F6


STMicroelectronics MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI
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STMicroelectronics 40740
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AUD 1.1914
Multiples of: 1000

80 A40 V4.3 mOhmsN - Channel 4 V- 55 C+ 175 C110 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V65 nCEnhancementAec - Q101Stripfet
BSS83PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
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Infineon 20370
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AUD 0.0765
Multiples of: 3000

            Sipmos      
2N7002KW


MOSFET NCHAN Enhance MOSFET
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ON Semiconductor 6882
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AUD 0.0891
Multiples of: 5

310 mA60 V3 OhmsN - Channel    300 mWSmd/SmtSOT - 323ReelSi1 Channel  Enhancement  
DMN33D8LT-13


MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
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Diodes Incorporated 4204
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AUD 0.0405
Multiples of: 5

   N - Channel     Smd/SmtSOT - 523 - 3Cut TapeSi2 Channel     
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First...7172737475...

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