MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJA3432_R1_00001


MOSFET /A32/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-20TMN/NF20T-QI13/PJ///
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Panjit 40639
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AUD 0.0865
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           Cut Tape       
PJA3411_R1_00001


MOSFET P Trench 20V 3.1A 1.2V @ 250uA 190 mΩ @ 1.1A,1.8V SOT-23 RoHS
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Panjit 40611
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AUD 0.1365
Multiples of: 1

                   
AP3003


30V 1.2W 19mΩ@10V,4.2A 1.3V@250uA 1PCSN-Channel&1PCSP-Channel SOT-23-6 MOSFETs ROHS
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Quan Li 40584
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AUD 0.126
Multiples of: 5

                   
SQD40031EL_GE3


MOSFET -30V Vds 20V Vgs DPAK (TO-252)
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Vishay 40574
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AUD 1.0838
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100 A30 V3.2 mOhmsP - Channel 1. 5 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V186 nCEnhancement  
SQ3426AEEV-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay 40158
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AUD 0.4144
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7 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V11.5 nCEnhancement TrenchFET
SI2302A


MOSFET N Trench 20V 2.8A 1.9V @ 250uA 115 mΩ @ 3.1A,2.5V SOT-23 RoHS
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Youtai 40125
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AUD 0.0147
Multiples of: 50

                   
SI1922EDH-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 1.3A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6
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Vishay 40123
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AUD 0.202
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          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®       
BSS139 H6906


Infineon Technologies MOSFET
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Infineon 40071
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AUD 0.5202
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100 mA250 V7.8 Ohmsn - channel 2.1 V- 55 C+ 150 C360 mWsmd/smtSOT - 23 - 3Reelsi1 channel20 V3.5 nCdepletion  
BSS84


MOSFET P Trench 50V 130mA 2V @ 1mA 10 Ω @ 100mA,5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 36181
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AUD 0.0183
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BSS138


50V 220mA 3.5Ω@10V,220mA 225mW 1.6V@1mA null SOT-23 MOSFETs ROHS
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Yongyutai Electronics 2134
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AUD 0.0054
Multiples of: 50

                   
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First...7172737475...

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