MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CMKDM8005 TR


MOSFET DUAL P-CHANNEL MOSFET
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Central Semiconductor 37769
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AUD 0.2981
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   P - Channel     Smd/SmtSOT - 363Cut TapeSi2 Channel     
SI3437DV-T1-BE3


MOSFET P-CHANNEL 150-V (D-S)
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Vishay 37713
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AUD 0.7327
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1.4 A150 V750 mOhmsP - Channel 4 V- 55 C+ 150 C3.2 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V8 nCEnhancement  
TQM138KCX RFG


MOSFETs 60V, 0.36A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 37229
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AUD 0.0644
Multiples of: 1

360 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C400 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.8 nCEnhancementAEC - Q101 
IRFR3707ZTRPBF


MOSFET N Trench 30V 56A (Tc) 2.25V @ 25uA 9.5 mΩ @ 15A,10V TO-252-2 (DPAK) RoHS
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Infineon 37160
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AUD 0.6433
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56 A30 V9.5 mOhmsN - Channel 2.35 V- 55 C+ 175 C50 WSmd/SmtDPAKReelSi1 Channel20 V9.6 nCEnhancement  
2N7002P,215


MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET
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Nexperia 34648
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AUD 0.0367
Multiples of: 10

   N - Channel  - 55 C150 C Smdsmt Reel       
2N7002K


MOSFET N Trench 60V 300mA 2.5V @ 250uA 5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Hottech 19739
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AUD 0.0143
Multiples of: 50

                   
IPB072N15N3 G


MOSFET OptiMOS 3 PWR TRANST 150V 100A
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Infineon 19400
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AUD 1.165
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100 A150 V7.2 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263ReelSi1 Channel10 V70 nCEnhancement Optimos
BSS84


Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23
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ON Semiconductor 514
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AUD 0.0632
Multiples of: 10

   P Channel               
STL45N65M5


STMicroelectronics MOSFET N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh
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STMicroelectronics 0
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AUD 4.7188
Multiples of: 3000

22.5 A650 V75 mOhmsN - Channel 4 V- 55 C+ 150 C160 WSmd/SmtPowerflat - 4ReelSi1 Channel25 V82 nCEnhancement Mdmesh
FDMS86300DC


MOSFET 80V N-Ch Dual Cool PowerTrench MOSFET
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ON Semiconductor 0
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AUD 2.0677
Multiples of: 3000

24 A80 V4 mOhmsn - channel 3.4 V- 55 C+ 150 C125 Wsmd/smtPOWER - 56Reelsi2 channel20 V72 nCenhancement powertrench
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First...7172737475...

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