MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Si2347DS-T1-GE3


Vishay Semiconductors MOSFET -30V .042Ohm10V 5A P-Ch G-III
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Vishay 38169
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AUD 0.2148
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- 3.9 A- 30 V68 mOhmsP - Channel - 1 v to - 2.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V6.9 nCEnhancement Trenchfet
FDN5618P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 38145
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AUD 0.0881
Multiples of: 5

                   
SSM3J35CT,L3F


MOSFET Small-signal MOSFET ID=-0.1A VDSS=-20V
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Toshiba 38050
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AUD 0.0808
Multiples of: 1

100 mA20 V4.3 OhmsP - Channel 1 V + 150 C100 mWSmd/SmtSOT - 883 - 3Cut TapeSi1 Channel10 V Enhancement  
NTD5867NLT4G


MOSFET NFET DPAK 60V 18A 43 MOHM
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ON Semiconductor 37927
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AUD 6.7711
Multiples of: 1

20 A60 V39 mOhmsn - channel 1.5 V- 55 C+ 150 C36 Wsmd/smtTO - 252 - 4Cut Tapesi1 channel10 V15 nCenhancement  
NDC7002N


MOSFET SO-6 N-CH ENHANCE
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ON Semiconductor 37830
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AUD 0.2571
Multiples of: 3000

   Dual N Channel      SSOT - 6Reel       
FDMC86262P


MOSFET PT5 150V/25V Pch PowerTrench Mosfet
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ON Semiconductor 37830
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AUD 0.9071
Multiples of: 3000

- 2 A- 150 V541 mOhmsP - Channel - 4 V- 55 C+ 150 C40 WSmd/SmtMLP - 8ReelSi1 Channel+/- 25 V9.1 nCEnhancement Powertrench
SPB20N60C3ATMA1


MOSFET HIGH POWER_LEGACY
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Infineon 37830
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AUD 2.7595
Multiples of: 1000

           Reel      Coolmos
IRLTS6342TRPBF


Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
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Infineon 34967
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AUD 0.1744
Multiples of: 1

8.3 A30 V17.5 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtTSOP - 6ReelSi1 Channel     
DMN2056U-7


MOSFET MOSFET N-CHANNEL 20V 4A SOT23-3
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Diodes Incorporated 11302
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AUD 0.258
Multiples of: 1

         Smd/SmtSOT - 23 - 3Cut TapeSi      
RYM002N05T2CL


MOSFET .9V DRIVE N-Ch MOSFET
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ROHM 8012
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AUD 0.0602
Multiples of: 10

200 mA50 V2.2 OhmsN - Channel8 V0.8 V- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel4.5 V Enhancement  
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