MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002


60V 115mA 225mW 2Ω@10V,100mA N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 43553
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AUD 0.0075
Multiples of: 50

                   
FQP13N06L


Transistor: N-MOSFET; unipolar; 60V; 9.6A; 45W; TO220AB
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ON Semiconductor 35348
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AUD 0.7836
Multiples of: 1

            Qfet®      
IRFR3707ZTRPBF


MOSFET N Trench 30V 56A (Tc) 2.25V @ 25uA 9.5 mΩ @ 15A,10V TO-252-2 (DPAK) RoHS
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Infineon 35308
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AUD 0.4795
Multiples of: 1

56 A30 V9.5 mOhmsN - Channel 2.35 V- 55 C+ 175 C50 WSmd/SmtDPAKReelSi1 Channel20 V9.6 nCEnhancement  
DMT3006LFDF-7


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 35089
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AUD 0.2437
Multiples of: 1

         Smd/SmtU - DFN2020 - F - 6Cut TapeSi      
SUD08P06-155L-BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 35041
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AUD 0.8154
Multiples of: 1

           Cut Tape       
SQ3418AEEV-T1_BE3


MOSFET N-CHANNEL 40V D-S
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Vishay 35017
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AUD 0.6097
Multiples of: 1

8 A40 V26 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V12.4 nCEnhancement TrenchFET
BSS138BKW,115


N-Channel 60 V 320mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323
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Nexperia 35004
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AUD 0.0673
Multiples of: 1

   N - Channel     Smd/SmtSOT - 323Reel       
2N7002K-TP


Micro Commercial Components (MCC) MOSFET 350mW, 60V, 340mA
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Micro Commercial Components (MCC) 34920
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AUD 0.0184
Multiples of: 3000

340 mA60 V5.3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V30 nC   
DMN65D8L-7


MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA
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Diodes Incorporated 34920
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AUD 0.0287
Multiples of: 3000

310 mA60 V3 OhmsN - Channel 1.2 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.87 nCEnhancement  
2N7002W


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 34920
Ships to you
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AUD 0.0896
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel20 V Enhancement  
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First...8182838485...

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