MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDS332P


MOSFET SOT-23 P-CH LOGIC
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ON Semiconductor 34920
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AUD 0.1976
Multiples of: 3000

- 1 A- 20 V350 mOhmsP - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSSOT - 3Cut TapeSi1 Channel8 V Enhancement  
DMG4800LFG-7


MOSFET ENHANCE MODE MOSFET 30V/4.82 - 7.44A
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Diodes Incorporated 34892
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AUD 0.2619
Multiples of: 1

7.44 A30 V11 mOhmsN - Channel 800 mV- 55 C+ 150 C940 mWSmd/SmtDFN3030 - 8ReelSi1 Channel25 V9.47 nCEnhancement  
DMG1012T


20V 800mA 180mΩ@4.5V,550mA 280mW 750mV@250uA 15pF@16V N Channel 120pF@16V +150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 34656
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AUD 0.0324
Multiples of: 10

                   
SIR882BDP-T1-RE3


N-Channel 100V 16.5A (Ta), 67.5A (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 34635
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AUD 1.0533
Multiples of: 1

67.5 A100 V6.9 mOhmsN - Channel 2.3 V- 55 C+ 150 C83.3 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V54 nCEnhancement TrenchFET
SI2300


20V 6A 22m@10V,6.0A 350mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 34595
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AUD 0.0197
Multiples of: 10

                   
IRFR110TRPBF-BE3


MOSFET 100V N-CH
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Vishay 34547
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AUD 0.6533
Multiples of: 1

4.3 A100 V540 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V8.3 nCEnhancement  
NDT2955


SOT-223 MOSFETs ROHS
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JSMSEMI 34498
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AUD 0.249
Multiples of: 5

                   
BSO615NGXUMA1


MOSFET TRENCH 40<-<100V
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Infineon 34434
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AUD 0.7333
Multiples of: 1

           Cut Tape       
NDS0605


MOSFET P-Channel FET Enhancement Mode
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ON Semiconductor 25743
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AUD 0.0688
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180 mA60 V5 OhmsP - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
RSF014N03TL


MOSFET N-CH 30V 1.4A TUMT3
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ROHM 2860
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AUD 0.3073
Multiples of: 1

1.4 A30 V270 mOhmsN - Channel    800 mWSmd/SmtTUMT - 3ReelSi1 Channel20 V Enhancement  
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First...8182838485...

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