MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002AQ-7


60V 180mA 5O@10V,115mA 370mW N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 33844
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AUD 0.0525
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180 mA60 V6 OhmsN - Channel 1.2 V- 55 C+ 150 C370 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V EnhancementAec - Q101 
IRF7341GTRPBF


Mosfet Array 2 N-Channel (Dual) 55V 5.1A 2.4W Surface Mount 8-SO
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Infineon 33714
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AUD 1.2921
Multiples of: 1

5.1 A , 5.1 A55 v , 55 V65 mOhms , 65 mOhmsN - Channel 1 v , 1 V- 55 C+ 175 C2.4 WSmd/SmtSO - 8ReelSi2 Channel+/- 20 v , +/- 20 V29 nC , 29 nCEnhancement  
DMG2301LK-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 33553
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AUD 0.1231
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2.4 A20 V160 mOhmsP - Channel 300 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V3.4 nCEnhancement  
SQ4917EY-T1_BE3


MOSFET Dual P-CHANNEL 60 V
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Vishay 33523
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AUD 1.3654
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           Cut Tape       
IPD25N06S4L30ATMA2


60V 25A 29W 30mO@25A,10V N Channel TO-252-3-11 MOSFETs ROHS
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Infineon 33492
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AUD 0.4696
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   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
HL2301A


20V 2.3A 700mW 112m@4.5V,2.3A 1V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 33295
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AUD 0.0291
Multiples of: 20

                   
BSP129H6906XTSA1


Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
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Infineon 33290
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AUD 0.6881
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            Sipmos      
CMUDM8005 TR


MOSFET SMD- Small Signal P-Channel Mosfet
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Central Semiconductor 33282
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AUD 0.5404
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650 mA20 V250 mOhmsP - Channel 1 V- 65 C+ 150 C300 mWSmd/SmtSOT - 523ReelSi1 Channel8 V1.2 nCEnhancement Ultramini
BSS209PW H6327


Infineon Technologies MOSFET P-Ch -20V -630mA SOT-323-3
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Infineon 33235
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AUD 0.069
Multiples of: 1

630 mA20 V550 mOhmsP - Channel 600 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4.5 V- 1.0 nCEnhancement  
IRLML2502TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 26607
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AUD 0.0671
Multiples of: 10

                   
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First...8182838485...

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