MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS127 H6327


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 30371
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AUD 0.1152
Multiples of: 1

21 mA600 V500 OhmsN - Channel 1.4 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT23 - 3ReelSi1 Channel10 V0.65 nCDepletion  
PMDXB600UNEZ


NXP Semiconductors MOSFET 20 V, dual N-channel Trench MOSFET
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Nexperia 30324
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AUD 0.0716
Multiples of: 1

600 mA , 600 mA20 v , 20 V3 Ohms , 3 OhmsN - Channel 450 mV , 450 mV- 55 C+ 150 C380 mWSmd/SmtDFN1010B - 6ReelSi2 Channel+/- 8 v , +/- 8 V0.4 nCEnhancement  
PJC7400_R1_00001


MOSFET /C00/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-30TAMN/NF30TA-QI02/PJ///
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Panjit 30227
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AUD 0.1083
Multiples of: 1

           Cut Tape       
SI1013R


SOT-523 MOSFETs ROHS
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TECH PUBLIC 30220
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AUD 0.0613
Multiples of: 10

                   
CPC3703CTR


Trans MOSFET N-CH Si 250V Automotive 4-Pin(3+Tab) SOT-89 T/R
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IXYS 30128
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AUD 0.55
Multiples of: 1

360 mA250 V4 OhmsN - Channel  - 55 C+ 125 C1.6 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel15 V Depletion Clare
SI2304DDS-T1-GE3


N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 30074
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AUD 0.0694
Multiples of: 5

3.6 A30 V60 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.7 nCEnhancement Trenchfet
STB57N65M5


Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
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STMicroelectronics 30070
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AUD 9.9226
Multiples of: 1000

            supermesh      
SI2305CDS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 30032
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AUD 0.1041
Multiples of: 5

                   
FDMS86201


MOSFET 120V N-Channel PowerTrench MOSFET
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ON Semiconductor 29881
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AUD 2.0254
Multiples of: 1

65 A120 V9.6 mOhmsN - Channel 4 V- 55 C+ 150 C104 WSmd/SmtPOWER - 56ReelSi1 Channel20 V32 nC  Powertrench
SI2300


MOSFET SOT23 RoHS
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TWGMC 29840
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AUD 0.0347
Multiples of: 20

                   
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