MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AOD4184A


MOSFET N Trench 40V 13A 2.6V @ 250uA 7 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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Alpha & Omega 51283
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AUD 0.3016
Multiples of: 5

                   
BSS123NH6433XTMA1


N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23
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Infineon 48500
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AUD 0.0612
Multiples of: 10000

190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23ReelSi1 Channel20 V900 pCEnhancement  
KSI2305CDS-T1-GE3


20V 4A 65Ω@4.5V,3.2A 1.1W P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 31117
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AUD 0.0345
Multiples of: 20

                   
BSS223PWH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
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Infineon 31050
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AUD 0.0604
Multiples of: 1

            Optimos P      
NTUD3170NZT5G


MOSFET 20V Trench N-Channel
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ON Semiconductor 31040
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AUD 0.1534
Multiples of: 1

220 mA20 V1.5 OhmsN - Channel 400 mV- 55 C+ 150 C125 mW (1/8 w)Smd/SmtSOT - 963ReelSi2 Channel4.5 V Enhancement  
SQ3419EV-T1_BE3


MOSFET P-CHANNEL 40V D-S
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Vishay 30940
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AUD 0.4731
Multiples of: 1

6.9 A40 V48 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V7.5 nCEnhancement TrenchFET
FDV301N-ES


20V 1.25A 220m@4.5V,900mA 1.1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 30652
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AUD 0.0202
Multiples of: 20

                   
TPNTK3139PT1G


20V 850mA 530mO@4.5V,550mA 690mW P Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC 30438
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AUD 0.0326
Multiples of: 20

                   
LP3407LT1G


MOSFET P Trench 30V 4.1A 3V @ 250uA 70 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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Leshan 30060
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AUD 0.0365
Multiples of: 10

                   
NX1029X,115


MOSFET 60/50V, 330/170 mA N/P-ch Trench MOSFET
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Nexperia 1012
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AUD 0.1053
Multiples of: 1

300 mA , 170 mA60 v , 50 V1.6 Ohms , 7.5 OhmsN And P - Channel 1.1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 666ReelSi2 Channel10 v , - 10 V0.25 nC , 0.5 nCEnhancement  
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